摘要:
A method for producing a polymer for semiconductor optoelectronics, comprising the steps of providing a monomer is produced having the formula (I), wherein: R1 is a hydrolysable group, R2 is hydrogen, and R3 is a bridging linear or branched bivalent hydrocarbyl group, said monomer being produced by hydrosilylation of the corresponding starting materials, and homo- or copolymerizing the monomer to produce a polymer.
摘要:
A thin film comprising a composition obtained by polymerizing a monomer having the formula (I), wherein R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.
摘要:
A thin film comprising a composition obtained by polymerizing a monomer having the formula I: wherein: R1 is a hydrolysable group, R2 is an organic crosslinking group, a reactive cleaving group or a polarizability reducing organic group, and R3 is a bridging linear or branched bivalent hydrocarbyl group to form a siloxane material. The organo-functionalized molecule is capable of further reacting in the matrix so as to undergo cross-linking, cleaving or combination of both. The present invention provides excellent chemical resistance and very low chemical adsorption behavior due to high cross-linking bridging group density.