公开(公告)号：EP1787319A1

公开(公告)日：2007-05-23

申请号：EP05777305.3

申请日：2005-08-31

申请人： Silecs OY

发明人： RANTALA, Juha, T. ,  PAULASAARI, Jyri ,  KYLMÄ, Janne ,  TÖRMÄNEN, Turo, T. ,  PIETIKÄINEN, Jarkko ,  HACKER, Nigel ,  HADZIC, Admir

IPC分类号： H01L21/312 ,  H01B3/46 ,  C08G77/60

CPC分类号： C09D183/14 ,  C08G77/50 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76822 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

摘要： A thin film comprising a composition obtained by polymerizing a monomer having the formula (I), wherein R1 is a hydrolysable group, R2 is a polarizability reducing organic group, and R3 is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.