专利检索 ap:("Silicon Storage Technology Inc.") AND inv:"DECOBERT, Catherine" 第 1 页

1.

发明公开
METHOD OF FORMING SPLIT GATE MEMORY CELLS WITH THINNED SIDE EDGE TUNNEL OXIDE 审中-公开

公开(公告)号：EP4169071A1

公开(公告)日：2023-04-26

申请号：EP20842650.2

申请日：2020-12-21

申请人： Silicon Storage Technology Inc.

发明人： KIM, Jinho , CUEVAS, Elizabeth , TKACHEV, Yuri , GHAZAVI, Parviz , BERTELLO, Bernard , FESTES, Gilles , VILLARD, Bruno , DECOBERT, Catherine , DO, Nhan , THIERY, Jean Francois

IPC分类号： H01L27/11536 , H01L27/11539 , H01L27/11519 , H01L27/11546 , H01L29/423 , H01L21/28

2.

发明公开
FINFET-BASED SPLIT GATE NON-VOLATILE FLASH MEMORY WITH EXTENDED SOURCE LINE FINFET, AND METHOD OF FABRICATION 审中-公开

公开(公告)号：EP3891802A1

公开(公告)日：2021-10-13

申请号：EP19759479.9

申请日：2019-08-13

申请人： Silicon Storage Technology, Inc.

发明人： JOURBA, Serguei , DECOBERT, Catherine , ZHOU, Feng , KIM, Jinho , LIU, Xian , DO, Nhan

IPC分类号： H01L27/11524 , H01L29/66

3.

发明公开
METHOD OF FORMING SPLIT GATE MEMORY CELLS WITH THINNED TUNNEL OXIDE 审中-公开

公开(公告)号：EP4101003A1

公开(公告)日：2022-12-14

申请号：EP20757794.1

申请日：2020-08-04

申请人： Silicon Storage Technology Inc.

发明人： KIM, Jinho , CUEVAS, Elizabeth , GHAZAVI, Parviz , BERTELLO, Bernard , FESTES, Gilles , DECOBERT, Catherine , TKACHEV, Yuri , VILLARD, Bruno , DO, Nhan

IPC分类号： H01L27/11536 , H01L21/28 , H01L29/423

4.

发明公开
SPLIT GATE NON-VOLATILE MEMORY CELLS AND LOGIC DEVICES WITH FINFET STRUCTURE, AND METHOD OF MAKING SAME 审中-公开

公开(公告)号：EP3782195A1

公开(公告)日：2021-02-24

申请号：EP19788376.2

申请日：2019-01-31

申请人： Silicon Storage Technology, Inc.

发明人： ZHOU, Feng , KIM, Jinho , LIU, Xian , JOURBA, Serguei , DECOBERT, Catherine , DO, Nhan

IPC分类号： H01L29/788

5.

发明公开
METHOD OF DETERMINING DEFECTIVE DIE CONTAINING NON-VOLATILE MEMORY CELLS 审中-实审

公开(公告)号：EP4409576A1

公开(公告)日：2024-08-07

申请号：EP22703192.9

申请日：2022-01-18

申请人： Silicon Storage Technology Inc.

发明人： TKACHEV, Yuri , KIM, Jinho , FUNG, Cynthia , FESTES, Gilles , BERTELLO, Bernard , GHAZAVI, Parviz , VILLARD, Bruno , THIERY, Jean Francois , DECOBERT, Catherine , JOURBA, Serguei , LUO, Fan , TEE, Latt , DO, Nhan

IPC分类号： G11C29/44 , G11C29/50 , G11C29/04 , G11C29/06

CPC分类号： G11C29/06 , G11C2029/500220130101 , G11C2029/500620130101 , G11C29/50004 , G11C2029/040320130101 , G11C2029/040520130101 , G11C29/44 , G11C29/50016

6.

发明公开
METHOD OF FORMING A DEVICE WITH FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS AND FINFET LOGIC DEVICES 审中-公开

公开(公告)号：EP4111500A1

公开(公告)日：2023-01-04

申请号：EP20772479.0

申请日：2020-08-31

申请人： Silicon Storage Technology Inc.

发明人： ZHOU, Feng , LIU, Xian , KIM, Jinho , JOURBA, Serguei , DECOBERT, Catherine , DO, Nhan

IPC分类号： H01L27/11536 , H01L27/088 , H01L21/28 , H01L29/423 , H01L29/66

7.

发明公开
SPLIT GATE NON-VOLATILE MEMORY CELLS WITH FINFET STRUCTURE AND HKMG MEMORY AND LOGIC GATES, AND METHOD OF MAKING SAME 审中-公开

公开(公告)号：EP3891804A1

公开(公告)日：2021-10-13

申请号：EP19759478.1

申请日：2019-08-13

申请人： Silicon Storage Technology, Inc.

发明人： ZHOU, Feng , KIM, Jinho , LIU, Xian , JOURBA, Serguei , DECOBERT, Catherine , DO, Nhan

IPC分类号： H01L27/11529 , H01L27/11531 , H01L27/11546 , H01L29/423

8.

发明公开
MEMORY CELL WITH FLOATING GATE, COUPLING GATE AND ERASE GATE, AND METHOD OF MAKING SAME 审中-公开

公开(公告)号：EP3891803A1

公开(公告)日：2021-10-13

申请号：EP19759480.7

申请日：2019-08-13

申请人： Silicon Storage Technology, Inc.

发明人： DECOBERT, Catherine , TRAN, Hieu, Van , DO, Nhan

IPC分类号： H01L27/11524 , H01L27/11521 , H01L27/11546

9.

发明公开
SPLIT GATE NON-VOLATILE MEMORY CELLS WITH THREE DIMENSIONAL FINFET STRUCTURE, AND METHOD OF MAKING SAME 审中-公开

公开(公告)号：EP3818564A1

公开(公告)日：2021-05-12

申请号：EP19732824.8

申请日：2019-06-04

申请人： Silicon Storage Technology, Inc.

发明人： JOURBA, Serguei , DECOBERT, Catherine , ZHOU, Feng , KIM, Jinho , LIU, Xian , DO, Nhan

IPC分类号： H01L27/11524 , H01L29/66 , H01L29/78 , H01L29/788

10.

发明公开
TWO TRANSISTOR FINFET-BASED SPLIT GATE NON-VOLATILE FLOATING GATE FLASH MEMORY AND METHOD OF FABRICATION 审中-公开

公开(公告)号：EP3769338A2

公开(公告)日：2021-01-27

申请号：EP19772251.5

申请日：2019-01-23

申请人： Silicon Storage Technology, Inc.

发明人： JOURBA, Serguei , DECOBERT, Catherine , FENG, Zhou , KIM, Jinho , LIU, Xian , DO, Nhan

IPC分类号： H01L27/11524 , H01L29/423 , H01L29/78 , H01L29/788 , H01L21/28 , H01L21/66