公开(公告)号：EP3828935A1

公开(公告)日：2021-06-02

申请号：EP19841222.3

申请日：2019-07-23

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho ,  TOGASHI, Hideaki ,  SHIGETOSHI, Takushi ,  YAMAMOTO, Junpei

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369

摘要： A solid-state image sensor (100) is provided that includes a semiconductor substrate (500), a charge accumulator disposed in the semiconductor substrate (500) and configured to accumulate charge, a photoelectric converter (200) provided above the semiconductor substrate (500) and configured to convert light to charge, and a through electrode (600) passing through the semiconductor substrate (500) and electrically connecting the charge accumulator with the photoelectric converter (200). At an end portion on the photoelectric converter side of the through electrode (600), a cross-sectional area of a conductor (602) positioned at the center of the through electrode (600) in a cut section orthogonal to a through direction of the through electrode (600) gradually increases toward the photoelectric converter along the through direction.

公开(公告)号：EP3920224A1

公开(公告)日：2021-12-08

申请号：EP20748993.1

申请日：2020-01-21

申请人： Sony Group Corporation ,  Sony Semiconductor Solutions Corporation

发明人： SHIGETOSHI, Takushi ,  TOGASHI, Hideaki ,  YAMAMOTO, Junpei ,  FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369 ,  H04N5/374

摘要： A solid-state imaging element (1) according to the present disclosure includes one or more photoelectric conversion layers (2), a penetrating electrode (50), and a connection pad (52). The one or more photoelectric conversion layers (2) are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate (10). The penetrating electrode (50) is provided in a pixel area, connected at one end to the photoelectric conversion layer (2) to penetrate through front and back surfaces of the semiconductor substrate (10), and transfers an electric charge photoelectrically converted by the photoelectric conversion layer (2), to a different principal surface side of the semiconductor substrate (10). The connection pad (52) is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate (10), and to which a different end of the penetrating electrode (50) is connected.