公开(公告)号：EP3828935A1

公开(公告)日：2021-06-02

申请号：EP19841222.3

申请日：2019-07-23

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho ,  TOGASHI, Hideaki ,  SHIGETOSHI, Takushi ,  YAMAMOTO, Junpei

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369

摘要： A solid-state image sensor (100) is provided that includes a semiconductor substrate (500), a charge accumulator disposed in the semiconductor substrate (500) and configured to accumulate charge, a photoelectric converter (200) provided above the semiconductor substrate (500) and configured to convert light to charge, and a through electrode (600) passing through the semiconductor substrate (500) and electrically connecting the charge accumulator with the photoelectric converter (200). At an end portion on the photoelectric converter side of the through electrode (600), a cross-sectional area of a conductor (602) positioned at the center of the through electrode (600) in a cut section orthogonal to a through direction of the through electrode (600) gradually increases toward the photoelectric converter along the through direction.

公开(公告)号：EP3809466A1

公开(公告)日：2021-04-21

申请号：EP19819237.9

申请日：2019-06-11

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： TOGASHI, Hideaki ,  YAGI, Iwao ,  JOEI, Masahiro ,  KOGA, Fumihiko ,  MURATA, Kenichi ,  HIRATA, Shintarou ,  SAITO, Yosuke ,  FURUKAWA, Akira

IPC分类号： H01L27/146 ,  H01L27/30 ,  H04N5/369

摘要： There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor (10) including a stacked structure that includes a semiconductor substrate (500), a first photoelectric converter (PD 200) provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter (PD 100) provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode (102, 202), a photoelectric conversion film (104, 204), and a readout electrode (108, 208) are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.

公开(公告)号：EP3799122A1

公开(公告)日：2021-03-31

申请号：EP19807172.2

申请日：2019-04-19

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： JOEI, Masahiro ,  MURATA, Kenichi ,  KOGA, Fumihiko ,  YAGI, Iwao ,  HIRATA, Shintarou ,  TOGASHI, Hideaki ,  SAITO, Yosuke

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L27/30 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H04N5/374

摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided.
There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided so as to be stacked with the first photoelectric conversion unit and including a plurality of pixel transistors for controlling the first photoelectric conversion unit, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor is made of an oxide semiconductor layer.

公开(公告)号：EP3828934A1

公开(公告)日：2021-06-02

申请号：EP19840408.9

申请日：2019-07-25

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： MURATA, Kenichi ,  JOEI, Masahiro ,  KOGA, Fumihiko ,  YAGI, Iwao ,  HIRATA, Shintarou ,  TOGASHI, Hideaki ,  SAITO, Yosuke ,  TAKAHASHI, Shingo

IPC分类号： H01L27/146 ,  H01L27/30 ,  H04N5/335

摘要： Provided is a solid-state image capturing element including a semiconductor substrate (300) and first and second photoelectric conversion parts (500, 600) configured to convert light into electric charge. The first and the second photoelectric conversion parts (500 and 600) each have a laminated structure including an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film (510, 610). The lower electrode (508, 608) of each of the first and the second photoelectric conversion parts (500, 600) is electrically connected with a common electric charge accumulation part (314) through a common penetration electrode (460) provided in common to the first and the second photoelectric conversion parts (500, 600) and penetrating through the semiconductor substrate (300), the common electric charge accumulation part (314) being provided in common to the first and the second photoelectric conversion parts (500, 600) in the semiconductor substrate (300).

公开(公告)号：EP3920224A1

公开(公告)日：2021-12-08

申请号：EP20748993.1

申请日：2020-01-21

申请人： Sony Group Corporation ,  Sony Semiconductor Solutions Corporation

发明人： SHIGETOSHI, Takushi ,  TOGASHI, Hideaki ,  YAMAMOTO, Junpei ,  FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369 ,  H04N5/374

摘要： A solid-state imaging element (1) according to the present disclosure includes one or more photoelectric conversion layers (2), a penetrating electrode (50), and a connection pad (52). The one or more photoelectric conversion layers (2) are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate (10). The penetrating electrode (50) is provided in a pixel area, connected at one end to the photoelectric conversion layer (2) to penetrate through front and back surfaces of the semiconductor substrate (10), and transfers an electric charge photoelectrically converted by the photoelectric conversion layer (2), to a different principal surface side of the semiconductor substrate (10). The connection pad (52) is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate (10), and to which a different end of the penetrating electrode (50) is connected.

公开(公告)号：EP4027196A1

公开(公告)日：2022-07-13

申请号：EP20860035.3

申请日：2020-09-03

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： MURAKAWA, Yusuke ,  TOGASHI, Hideaki ,  NAGASHIMA, Yoshito ,  FURUKAWA, Akira ,  ANDO, Yoshihiro ,  AKUTAGAWA, Yasumasa ,  MINODA, Taku ,  IWASHITA, Hiroki ,  NIWA, Takahito ,  NISHIDA, Sho ,  ISHIMARU, Mikio

IPC分类号： G03B11/00 ,  G02B7/34 ,  G03B13/36 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369

摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel configured by arranging an on-chip lens in common for a pair of pixels.
The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The pixel includes a photoelectric conversion unit configured to perform photoelectric conversion in accordance with incident light, and a charge transfer unit configured to transfer a charge generated by the photoelectric conversion. The individual on-chip lens is arranged for each pixel and individually collects incident light. The phase difference pixels each include the photoelectric conversion unit and the charge transfer unit, and are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. The charge transfer units of the plurality of phase difference pixels are arranged in a region between the common on-chip lens and the individual on-chip lens.

公开(公告)号：EP3989295A1

公开(公告)日：2022-04-27

申请号：EP20827921.6

申请日：2020-06-17

申请人： Sony Semiconductor Solutions Corporation

发明人： TOGASHI, Hideaki ,  YAMAGUCHI, Tetsuji ,  KAWAI, Nobuhiro ,  SEKIGUCHI, Koji ,  JOEI, Masahiro ,  MURATA, Kenichi ,  HIRATA, Shintarou ,  HASEGAWA, Yuta ,  NAGASHIMA, Yoshito

IPC分类号： H01L31/10

摘要： A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

公开(公告)号：EP4350772A2

公开(公告)日：2024-04-10

申请号：EP24158837.5

申请日：2018-06-08

申请人： Sony Semiconductor Solutions Corporation

发明人： KAWAI, Nobuhiro ,  TOGASHI, Hideaki ,  KOGA, Fumihiko ,  YAMAGUCHI, Tetsuji ,  HIRATA, Shintarou ,  WATANABE, Taiichiro ,  ANDO, Yoshihiro

IPC分类号： H01L27/146

摘要： A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

公开(公告)号：EP4280284A3

公开(公告)日：2024-01-24

申请号：EP23202683.1

申请日：2018-06-21

申请人： Sony Semiconductor Solutions Corporation

发明人： WATANABE, Taiichiro ,  KOGA, Fumihiko ,  ITO, Kyosuke ,  TOGASHI, Hideaki ,  SUGIMORI, Yusaku

IPC分类号： H01L27/146 ,  H01L31/10

摘要： An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13 c of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13 B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

公开(公告)号：EP4280284A2

公开(公告)日：2023-11-22

申请号：EP23202683.1

申请日：2018-06-21

申请人： Sony Semiconductor Solutions Corporation

发明人： WATANABE, Taiichiro ,  KOGA, Fumihiko ,  ITO, Kyosuke ,  TOGASHI, Hideaki ,  SUGIMORI, Yusaku

IPC分类号： H01L27/146

摘要： An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13 c of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13 B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.