公开(公告)号：EP3920224A1

公开(公告)日：2021-12-08

申请号：EP20748993.1

申请日：2020-01-21

申请人： Sony Group Corporation ,  Sony Semiconductor Solutions Corporation

发明人： SHIGETOSHI, Takushi ,  TOGASHI, Hideaki ,  YAMAMOTO, Junpei ,  FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369 ,  H04N5/374

摘要： A solid-state imaging element (1) according to the present disclosure includes one or more photoelectric conversion layers (2), a penetrating electrode (50), and a connection pad (52). The one or more photoelectric conversion layers (2) are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate (10). The penetrating electrode (50) is provided in a pixel area, connected at one end to the photoelectric conversion layer (2) to penetrate through front and back surfaces of the semiconductor substrate (10), and transfers an electric charge photoelectrically converted by the photoelectric conversion layer (2), to a different principal surface side of the semiconductor substrate (10). The connection pad (52) is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate (10), and to which a different end of the penetrating electrode (50) is connected.

公开(公告)号：EP3828935A1

公开(公告)日：2021-06-02

申请号：EP19841222.3

申请日：2019-07-23

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： FUKUOKA, Shinpei ,  TAKEO, Moe ,  NISHIDA, Sho ,  TOGASHI, Hideaki ,  SHIGETOSHI, Takushi ,  YAMAMOTO, Junpei

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H04N5/369

摘要： A solid-state image sensor (100) is provided that includes a semiconductor substrate (500), a charge accumulator disposed in the semiconductor substrate (500) and configured to accumulate charge, a photoelectric converter (200) provided above the semiconductor substrate (500) and configured to convert light to charge, and a through electrode (600) passing through the semiconductor substrate (500) and electrically connecting the charge accumulator with the photoelectric converter (200). At an end portion on the photoelectric converter side of the through electrode (600), a cross-sectional area of a conductor (602) positioned at the center of the through electrode (600) in a cut section orthogonal to a through direction of the through electrode (600) gradually increases toward the photoelectric converter along the through direction.

公开(公告)号：EP4459679A2

公开(公告)日：2024-11-06

申请号：EP24200051.1

申请日：2017-10-18

申请人： Sony Semiconductor Solutions Corporation

发明人： OTAKE, Yusuke ,  MATSUMOTO, Akira ,  YAMAMOTO, Junpei ,  NAITO, Ryusei ,  NAKAMIZO, Masahiko ,  WAKANO, Toshifumi

IPC分类号： H01L27/146

摘要： A sensor, comprising a first substrate (41) including a first semiconductor layer (310) including a first avalanche photodiode (21) including a first cathode region (101) and a first anode region (105); and a first isolation region (108), a first wiring layer (41, 311) including a first wiring; a first via (104), wherein the first cathode region (101) is electrically connected to the first wiring through the first via (104); a second wiring; and a second via (106), wherein the first anode region (105) is electrically connected to the second wiring through the second via (106); and a second substrate (42) stacked on the first substrate, the second substrate including a second wiring layer (42, 610) including a third wiring directly bonded to the first wiring; and a fourth wiring directly bonded to the second wiring; and a second semiconductor layer (610), wherein the first anode region (105) is disposed between the first cathode region (101) and the first isolation region (108).

公开(公告)号：EP4270451A1

公开(公告)日：2023-11-01

申请号：EP21910247.2

申请日：2021-12-06

申请人： Sony Semiconductor Solutions Corporation

发明人： YAMAMOTO, Junpei

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H04N5/369

摘要： Provided is a solid-state imaging device capable of suitably forming a pixel separation section in a pixel separation groove, and a method for manufacturing the solid-state imaging device.
A solid-state imaging device of the present disclosure includes a first substrate, a plurality of photoelectric conversion sections provided in the first substrate, and a pixel separation section provided between the photoelectric conversion sections in the first substrate and provided on a side surface of the first substrate that is a {100} plane.

公开(公告)号：EP3993040A1

公开(公告)日：2022-05-04

申请号：EP20833490.4

申请日：2020-06-26

申请人： Sony Semiconductor Solutions Corporation

发明人： NAKAZAWA, Keiichi ,  ZAITSU, Koichiro ,  FUJII, Nobutoshi ,  HIURA, Yohei ,  MORI, Shigetaka ,  OKAMOTO, Shintaro ,  OHSHIMA, Keiji ,  MANDA, Shuji ,  YAMAMOTO, Junpei ,  YUGA, Yui ,  MIYAKE, Shinichi ,  KAMBE, Tomoki ,  OGATA, Ryo ,  MIYAJI, Tatsuki ,  NAKAGAWA, Shinji ,  YAMASHITA, Hirofumi ,  HAMAMOTO, Yasushi ,  KIMIZUKA, Naohiko

IPC分类号： H01L27/146

摘要： There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

公开(公告)号：EP4131429A1

公开(公告)日：2023-02-08

申请号：EP21774140.4

申请日：2021-03-26

申请人： Sony Semiconductor Solutions Corporation

发明人： MATSUMOTO, Akira ,  ZAITSU, Koichiro ,  NISHIDA, Keiji ,  NISHIDA, Mizuki ,  IZUKASHI, Kazutaka ,  ITO, Daisuke ,  MIYOSHI, Yasufumi ,  YAMAMOTO, Junpei ,  TANAKA, Yusuke ,  HAMAMOTO, Yasushi

IPC分类号： H01L31/10 ,  H01L21/22 ,  H01L21/225 ,  H01L21/265 ,  H01L21/76 ,  H01L27/146 ,  H04N5/369

摘要： An imaging device (1) includes a plurality of imaging elements (100), wherein each of the plurality of imaging elements includes: a plurality of pixels (300a, 300b) containing impurities of a first conductivity type; an element separation wall (310) surrounding the plurality of pixels and provided so as to penetrate a semiconductor substrate (10); an on-chip lens (200) provided above a light receiving surface (10a) of the semiconductor substrate so as to be shared by the plurality of pixels; and a first separation portion (304) provided in a region surrounded by the element separation wall and separating the plurality of pixels, the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate, and a first diffusion region (306) containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate.