公开(公告)号：EP4415376A1

公开(公告)日：2024-08-14

申请号：EP22878426.0

申请日：2022-09-29

申请人： Sony Semiconductor Solutions Corporation

发明人： TSUKUDA, Yasunori ,  SHIMADA, Shohei ,  BAINES, Yannick ,  MATSUNUMA, Takeshi

IPC分类号： H04N25/70 ,  G01J1/42 ,  G01J1/44 ,  G01S7/4861 ,  G01S17/89 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L31/10 ,  H01L31/107 ,  H01L31/12

CPC分类号： G01J1/44 ,  G01J1/42 ,  G01S7/4861 ,  G01S17/89 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L31/10 ,  H01L31/107 ,  H01L31/12 ,  H04N25/70

摘要： [Object]
A bias voltage of a photoelectric conversion element is accurately adjustable regardless of a quantity of incident light.
[Solving Means]
An optical detection device includes a first pixel that has a photoelectric conversion element for generating a carrier by photoelectric conversion, a second pixel that has a carrier generation unit for generating a carrier by a cause other than photoelectric conversion, and a control circuit that controls a bias voltage applied to each of the photoelectric conversion element and the carrier generation unit, according to the carrier generated by the second pixel. The photoelectric conversion element includes a first photoelectric conversion region in which photoelectric conversion is possible and a first pinning film disposed at a position in contact with the first photoelectric conversion region. The carrier generation unit includes a second photoelectric conversion region in which photoelectric conversion is possible, and includes a second pinning film that is partially removed, at a position in contact with the second photoelectric conversion region, or no member that reduces dark current, in an entire area of the second photoelectric conversion region.