公开(公告)号：EP4276905A1

公开(公告)日：2023-11-15

申请号：EP21917687.2

申请日：2021-12-22

申请人： Sony Semiconductor Solutions Corporation

发明人： SHIMADA, Shohei ,  HIYAMA, Hiroki

IPC分类号： H01L27/146 ,  H04N5/3745

摘要： The present disclosure relates to a light receiving element and a ranging system capable of reducing a pixel size in a stack-type light receiving element using an avalanche photodiode.
The light receiving element includes: a first substrate on which an avalanche photodiode that converts received light into an electric signal and at least one element are formed, the element being included in a read circuit which outputs a pixel signal on the basis of the electric signal; and a second substrate on which a logic circuit is formed, the logic circuit being a circuit that processes the pixel signal which is read from the avalanche photodiode, and the first substrate and the second substrate being stacked. The technique of the present disclosure can be applied to, for example, a light receiving element, a ranging system, or the like that detects a distance to a subject.

公开(公告)号：EP4415376A1

公开(公告)日：2024-08-14

申请号：EP22878426.0

申请日：2022-09-29

申请人： Sony Semiconductor Solutions Corporation

发明人： TSUKUDA, Yasunori ,  SHIMADA, Shohei ,  BAINES, Yannick ,  MATSUNUMA, Takeshi

IPC分类号： H04N25/70 ,  G01J1/42 ,  G01J1/44 ,  G01S7/4861 ,  G01S17/89 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L31/10 ,  H01L31/107 ,  H01L31/12

CPC分类号： G01J1/44 ,  G01J1/42 ,  G01S7/4861 ,  G01S17/89 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L31/10 ,  H01L31/107 ,  H01L31/12 ,  H04N25/70

摘要： [Object]
A bias voltage of a photoelectric conversion element is accurately adjustable regardless of a quantity of incident light.
[Solving Means]
An optical detection device includes a first pixel that has a photoelectric conversion element for generating a carrier by photoelectric conversion, a second pixel that has a carrier generation unit for generating a carrier by a cause other than photoelectric conversion, and a control circuit that controls a bias voltage applied to each of the photoelectric conversion element and the carrier generation unit, according to the carrier generated by the second pixel. The photoelectric conversion element includes a first photoelectric conversion region in which photoelectric conversion is possible and a first pinning film disposed at a position in contact with the first photoelectric conversion region. The carrier generation unit includes a second photoelectric conversion region in which photoelectric conversion is possible, and includes a second pinning film that is partially removed, at a position in contact with the second photoelectric conversion region, or no member that reduces dark current, in an entire area of the second photoelectric conversion region.

公开(公告)号：EP4447115A1

公开(公告)日：2024-10-16

申请号：EP22903954.0

申请日：2022-11-09

申请人： Sony Semiconductor Solutions Corporation

发明人： SHIMADA, Shohei ,  SEKINE, Ryotaro ,  MURASE, Takuro ,  OTAKE, Yusuke ,  WAKANO, Toshifumi

IPC分类号： H01L27/146 ,  H04N25/76 ,  H04N25/778

摘要： The present technology provides a photodetection device in which an increase in capacitance of charge accumulation regions is prevented. The photodetection device includes: a first semiconductor layer; a first wiring layer; a second wiring layer; and a second semiconductor layer, the first semiconductor layer including: a cell region in which a photoelectric conversion element is formed; a charge storage region; and a transfer transistor, the first wiring layer including a first wiring line group and a second wiring line group stacked on the first wiring line group via an insulating film, the first wiring line group being the wiring line group located closest to the first semiconductor layer, the first wiring line group including a first pad, a reference potential line, and a gate control line that are provided at intervals in a horizontal direction, the second wiring line group including a second pad electrically connected to the first pad, the first wiring layer including: a first via having one end connected to the charge accumulation region and the other end connected to the first pad; a second via having one end connected to the cell region and the other end connected to the reference potential line; and a third via having one end connected to the gate electrode of the transfer transistor and the other end connected to the gate control line.

公开(公告)号：EP4123708A1

公开(公告)日：2023-01-25

申请号：EP20925905.0

申请日：2020-12-15

申请人： Sony Semiconductor Solutions Corporation

发明人： TSUKUDA, Yasunori ,  ITO, Kyosuke ,  SHIMADA, Shohei

IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/3745 ,  G01S7/4863 ,  G01S17/10

摘要： In a solid-state imaging element that measures a distance on the basis of a light receiving timing of reflected light, the shortest distance that can be measured is shortened. A photoelectric conversion region generates charges through photoelectric conversion. A multiplication region multiplies the generated charges. An output electrode outputs the multiplied charges. A detection circuit detects the presence or absence of photons contained in reflected light with respect to radiation light on the basis of the charges output from the output electrode. An additional electrode discharges the charges from the photoelectric conversion region in a case where a predetermined potential is applied to the additional electrode. A control circuit applies the predetermined potential to the additional electrode at a radiation timing when the radiation light is radiated.