公开(公告)号：EP3329315A1

公开(公告)日：2018-06-06

申请号：EP16751020.5

申请日：2016-07-19

申请人： Sony Semiconductor Solutions Corporation

发明人： YAMAMOTO, Atsushi ,  TAKEUCHI, Koichi ,  KUROBE, Toshihiro ,  MATSUGAI, Hiroyasu ,  ITOU, Hiroyuki ,  SAITO, Suguru ,  OHSHIMA, Keiji ,  FUJII, Nobutoshi ,  TAZAWA, Hiroshi ,  SHIRAIWA, Toshiaki ,  ISHIDA, Minoru

IPC分类号： G02B13/00 ,  B29D11/00 ,  G02B3/00 ,  H01L27/146 ,  G02B27/32

CPC分类号： G02B3/0075 ,  B29C43/04 ,  B29C43/18 ,  B29D11/00307 ,  B29D11/00375 ,  G02B3/0062 ,  G02B3/0068 ,  G02B13/0085 ,  G02B27/32 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14687

摘要： Substrates with lenses having lenses disposed therein are aligned with high accuracy. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are direct-bonded and stacked based on an alignment mark. The alignment mark is formed simultaneously with the through-hole. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：EP4383333A1

公开(公告)日：2024-06-12

申请号：EP22852943.4

申请日：2022-07-28

申请人： Sony Semiconductor Solutions Corporation

发明人： NOUDO, Shinichiro ,  NATORI, Taichi ,  MATSUGAI, Hiroyasu ,  YAMAMOTO, Atsushi ,  OINOUE, Takashi ,  KUROGI, Kana ,  FUKUSHIMA, Kohei ,  TAKEUCHI, Koichi ,  YOKOCHI, Kaito ,  IWASE, Toshihito

IPC分类号： H01L27/146 ,  G02B1/11 ,  G02B5/00 ,  G02B5/30 ,  H01L31/0232 ,  H01L31/10

CPC分类号： G02B1/11 ,  G02B5/00 ,  G02B5/30 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/10

摘要： Collapses of pillars are suppressed. An optical detecting device includes a pixel array section having multiple pixels that are arranged two-dimensionally therein. Further, each pixel of the multiple pixels includes a photoelectric converting section provided on a semiconductor layer and a metasurface structure that is arranged on a light incidence surface side of the semiconductor layer and that guides incident light to the photoelectric converting section. Moreover, the metasurface structure includes multiple pillars that are arranged at distances therebetween which are shorter than a wavelength of the incident light and a transparent support that connects and supports at least some of the multiple pillars.

公开(公告)号：EP4383332A1

公开(公告)日：2024-06-12

申请号：EP22852832.9

申请日：2022-07-19

申请人： Sony Semiconductor Solutions Corporation

发明人： NOUDO, Shinichiro ,  IWASE, Toshihito ,  YOKOCHI, Kaito ,  SUZUKI, Masayuki ,  TODA, Atsushi ,  EBIKO, Yoshiki ,  YAMAMOTO, Atsushi ,  NATORI, Taichi ,  TAKEUCHI, Koichi

IPC分类号： H01L27/146 ,  H04N25/70 ,  G02B5/18

CPC分类号： G02B5/18 ,  H01L27/146

摘要： A photodetector that makes it possible to attempt to improve optical characteristics in terms of oblique incidence of light at angle-of-view ends is provided. A photodetector includes multiple pixels arranged in a matrix on a semiconductor substrate. Each of the multiple pixels includes a photoelectric converting section that photo-electrically converts incident light, and a deflecting section that is arranged on a light-incidence-surface side of the photoelectric converting section, and has multiple pillars with different thicknesses, pitches, or shapes in the pixel. The pillars guide an incident principal ray that is incident at a different angle for each image height to the photoelectric converting section at a prism angle at which light is bent relative to the principal ray differently for each pixel.