公开(公告)号：EP4266377A1

公开(公告)日：2023-10-25

申请号：EP21906630.5

申请日：2021-12-14

申请人： Sony Semiconductor Solutions Corporation

发明人： MURATA, Kenichi ,  JOEI, Masahiro ,  HIRATA, Shintarou ,  TAKAHASHI, Shingo ,  OHBA, Yoshiyuki ,  KOJIMA, Takashi ,  YUKAWA, Tomiyuki ,  ZAIZEN, Yoshifumi ,  SUGIYAMA, Tomohiro ,  OKAMOTO, Masaki ,  MASUNAGA, Takuya ,  KAWAHARA, Yuki

IPC分类号： H01L31/0232 ,  H01L31/10 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/144 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369 ,  G02B5/22

摘要： A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a semiconductor substrate; a first photoelectric converter that is provided on the semiconductor substrate, and detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that is provided at a position overlapping the first photoelectric converter in a thickness direction of the semiconductor substrate in the semiconductor substrate, and detects light in a second wavelength range and photoelectrically converts the light; an optical filter that is sandwiched between the first photoelectric converter and the second photoelectric converter in the thickness direction, and through which the light in the second wavelength range passes more easily than the light in the first wavelength range; and a first light-shielding member that surrounds the optical filter along a plane orthogonal to the thickness direction to at least partially overlap the optical filter in a plane direction along the plane, and shields at least the light in the second wavelength range.

公开(公告)号：EP4276892A3

公开(公告)日：2024-02-21

申请号：EP23199714.9

申请日：2018-04-16

申请人： Sony Semiconductor Solutions Corporation

发明人： SAITO, Suguru ,  FUJII, Nobutoshi ,  MATSUMOTO, Ryosuke ,  ZAIZEN, Yoshifumi ,  MANDA, Shuji ,  MARUYAMA, Shunsuke ,  SHIMIZU, Hideo

IPC分类号： H01L27/146

摘要： A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

公开(公告)号：EP3745458A1

公开(公告)日：2020-12-02

申请号：EP18902105.8

申请日：2018-12-12

申请人： Sony Semiconductor Solutions Corporation

发明人： ZAIZEN, Yoshifumi ,  MARUYAMA, Shunsuke

IPC分类号： H01L27/146 ,  G02B5/22 ,  H04N5/33 ,  H04N5/369

摘要： An imaging unit includes a photoelectric conversion layer including a compound semiconductor and having a light incident surface, and a light shielding portion provided in an optical path of light incident on the light incident surface and shielding light having a wavelength of less than 450 nm.

公开(公告)号：EP4276892A2

公开(公告)日：2023-11-15

申请号：EP23199714.9

申请日：2018-04-16

申请人： Sony Semiconductor Solutions Corporation

发明人： SAITO, Suguru ,  FUJII, Nobutoshi ,  MATSUMOTO, Ryosuke ,  ZAIZEN, Yoshifumi ,  MANDA, Shuji ,  MARUYAMA, Shunsuke ,  SHIMIZU, Hideo

IPC分类号： H01L21/74

摘要： A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.