公开(公告)号：EP4266377A1

公开(公告)日：2023-10-25

申请号：EP21906630.5

申请日：2021-12-14

申请人： Sony Semiconductor Solutions Corporation

发明人： MURATA, Kenichi ,  JOEI, Masahiro ,  HIRATA, Shintarou ,  TAKAHASHI, Shingo ,  OHBA, Yoshiyuki ,  KOJIMA, Takashi ,  YUKAWA, Tomiyuki ,  ZAIZEN, Yoshifumi ,  SUGIYAMA, Tomohiro ,  OKAMOTO, Masaki ,  MASUNAGA, Takuya ,  KAWAHARA, Yuki

IPC分类号： H01L31/0232 ,  H01L31/10 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/144 ,  H01L27/146 ,  H01L27/30 ,  H04N5/369 ,  G02B5/22

摘要： A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a semiconductor substrate; a first photoelectric converter that is provided on the semiconductor substrate, and detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that is provided at a position overlapping the first photoelectric converter in a thickness direction of the semiconductor substrate in the semiconductor substrate, and detects light in a second wavelength range and photoelectrically converts the light; an optical filter that is sandwiched between the first photoelectric converter and the second photoelectric converter in the thickness direction, and through which the light in the second wavelength range passes more easily than the light in the first wavelength range; and a first light-shielding member that surrounds the optical filter along a plane orthogonal to the thickness direction to at least partially overlap the optical filter in a plane direction along the plane, and shields at least the light in the second wavelength range.

公开(公告)号：EP4131386A1

公开(公告)日：2023-02-08

申请号：EP21778942.9

申请日：2021-03-24

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： JOEI, Masahiro ,  HIRATA, Shintarou ,  YUKAWA, Tomiyuki ,  SUZUKI, Ryosuke ,  NAKANO, Hiroshi ,  HAYASHI, Toshihiko ,  TAKAGUCHI, Ryotaro ,  YAGI, Iwao ,  MURATA, Kenichi

IPC分类号： H01L27/18

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.