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公开(公告)号：EP3809466A1
公开(公告)日：2021-04-21
申请号：EP19819237.9
申请日：2019-06-11
发明人： TOGASHI, Hideaki , YAGI, Iwao , JOEI, Masahiro , KOGA, Fumihiko , MURATA, Kenichi , HIRATA, Shintarou , SAITO, Yosuke , FURUKAWA, Akira
IPC分类号： H01L27/146 , H01L27/30 , H04N5/369
摘要： There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor (10) including a stacked structure that includes a semiconductor substrate (500), a first photoelectric converter (PD 200) provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter (PD 100) provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode (102, 202), a photoelectric conversion film (104, 204), and a readout electrode (108, 208) are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.
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2.发明公开
公开(公告)号：EP3989295A1
公开(公告)日：2022-04-27
申请号：EP20827921.6
申请日：2020-06-17
发明人： TOGASHI, Hideaki , YAMAGUCHI, Tetsuji , KAWAI, Nobuhiro , SEKIGUCHI, Koji , JOEI, Masahiro , MURATA, Kenichi , HIRATA, Shintarou , HASEGAWA, Yuta , NAGASHIMA, Yoshito
IPC分类号： H01L31/10
摘要： A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.
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公开(公告)号：EP3799122A1
公开(公告)日：2021-03-31
申请号：EP19807172.2
申请日：2019-04-19
发明人： JOEI, Masahiro , MURATA, Kenichi , KOGA, Fumihiko , YAGI, Iwao , HIRATA, Shintarou , TOGASHI, Hideaki , SAITO, Yosuke
IPC分类号： H01L27/146 , H01L21/3205 , H01L21/768 , H01L21/8234 , H01L23/522 , H01L27/088 , H01L27/30 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H04N5/374
摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided.
There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided so as to be stacked with the first photoelectric conversion unit and including a plurality of pixel transistors for controlling the first photoelectric conversion unit, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor is made of an oxide semiconductor layer.-
公开(公告)号：EP3832725A1
公开(公告)日：2021-06-09
申请号：EP19843344.3
申请日：2019-07-19
IPC分类号： H01L27/146 , H01L27/30 , H01L31/10 , H04N5/369
摘要： An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and a first hydrogen-blocking layer that covers above the organic photoelectric conversion layer, a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer.
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5.发明公开
公开(公告)号：EP3828934A1
公开(公告)日：2021-06-02
申请号：EP19840408.9
申请日：2019-07-25
发明人： MURATA, Kenichi , JOEI, Masahiro , KOGA, Fumihiko , YAGI, Iwao , HIRATA, Shintarou , TOGASHI, Hideaki , SAITO, Yosuke , TAKAHASHI, Shingo
IPC分类号： H01L27/146 , H01L27/30 , H04N5/335
摘要： Provided is a solid-state image capturing element including a semiconductor substrate (300) and first and second photoelectric conversion parts (500, 600) configured to convert light into electric charge. The first and the second photoelectric conversion parts (500 and 600) each have a laminated structure including an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film (510, 610). The lower electrode (508, 608) of each of the first and the second photoelectric conversion parts (500, 600) is electrically connected with a common electric charge accumulation part (314) through a common penetration electrode (460) provided in common to the first and the second photoelectric conversion parts (500, 600) and penetrating through the semiconductor substrate (300), the common electric charge accumulation part (314) being provided in common to the first and the second photoelectric conversion parts (500, 600) in the semiconductor substrate (300).
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公开(公告)号：EP4425558A1
公开(公告)日：2024-09-04
申请号：EP22886454.2
申请日：2022-09-02
IPC分类号： H01L27/146
CPC分类号： Y02E10/549 , H01L27/146
摘要： A solid-state imaging device includes: a pixel section that includes a transparent semiconductor formed in an effective pixel region of an insulator, an organic photoelectric conversion film formed on the transparent semiconductor on a side opposite to the insulator, and a transparent electrode formed on the organic photoelectric conversion film on a side opposite to the transparent semiconductor; a coupling section disposed in the insulator in a peripheral region around the effective pixel region, the coupling section being coupled to a circuit that supplies electricity to the transparent electrode; and a wiring line that electrically couples the transparent electrode and the coupling section to each other, and is formed by a transparent electrode material.
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7.发明公开
公开(公告)号：EP4266377A1
公开(公告)日：2023-10-25
申请号：EP21906630.5
申请日：2021-12-14
发明人： MURATA, Kenichi , JOEI, Masahiro , HIRATA, Shintarou , TAKAHASHI, Shingo , OHBA, Yoshiyuki , KOJIMA, Takashi , YUKAWA, Tomiyuki , ZAIZEN, Yoshifumi , SUGIYAMA, Tomohiro , OKAMOTO, Masaki , MASUNAGA, Takuya , KAWAHARA, Yuki
IPC分类号： H01L31/0232 , H01L31/10 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/144 , H01L27/146 , H01L27/30 , H04N5/369 , G02B5/22
摘要： A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a semiconductor substrate; a first photoelectric converter that is provided on the semiconductor substrate, and detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that is provided at a position overlapping the first photoelectric converter in a thickness direction of the semiconductor substrate in the semiconductor substrate, and detects light in a second wavelength range and photoelectrically converts the light; an optical filter that is sandwiched between the first photoelectric converter and the second photoelectric converter in the thickness direction, and through which the light in the second wavelength range passes more easily than the light in the first wavelength range; and a first light-shielding member that surrounds the optical filter along a plane orthogonal to the thickness direction to at least partially overlap the optical filter in a plane direction along the plane, and shields at least the light in the second wavelength range.
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公开(公告)号：EP4131386A1
公开(公告)日：2023-02-08
申请号：EP21778942.9
申请日：2021-03-24
发明人： JOEI, Masahiro , HIRATA, Shintarou , YUKAWA, Tomiyuki , SUZUKI, Ryosuke , NAKANO, Hiroshi , HAYASHI, Toshihiko , TAKAGUCHI, Ryotaro , YAGI, Iwao , MURATA, Kenichi
IPC分类号： H01L27/18
摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.
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