公开(公告)号：EP0686093A1

公开(公告)日：1995-12-13

申请号：EP94908723.0

申请日：1994-02-04

申请人： Southwall Technologies, Inc.

发明人： GIBBONS, Kevin, P. ,  LAU, Louis, C. ,  WOODARD, Floyd, E.

IPC分类号： B32B15 ,  C23C14 ,  C23C28 ,  H05K1 ,  H05K3

CPC分类号： C23C14/205 ,  C23C14/024 ,  H05K1/0313 ,  H05K3/388 ,  Y10S428/913 ,  Y10T428/12569 ,  Y10T428/1259 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/12993 ,  Y10T428/31681 ,  Y10T428/31786

摘要： The adhesion to plastic substrates (112) of thick layers of functional metals (116) having an oxide heat of formation that is greater than -40,000 calories/gram atom of metal, such as silver, copper, gold, and the like, is improved if a thin layer of a metal having an oxide heat of formation of less than -50,000 calories/gram atom of metal is present as an adhesion-promoting primer layer metal has a melting point greater than 1100 °C, it should be present as the metal or as a substoichiometric oxide. When the primer layer metal (114) has a melting point less than 1100 °C, it may be present as the metal, as a substoichiometric oxide, or as a full stoichiometric oxide. Processes for preparing these materials using sputter-depositing and reflectors incorporating these materials are also disclosed.

公开(公告)号：EP0686093B1

公开(公告)日：2000-08-09

申请号：EP94908723.3

申请日：1994-02-04

申请人： Southwall Technologies, Inc.

发明人： GIBBONS, Kevin, P. ,  LAU, Louis, C. ,  WOODARD, Floyd, E.

IPC分类号： B32B31/00 ,  B32B33/00

CPC分类号： C23C14/205 ,  C23C14/024 ,  H05K1/0313 ,  H05K3/388 ,  Y10S428/913 ,  Y10T428/12569 ,  Y10T428/1259 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/12993 ,  Y10T428/31681 ,  Y10T428/31786

摘要： The adhesion to plastic substrates (112) of thick layers of functional metals (116) having an oxide heat of formation that is greater than -40,000 calories/gram atom of metal, such as silver, copper, gold, and the like, is improved if a thin layer of a metal having an oxide heat of formation of less than -50,000 calories/gram atom of metal is present as an adhesion-promoting primer layer metal has a melting point greater than 1100 DEG C, it should be present as the metal or as a substoichiometric oxide. When the primer layer metal (114) has a melting point less than 1100 DEG C, it may be present as the metal, as a substoichiometric oxide, or as a full stoichiometric oxide. Processes for preparing these materials using sputter-depositing and reflectors incorporating these materials are also disclosed.