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1.发明公开Nitride-based semiconductor light emitting device 审中-公开Lichtemittierende Halbleitervorrichtung auf Nitridbasis
公开(公告)号：EP2276079A2
公开(公告)日：2011-01-19
申请号：EP10169585.6
申请日：2010-07-15
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the CaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译： 目的在于提供能够防止在接触层和电极之间的界面形成肖特基势垒的氮化物系半导体发光元件。 提供LD1作为氮化物系半导体发光器件，其设置有GaN衬底3，设置在GaN衬底3的主表面S1上并包括发光层11的六边形GaN基半导体区域5和p - 电极21，其设置在CaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着从垂直于...的平面以预定倾斜角度R倾斜的参考平面S5延伸 GaN衬底3的c轴方向和倾斜角度¸在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。
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公开(公告)号：EP2287981B1
公开(公告)日：2013-01-23
申请号：EP10169584.9
申请日：2010-07-15
发明人： Sumitomo, Takamichi , Enya, Yohei , Yoshizumi, Yusuke , Ueno, Masaki , Akita, Katsushi , Kyono, Takashi
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202 , H01S2302/00
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3.发明公开
公开(公告)号：EP2287981A1
公开(公告)日：2011-02-23
申请号：EP10169584.9
申请日：2010-07-15
发明人： Sumitomo, Takamichi , Enya, Yohei , Yoshizumi, Yusuke , Ueno, Masaki , Akita, Katsushi , Kyono, Takashi
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3202 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light to be confined into a core semiconductor region 19 is a long wavelength. A first optical guide layer 27 is provided with a two-layer structure ,and a second optical guide layer 31 is provided with a two-layer structure. A material of a cladding layer 21 comprised of at least either of AlGaN and InAlGaN is different from the III-nitride semiconductor, and the thickness D15 of a first epitaxial semiconductor region 15 is larger than the thickness D 19 of the core semiconductor region 19; however, the misfit dislocation densities at first to third interfaces J1, J2 and J3 are not more than 1×10 6 cm -1 , thereby preventing lattice relaxation from occurring in the semiconductor layers at these interfaces J1, J2 and J3 because of the c-plane that acts as a slip plane.
摘要翻译： 本发明提供一种利用半极性平面能够发射不小于500nm的光的III族氮化物半导体激光二极管。 由于设置有源层29以产生波长不小于500nm的光，所以要限制在芯半导体区19中的光的波长是长波长。 第一光导层27设置有两层结构，第二导光层31设置有两层结构。 由AlGaN和InAlGaN中的至少一个构成的包层21的材料与III族氮化物半导体不同，第一外延半导体区域15的厚度D15大于芯半导体区域19的厚度D 19; 然而，第一至第三界面J1，J2和J3处的失配位错密度不大于1×10 6 cm -1，从而防止在这些界面J1，J2和J3处的半导体层中发生晶格弛豫，因为c 飞机作为滑移平面。
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4.发明公开Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer 审中-公开外延氮化镓和制造方法的外延晶片
公开(公告)号：EP2169732A3
公开(公告)日：2010-11-03
申请号：EP09171215.8
申请日：2009-09-24
发明人： Yoshizumi, Yusuke , Ueno, Masaki , Nakamura, Takao
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points (n: integer) on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.
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5.发明公开Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer 审中-公开氮化镓基外延晶片和制造外延晶片的方法
公开(公告)号：EP2169732A2
公开(公告)日：2010-03-31
申请号：EP09171215.8
申请日：2009-09-24
发明人： Yoshizumi, Yusuke , Ueno, Masaki , Nakamura, Takao
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L33/16
摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points (n: integer) on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.
摘要翻译： 一种氮化物发光元件用氮化镓系外延晶片，其特征在于，具有：氮化镓基板，其具有主面;氮化镓基半导体膜，其设置在氮化镓基板的主面上;以及活性层， 氮化镓基半导体膜，所述有源层具有量子阱结构。 有源层包括氮化镓基半导体的阱层。 氮化镓基半导体含有铟作为III族元素。 主面的法线与氮化镓基板的C轴形成偏离角。 偏离角分布在主表面上，并且偏离角在从一点延伸到另一点的线上通过氮化镓衬底的主表面的中心点单调增加。 一点和另一点位于主表面的边缘上，并且线上n点（n：整数）处限定的阱层的铟含量在从一点到另一点的方向上单调减小。 在n个点处定义的阱层的厚度值在该方向上单调增加。
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6.发明公开Method for Producing Nitride Semiconductor Optical Device and Epitaxial Wafer 审中-公开西班牙语西班牙语西班牙语西班牙语西班牙语Nitrid-Halbleitervorrichtung und Epitaxialwafer
公开(公告)号：EP2161764A2
公开(公告)日：2010-03-10
申请号：EP09167757.5
申请日：2009-08-13
发明人： Enya, Yohei , Ueno, Masaki , Nakamura, Takao , Yoshizumi, Yusuke , Sumitomo, Takamichi , Kyono, Takashi , Akita, Katsushi
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/06 , H01L33/16 , H01S2304/04
摘要： In step S106, an In X Ga 1-X N well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature Tw. In step S107, immediately after completion of the growth of the well layer, the growth of a protective layer covering the main surface of the well layer is initiated at temperature Tw. The protective layer is composed of a gallium nitride-based semiconductor with a band gap energy that is higher than that of the well layer and equal to or less than that of a barrier layer. In step S108, the temperature in the furnace is changed from temperatures Tw to T B before the barrier layer growth. The barrier layer composed of the gallium nitride-based semiconductor is grown on the protective layer between times t8 and t9 while the temperature in the furnace is maintained at temperature T B .
摘要翻译： 在步骤S106中，在时刻t4〜t5的半极性主面上生长In X Ga 1-X N阱层，而生长炉内的温度维持在温度Tw。 在步骤S107中，在阱层生长完成之后，在温度Tw下开始覆盖阱层主表面的保护层的生长。 保护层由氮化镓系半导体构成，带隙能量高于阱层的带隙能量，并且等于或小于势垒层的带隙能量。 在步骤S108中，在阻挡层生长之前，炉内的温度从温度Tw变化到T B。 由氮化镓系半导体构成的阻挡层在时刻t8〜t9的保护层上生长，同时炉内的温度保持在温度T B。
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公开(公告)号：EP2276079A3
公开(公告)日：2011-07-06
申请号：EP10169585.6
申请日：2010-07-15
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the CaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
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公开(公告)号：EP2214197B1
公开(公告)日：2011-06-22
申请号：EP10151354.7
申请日：2010-01-22
IPC分类号： H01L21/18 , H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075
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公开(公告)号：EP1928012A3
公开(公告)日：2010-12-08
申请号：EP07023189.9
申请日：2007-11-29
IPC分类号： H01L21/205 , H01L21/20 , H01L21/02 , C30B29/40
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： Affords a semiconductor device manufacturing method, whereby semiconductor devices having superior characteristics are manufactured with high yield.
The semiconductor device manufacturing methods includes: a step of preparing a GaN substrate (10) having a ratio S t / S, of collective area ( S t cm 2 ) of the inversion domains (10 t ) to total area ( S cm 2 ) of the principal face 10 m of the GaN substrate (10), of no more than 0.5, with the density along the (0001) Ga face, being the principal face (10 m ) of the GaN substrate (10), of inversion domains (10 t ) whose surface area where the polarity in the [0001] direction is inverted with respect to the matrix 10 s is 1 µm 2 or more being D cm -2 ; and a step of growing on the principal face (10 m ) of the GaN substrate (10) an at least single-lamina semiconductor layer (20) to form a semiconductor devices (40) in which the product S c × D of the area S c of the principal faces (40 m ) of the semiconductor devices (40) and the density D of the inversion domains (10 t ) is made less than 2.3-
10.发明公开Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer 审中-公开基于氮化镓的制造光学半导体器件的光学半导体器件的氮化镓基外延方法晶片和
公开(公告)号：EP2226858A2
公开(公告)日：2010-09-08
申请号：EP10155194.3
申请日：2010-03-02
发明人： Enya, Yohei , Yoshizumi, Yusuke , Osada, Hideki , Ishibashi, Keiji , Akita, Katsushi , Ueno, Masaki
CPC分类号： H01L33/18 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle A OFF is 0.05 degree or more to less than 15 degrees. The angle A OFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane S M and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis A N of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
摘要翻译： A-氮化镓类半导体光元件设置包括铟的含镓氮化物系半导体层上做的确显示较低的压电效应和良好的结晶质量。 所述基于氮化镓的半导体光元件11a包括GaN支撑基体13，由GaN基半导体区域15，和阱层19，主面13a从表面正交倾斜规定的基准轴的确从一个晶体在一个方向上延伸 m轴和GaN的朝向另一个晶轴的a轴的轴。 倾斜角度A OFF是小于15度0:05度以上。 角度A OFF等于由一个矢量VM和VN矢量所成的角度。 所述主面的倾斜是由一个典型的m面S M和m轴矢量VM所示。 基于GaN的半导体区域15设置在主面13a。 在有源层17的阱层19的方法，无论是m面和从正常轴的主面13a的A N阱层19倾斜的一个平面内。 阱层19的铟含量为0.1以上。
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