公开(公告)号：EP2816618A1

公开(公告)日：2014-12-24

申请号：EP13748733.6

申请日：2013-02-05

申请人： Sony Corporation ,  Sumitomo Electric Industries, Ltd.

发明人： TASAI Kunihiko ,  NAKAJIMA Hiroshi ,  FUTAGAWA Noriyuki ,  YANASHIMA Katsunori ,  ENYA Yohei ,  KUMANO Tetsuya ,  KYONO Takashi

IPC分类号： H01L33/32 ,  H01S5/343

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333

摘要： A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In x1 Al y1 Ga 1-x1-y1 N, where x1>0 and yl>0, the second cladding layer being made of In x2 Al y2 Ga 1-x2-y2 N, where 0≤x2≤about 0.02 and about 0.03≤y2≤about 0.07.

摘要翻译： 一种半导体器件包括：由六方晶系III族氮化物半导体制成并具有半极性面的半导体衬底; 以及形成在所述半导体基板的所述半极性面上的外延层，所述外延层包括第一导电类型的第一包层，第二导电类型的第二包层以及形成在所述第一包层和所述第二包层之间的发光层， 第二包层，第一包层由Inx1Al1Ga1-x1-y1N制成，其中x1> 0且y1> 0，第二包层由Inx2Al2Ga1-x2-y2N制成，其中0≤x2≤约0.02和约0.03 ≤y2≤约0.07。

公开(公告)号：EP2779333A1

公开(公告)日：2014-09-17

申请号：EP12843889.2

申请日：2012-06-22

申请人： Sumitomo Electric Industries, Ltd. ,  Sony Corporation

发明人： KYONO Takashi ,  ENYA Yohei ,  UENO Masaki ,  YANASHIMA Katsunori ,  TASAI Kunihiko ,  NAKAJIMA Hiroshi ,  FUTAGAWA Noriyuki

IPC分类号： H01S5/343 ,  H01S5/22

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

摘要： A nitride semiconductor light emitting device having a structure capable of reducing a lateral spread of carriers flowing from a semiconductor ridge is provided. In the semiconductor laser on the {20-21} plane, two-dimensional hole gas is created at the heterojunction in a hole band. When the heterojunction that generates two-dimensional hole gas is located outside the semiconductor ridge, the two-dimensional hole gas causes carriers in the lateral direction to spread in the p-side semiconductor region. On the other hand, two-dimensional hole gas cannot be generated at the heterojunction in the hole band in the semiconductor laser on the c-plane. When the heterojunction HJ is contained in the semiconductor ridge, two-dimensional hole gas does not cause carriers flowing out of the semiconductor ridge to spread in the lateral direction.

摘要翻译： 提供了一种氮化物半导体发光器件，该氮化物半导体发光器件具有能够减小从半导体脊流动的载流子的横向扩展的结构。 在{20-21}面的半导体激光器中，在空穴带的异质结中产生二维空穴气体。 当产生二维空穴气体的异质结位于半导体脊的外部时，二维空穴气体导致横向载流子扩散到p侧半导体区域中。 另一方面，在c面上的半导体激光器的空穴带中的异质结处不能产生二维空穴气体。 当异质结HJ被包含在半导体脊中时，二维空穴气不会导致从半导体脊流出的载流子在横向方向上扩散。

公开(公告)号：EP2793330A1

公开(公告)日：2014-10-22

申请号：EP12857315.1

申请日：2012-12-07

申请人： Sony Corporation ,  Sumitomo Electric Industries, Ltd.

发明人： FUTAGAWA Noriyuki ,  NAKAJIMA Hiroshi ,  YANASHIMA Katsunori ,  KYONO Takashi ,  ADACHI Masahiro

IPC分类号： H01S5/343 ,  H01S5/22

CPC分类号： H01S5/2206 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/176

摘要： A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer (2) including a light emitting layer, the epitaxial layer (2) being formed on the semi-polar surface of the semiconductor substrate, and including a ridge section (18); a first electrode (14) formed on a top surface of the ridge section; an insulating layer (12) covering the epitaxial layer in an adjacent region (18a) of the ridge section and a side surface (18b) of the ridge section, the insulating layer (12) covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode (13) formed to cover a top surface of the first electrode and the insulating layer and being electrically connected to the first electrode; and a second electrode (15) formed on a surface, of the semiconductor substrate, opposite to the surface where the epitaxial layer is formed.

摘要翻译： 激光二极管装置包括：包括半极性表面的半导体衬底，所述半导体衬底由六边形III族氮化物半导体形成; 包括发光层的外延层（2），所述外延层（2）形成在半导体衬底的半极性表面上，并且包括脊部（18）; 形成在所述脊部的上表面上的第一电极（14） 在所述脊部的相邻区域（18a）中覆盖所述外延层的绝缘层（12）和所述脊部的侧面（18b），所述绝缘层（12）覆盖所述第一电极的一部分或全部的侧面 从外延层连续; 形成为覆盖所述第一电极和所述绝缘层的顶表面并且电连接到所述第一电极的焊盘电极（13） 以及形成在所述半导体衬底的与形成所述外延层的表面相反的表面上的第二电极（15）。