公开(公告)号：EP3073537A1

公开(公告)日：2016-09-28

申请号：EP16169171.2

申请日：2007-06-06

申请人： SunPower Corporation

发明人： DE CEUSTER, Denis ,  COUSINS, Peter J.

IPC分类号： H01L31/061 ,  H01L31/068 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

摘要： In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.

摘要翻译： 在一个实施例中，太阳能电池具有形成在背面的基极和发射极扩散区域。 发射极扩散区被配置为收集太阳能电池中的少数电荷载流子，而基极扩散区被配置成收集多数电荷载流子。 发射极扩散区域可以是分离基极扩散区域的连续区域。 每个基底扩散区域可以具有减小的面积以减少少数电荷载流子复合损耗，而不会由于多数电荷载流子的横向流动而基本上增加串联电阻损耗。 例如，每个基底扩散区域可以具有点状。

公开(公告)号：EP2828897A1

公开(公告)日：2015-01-28

申请号：EP12871937.4

申请日：2012-12-19

申请人： SunPower Corporation

发明人： SWANSON, Richard M. ,  BUNEA, Marius M. ,  SMITH, David D. ,  SHEN, Yu-Chen ,  COUSINS, Peter J. ,  DENNIS, Tim

IPC分类号： H01L31/042 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

摘要翻译： 描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。 在一个示例中，一种方法包括在具有受控气氛的处理工具中，在太阳能电池的半导体衬底的表面上形成薄的电介质层。 半导体衬底具有带隙。 在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。 半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

公开(公告)号：EP2652795A2

公开(公告)日：2013-10-23

申请号：EP11869509.7

申请日：2011-10-03

申请人： Sunpower Corporation

发明人： RIM, Seung Bum ,  KIM, Taeseok ,  SMITH, David D. ,  COUSINS, Peter J.

IPC分类号： H01L31/042 ,  H01L31/06 ,  H01L31/18

CPC分类号： H01L29/861 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

摘要： Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.