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公开(公告)号：EP4368747A1
公开(公告)日：2024-05-15
申请号：EP22930431.6
申请日：2022-04-21
发明人： LIU, Yanan , ZHANG, Bin , CHEN, Chen , WANG, Dengzhi , LIU, Huan
IPC分类号： C23C16/513 , C23C16/455
CPC分类号： Y02P70/50
摘要： The present invention belongs to the technical field of PECVD devices. Disclosed are a drooping cover plate and a PECVD device having the drooping cover plate. In the drooping cover plate of the present invention, a first insulating frame is arranged on a bottom plate frame, and a second insulating frame is arranged on the first insulating frame; the bottom plate frame is formed of several bottom plates connected to each other, a lower side face of each bottom plate is provided with an extension portion that is perpendicular to the lower side face of the bottom plate; the first insulating frame is formed of several first insulating plates joined together, and the second insulating frame is formed of several second insulating plates joined together; and several strip-shaped holes communicating an inner side and an outer side of the bottom plate frame are formed between upper side surfaces of the bottom plates and lower side surfaces of the first insulating plates and between upper side surfaces of the first insulating plates and lower side surfaces of the second insulating plates, and the height of each strip-shaped hole in a thickness direction of the bottom plate frame is 1-20 mm. The drooping cover plate in the present embodiment can greatly improve the processing efficiency and yield of a vacuum deposition process.
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公开(公告)号：EP4353865A1
公开(公告)日：2024-04-17
申请号：EP22930430.8
申请日：2022-04-21
发明人： WANG, Dengzhi , WANG, Fengming , CHEN, Chen , QU, Qingyuan , HE, Xueyong , LI, Wangjun
IPC分类号： C23C16/44
CPC分类号： Y02P70/50
摘要： The present disclosure provides a structure and a method for solving parasitic plasma in a plasma processing apparatus, which belong to the field of plasma processing apparatus. In the structure, a first gas channel is in communication with a narrow-bore insulating tube and a second gas channel. The narrow-bore insulating tube is configured to feed a process gas into a gas distribution assembly. An on-off valve is disposed between the second gas channel and the first gas channel. The second gas channel is configured to feed a cleaning gas into the gas distribution assembly. Therefore, on the one hand, the on-off valve can be closed before the processing, and a cleaning gas with a preset pressure can be fed into the wide-bore insulating tube and the second gas channel, thereby forming a relatively high-pressure environment in the wide-bore insulating tube and the second gas channel. On the other hand, the gas paths of the process gas and the cleaning gas are separate from each other, so that the path of the process gas can have a relatively small inner diameter, thereby preventing electrolysis of the process gas and generation of parasitic plasma before the process gas entering into the processing chamber, which effectively reduces the probability of rupture or damage of the insulating tube caused by the parasitic plasma.
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公开(公告)号：EP4191688A1
公开(公告)日：2023-06-07
申请号：EP21854146.4
申请日：2021-04-12
发明人： ZHOU, Jian , CAO, Xinmin , CHEN, Chen , WANG, Dengzhi , WANG, Chao
IPC分类号： H01L31/20 , H01L31/0747 , C23C16/54 , C23C16/24
摘要： Provided are a heterojunction solar cell coating apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell coating apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity (1), a preheating cavity (2), intrinsic process cavities (3), doping process cavities (4) and an unloading cavity (5) that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve (9). At least two intrinsic process cavities (3) are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity (4) is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity (2) comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere. The apparatus combines control over the gas proportion and the pressure, can process a plurality of solar cells at the same time, and improves the overall processing efficiency.
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公开(公告)号：EP3985143A1
公开(公告)日：2022-04-20
申请号：EP20836223.6
申请日：2020-07-10
发明人： SUN, Jian , ZHOU, Jian , CHEN, Chen
IPC分类号： C23C16/458
摘要： Disclosed is a composite tray, comprising support units and a substrate used for receiving the support units. Each support unit is provided with a silicon wafer placement area used for receiving a silicon wafer; and the substrate and the support units are made of different materials. The composite tray is made of two different materials, and can overcome the defect of a composite tray made of a single material, the performance of the composite tray in the aspects of strength, heat insulation, heat conduction and the like can be met, the cost is lower, and batch use is facilitated.
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