LASER THIN FILM POLY-SILICON ANNEALING SYSTEM
    2.
    发明公开
    LASER THIN FILM POLY-SILICON ANNEALING SYSTEM 有权
    激光薄膜多晶硅AUSHEIZSYSTEM

    公开(公告)号:EP1687877A4

    公开(公告)日:2008-10-08

    申请号:EP04810724

    申请日:2004-11-12

    申请人: TCZ PTE LTD

    摘要: A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in a film on a workpiece is disclosed, which may comprise a master oscillator power amplifier MOPA or power oscillator power amplifier configured XeF laser system producing a laser output light pulse beam at a high repetition rate and high power with a pulse to pulse dose control; an optical system producing an elongated thin pulsed working beam from the laser output light pulse beam. The apparatus may further comprise the laser system is configured as a POPA laser system and further comprising: relay optics operative to direct a first output laser light pulse beam from a first laser PO unit into a second laser PA unit; and, a timing and control module timing the creation of a gas discharge in the first and second laser units within plus or minus 3 ns, to produce the a second laser output light pulse beam as an amplification of the first laser output light pulse beam. The system may comprise divergence control in the oscillator laser unit. Divergence control may comprise an unstable resonator arrangement. The system may further comprise a beam pointing control mechanism intermediate the laser and the workpiece and a beam position control mechanism intermediate the laser and the workpiece. Beam parameter metrology may provide active feedback control to the beam pointing mechanism and active feedback control to the beam position control mechanism.

    LASER THIN FILM POLY-SILICON ANNEALING OPTICAL SYSTEM
    3.
    发明公开
    LASER THIN FILM POLY-SILICON ANNEALING OPTICAL SYSTEM 有权
    光学薄膜膜LASERWÄRMEAUSGLÜHSYSTEM多晶硅

    公开(公告)号:EP1689552A4

    公开(公告)日:2008-12-03

    申请号:EP04810725

    申请日:2004-11-12

    申请人: TCZ PTE LTD

    摘要: A high energy, high repetition rate workpiece surface heating method and apparatus are disclosed which may comprise a pulsed XeF laser operating operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical system narrowing the laser output light pulse beam to less than 20 [mu]m in a short axis of the laser output light pulse beam and expanding the laser output light pulse beam to form in a long axis of the beam workpiece covering extent of the long axis; the optical system including a field stop intermediate the laser and the workpiece; the workpiece comprising a layer to be heated; ; wherein the optical system focuses the laser output light pulse beam at a field stop with a magnification sufficient to maintain an intensity profile that has sufficiently steep side walls to allow the field stop to maintain a sufficiently steep beam profile at the workpiece without blocking the beam profile at too high an intensity level 2. The apparatus may also have a high average power in the laser output light pulse beam as delivered to the workpiece and a linebow correction mechanism in a short axis optical assembly. The linebow correction mechanism may comprise a plurality of weak cross cylinders. The system may comprise a catadioptric projection system. The line width due to laser diffraction and divergence may be less than geometric limitations.; The system may project adjacent peaks of the nominal XeF spectrum to improve overall depth of focus through the separate center wavelengths of each respective adjacent peak having a different focal plane at the workpiece. The system may comprise a linebow is correction mechanism within a field stop optical assembly correcting linebow at the field stop plane and within a workpiece projection optical assembly correcting linebow at the workpiece plane.