公开(公告)号：EP3683847A1

公开(公告)日：2020-07-22

申请号：EP18854107.2

申请日：2018-08-30

申请人： TDK Corporation

发明人： ARIMA, Jun ,  HIRABAYASHI, Jun ,  FUJITA, Minoru ,  KAWASAKI, Katsumi ,  INOKUCHI, Daisuke

IPC分类号： H01L29/872 ,  H01L21/28 ,  H01L29/06 ,  H01L29/47

摘要： An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

公开(公告)号：EP4318552A1

公开(公告)日：2024-02-07

申请号：EP22774872.0

申请日：2022-02-24

申请人： TDK Corporation

发明人： FUJITA, Minoru ,  ARIMA, Jun ,  KAWASAKI, Katsumi ,  HIRABAYASHI, Jun

IPC分类号： H01L21/301

摘要： To divide a β-type gallium oxide substrate having a (001) plane as a main surface satisfactorily. A method of diving a gallium oxide substrate includes: a step of forming a plurality of dividing grooves 13 along the extending direction of the (100) plane of a β-type gallium oxide substrate 10 having the (001) plane as the main surface; a step of processing the β-type gallium oxide substrate 10 into strips by cutting the substrate 10 in a direction perpendicular to the extending direction of the dividing grooves 13; and a step of cleaving the strip-shaped β-type gallium oxide substrates 10 along the dividing grooves 13 for singulation. Since the plurality of dividing grooves 13 are thus formed along the cleavage planes, the substrate can be divided satisfactorily without causing flaky peeling on the cleavage surfaces by cleaving the substrate along the dividing grooves 13.

公开(公告)号：EP3872866A1

公开(公告)日：2021-09-01

申请号：EP19876519.0

申请日：2019-10-09

申请人： TDK Corporation ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： ARIMA, Jun ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  SASAKI Kohei

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/41 ,  H01L29/47

摘要： An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20, an insulating layer 80 provided on the drift layer 30 so as to surround the anode electrode 40 in a plan view, and a semiconductor layer 70 provided on a surface of a part of the drift layer 30 that is positioned between the anode electrode 40 and the insulating layer 80 and on the insulating layer 80. The semiconductor layer 70 has a conductivity type opposite to that of the drift layer 30 .

公开(公告)号：EP3761374A1

公开(公告)日：2021-01-06

申请号：EP19761259.1

申请日：2019-02-25

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc. ,  TDK Corporation

发明人： SASAKI, Kohei ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  ARIMA, Jun

IPC分类号： H01L29/872 ,  C30B29/16 ,  C30B33/08 ,  H01L21/329 ,  H01L29/41 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868 ,  H01L29/94

摘要： Provided is a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 that is formed from a Ga 3 O 3 single crystal; a second semiconductor layer 11 that is formed from a Ga 3 O 3 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 µm or less, in a region that includes the inner surface of the trench 12.

公开(公告)号：EP3608972A1

公开(公告)日：2020-02-12

申请号：EP18778040.8

申请日：2018-01-26

申请人： TDK Corporation

发明人： HIRABAYASHI, Jun ,  FUJITA, Minoru ,  FUKUMITSU, Yoshiaki

IPC分类号： H01L29/872 ,  H01L21/316 ,  H01L21/318 ,  H01L21/365 ,  H01L29/06 ,  H01L29/47

摘要： An object of the present invention is to provide a vertical semiconductor device in which a leakage current flowing along the wafer side surface, and defects in the side surface, such as cracking, chipping and cleavage hardly occur. A semiconductor device includes a semiconductor layer 20 including first and second electrode forming surfaces 20a, 20b and side surface 20c, an anode electrode 40 formed on the first electrode forming surface 20a, a cathode electrode 50 formed on the second electrode forming surface 20b; an insulating film 30 continuously formed from the first electrode forming surface 20a to the side surface 20c so as to cover the first edge E1. According to the present invention, the side surface 20a of the semiconductor layer 20 is covered with the insulating film 30, so that a leak current flowing along the side surface 20c is reduced. Further, the side surface 20c is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.