公开(公告)号：EP3832322A1

公开(公告)日：2021-06-09

申请号：EP20211090.4

申请日：2020-12-01

申请人： TDK Corporation

发明人： LO, Adrian ,  KAMI, Masafumi ,  HIRABAYASHI, Jun

IPC分类号： G01R15/20 ,  G01R19/00

摘要： Disclosed herein is a current sensor that includes a bus bar and a magnetic sensor. The bus bar includes first and second cylindrical structure parts which are coaxially arranged, and a sensing part disposed in a hollow area surrounded by the first and second cylindrical structure parts. The magnetic sensor is disposed in the hollow area. The bus bar is configured to branch current to be measured into the first cylindrical structure part and sensing part and to make at least part of a current component of the current to be measured that flows in the first cylindrical structure part in one direction flow in the second cylindrical structure part in an opposite direction to the one direction.

公开(公告)号：EP0894632A1

公开(公告)日：1999-02-03

申请号：EP97949184.2

申请日：1997-12-19

申请人： TDK Corporation

发明人： SUSUKIDA, Masato ,  NAGANO, Katsuto ,  YOSHIDA, Atsushi ,  HIRABAYASHI, Jun ,  SAITA, Yoshio ,  HAGIWARA, Jun

IPC分类号： B41J2/335

CPC分类号： B41J2/3352 ,  B41J2/3355 ,  B41J2/3357 ,  B41J2/33575 ,  B41J2/3359 ,  Y10T29/49083

摘要： An wear-resistant layer 50 constituting a printing surface which is brought into contact with a thermal record medium is formed on a provisional substrate 70 having a groove formed in its surface, said groove having a substantially semicircular cross section, and a heat generating layer 51, electrically conductive layers 52a and 52b electrically connected to the heat generating layer, a protection layer 54a and a heat storage layer 58 are stacked in turn to form a printing section. Next, a driving IC 55 for controlling a heating electric power to be supplied to the printing section is connected to the electrically conductive layer and a wiring section 53 for connecting the driving IC to an external circuit is provided. Thereafter, the printing section is secured to a heat dissipating member 59 by means of a resin 62, and a common electrode 84 and wires 56 are secured to the heat dissipating member by means of both-sided adhesive tapes 82 and 83. After covering an assembly with an etching resist 85 except for the substrate 70, the substrate is removed by etching and the printing surface protruded outwardly is exposed.

摘要翻译： 构成与热记录介质接触的印刷面的耐磨层50形成在具有形成在其表面上的槽的临时基板70上，所述槽具有大致半圆形的横截面，并且发热层51 电连接到发热层的导电层52a和52b，保护层54a和蓄热层58依次堆叠以形成印刷部分。 接下来，提供用于控制供给印刷部的加热电力的驱动IC55与导电层连接，并且提供用于将驱动IC连接到外部电路的布线部53。 此后，通过树脂62将打印部分固定到散热构件59，并且通过双面胶带82和83将公共电极84和电线56固定到散热构件。在覆盖 与除基板70之外的抗蚀剂85的组装，通过蚀刻除去基板，露出向外突出的印刷表面。

公开(公告)号：EP3683847A1

公开(公告)日：2020-07-22

申请号：EP18854107.2

申请日：2018-08-30

申请人： TDK Corporation

发明人： ARIMA, Jun ,  HIRABAYASHI, Jun ,  FUJITA, Minoru ,  KAWASAKI, Katsumi ,  INOKUCHI, Daisuke

IPC分类号： H01L29/872 ,  H01L21/28 ,  H01L29/06 ,  H01L29/47

摘要： An object of the present invention is to provide a Schottky barrier diode which is less likely to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, and a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20. The drift layer 30 has an outer peripheral trench 10 formed at a position surrounding the anode electrode 40 in a plan view. An electric field is dispersed by the presence of the outer peripheral trench 10 formed in the drift layer 30. This alleviates concentration of the electric field on the corner of the anode electrode 40, making it unlikely to cause dielectric breakdown.

公开(公告)号：EP4318552A1

公开(公告)日：2024-02-07

申请号：EP22774872.0

申请日：2022-02-24

申请人： TDK Corporation

发明人： FUJITA, Minoru ,  ARIMA, Jun ,  KAWASAKI, Katsumi ,  HIRABAYASHI, Jun

IPC分类号： H01L21/301

摘要： To divide a β-type gallium oxide substrate having a (001) plane as a main surface satisfactorily. A method of diving a gallium oxide substrate includes: a step of forming a plurality of dividing grooves 13 along the extending direction of the (100) plane of a β-type gallium oxide substrate 10 having the (001) plane as the main surface; a step of processing the β-type gallium oxide substrate 10 into strips by cutting the substrate 10 in a direction perpendicular to the extending direction of the dividing grooves 13; and a step of cleaving the strip-shaped β-type gallium oxide substrates 10 along the dividing grooves 13 for singulation. Since the plurality of dividing grooves 13 are thus formed along the cleavage planes, the substrate can be divided satisfactorily without causing flaky peeling on the cleavage surfaces by cleaving the substrate along the dividing grooves 13.

公开(公告)号：EP3872866A1

公开(公告)日：2021-09-01

申请号：EP19876519.0

申请日：2019-10-09

申请人： TDK Corporation ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： ARIMA, Jun ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  SASAKI Kohei

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/41 ,  H01L29/47

摘要： An object of the present invention is to provide a Schottky barrier diode less liable to cause dielectric breakdown due to concentration of an electric field. A Schottky barrier diode according to this disclosure includes a semiconductor substrate 20 made of gallium oxide, a drift layer 30 made of gallium oxide and provided on the semiconductor substrate 20, an anode electrode 40 brought into Schottky contact with the drift layer 30, a cathode electrode 50 brought into ohmic contact with the semiconductor substrate 20, an insulating layer 80 provided on the drift layer 30 so as to surround the anode electrode 40 in a plan view, and a semiconductor layer 70 provided on a surface of a part of the drift layer 30 that is positioned between the anode electrode 40 and the insulating layer 80 and on the insulating layer 80. The semiconductor layer 70 has a conductivity type opposite to that of the drift layer 30 .

公开(公告)号：EP3761374A1

公开(公告)日：2021-01-06

申请号：EP19761259.1

申请日：2019-02-25

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc. ,  TDK Corporation

发明人： SASAKI, Kohei ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  ARIMA, Jun

IPC分类号： H01L29/872 ,  C30B29/16 ,  C30B33/08 ,  H01L21/329 ,  H01L29/41 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868 ,  H01L29/94

摘要： Provided is a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 that is formed from a Ga 3 O 3 single crystal; a second semiconductor layer 11 that is formed from a Ga 3 O 3 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 µm or less, in a region that includes the inner surface of the trench 12.

公开(公告)号：EP3608972A1

公开(公告)日：2020-02-12

申请号：EP18778040.8

申请日：2018-01-26

申请人： TDK Corporation

发明人： HIRABAYASHI, Jun ,  FUJITA, Minoru ,  FUKUMITSU, Yoshiaki

IPC分类号： H01L29/872 ,  H01L21/316 ,  H01L21/318 ,  H01L21/365 ,  H01L29/06 ,  H01L29/47

摘要： An object of the present invention is to provide a vertical semiconductor device in which a leakage current flowing along the wafer side surface, and defects in the side surface, such as cracking, chipping and cleavage hardly occur. A semiconductor device includes a semiconductor layer 20 including first and second electrode forming surfaces 20a, 20b and side surface 20c, an anode electrode 40 formed on the first electrode forming surface 20a, a cathode electrode 50 formed on the second electrode forming surface 20b; an insulating film 30 continuously formed from the first electrode forming surface 20a to the side surface 20c so as to cover the first edge E1. According to the present invention, the side surface 20a of the semiconductor layer 20 is covered with the insulating film 30, so that a leak current flowing along the side surface 20c is reduced. Further, the side surface 20c is protected by the insulating film, making cracking, chipping, cleavage, and the like less likely to occur.

公开(公告)号：EP0894632B1

公开(公告)日：2005-09-07

申请号：EP97949184.2

申请日：1997-12-19

申请人： TDK Corporation

发明人： SUSUKIDA, Masato ,  NAGANO, Katsuto ,  YOSHIDA, Atsushi ,  HIRABAYASHI, Jun ,  SAITA, Yoshio ,  HAGIWARA, Jun

IPC分类号： B41J2/335

CPC分类号： B41J2/3352 ,  B41J2/3355 ,  B41J2/3357 ,  B41J2/33575 ,  B41J2/3359 ,  Y10T29/49083

摘要： An abrasion-resistant layer (50) of which a printing surface which is brought into contact with a thermal recording medium is formed on a temporary substrate (70) for manufacturing which has a trench having a semi-circular cross section in its surface. A heating layer (51), conductive layers (52a and 52b) constituting electrodes connected to the heating layer, protection layer (54a) and a regenerating layer (58) are built up on the surface of the abrasion-resistant layer to form a printing part. Further, a driving (IC55) which is connected to the conductive layers and controls a heating power supplied to the printing part and wiring parts (53) with which the driving (IC55) is connected to an external circuit are formed. The printing part and a radiation member (59) are fixed to each other with resin (62) and a common electrode (84) connected to the conductive layer (52a), a wiring (56) and a radiation member are fixed to each other with double-sided adhesive tapes (82 and 83). After the whole surface except the substrate (70) is covered with etching resist (85), the substrate is removed by etching to expose the printing surface protruding outward.

摘要翻译： 在表面上具有半圆形横截面的沟槽的用于制造的临时衬底（70）上形成与热记录介质接触的印刷表面的耐磨层（50）。 在耐磨层的表面上形成加热层（51），构成与加热层，保护层（54a）和再生层（58）连接的电极的导电层（52a和52b）以形成印刷 部分。 此外，形成连接到导电层并控制提供给打印部分的加热功率的驱动（IC55），以及驱动（IC55）连接到外部电路的配线部分（53）。 印刷部分和辐射部件（59）通过树脂（62）和连接到导电层（52a）的公共电极（84）彼此固定，布线（56）和辐射部件彼此固定 用双面胶带（82和83）。 在除了衬底（70）之外的整个表面被抗蚀剂（85）覆盖之后，通过蚀刻去除衬底以暴露向外突出的印刷表面。