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    Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
    2.
    发明公开
    Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device 审中-公开
    半导体叠层体，半导体装置及其制造一种制造半导体器件的半导体层叠体和方法方法

    公开(公告)号：EP2701182A2

    公开(公告)日：2014-02-26

    申请号：EP13187578.3

    申请日：2011-12-09

    申请人： TEIJIN LIMITED

    发明人： Tomizawa, Yuka ,  Ikeda, Yoshinori ,  Imamura, Tetsuya

    IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L31/06 ,  H01L31/068 ,  H01L31/18 ,  H01L29/04 ,  H01L29/66

    CPC分类号： H01L29/36 ,  C01B33/02 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02686 ,  H01L21/2254 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66765 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below and is characterized in that the crystal orientation of a first dopant implanted layer (52) is the same as the crystal orientation of a semiconductor layer or a base (10) that is formed of a semiconductor element. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

    摘要翻译： 提供了一种用于制造半导体器件的方法。 这样设置：其可通过所述方法获得的半导体器件; 和分散都可以在该方法中使用。 本发明的一种用于制造半导体器件的方法（500A）包括步骤（a） - （c）所示描述的和做第一掺杂剂注入层的结晶取向的特征（52）是相同的晶体取向 的半导体层或一个底座（10）的所形成的半导体元件的。 （A），其含有掺杂颗粒的分散体被应用到层或碱的特定部分。 （B）未烧结的掺杂物注入层通过干燥所施加的分散体获得。 （C）的层或基体的特定部分通过使用光照射未烧结的掺杂剂注入层掺杂有p型或n型掺杂剂，以及未烧结的掺杂物注入层被烧结，从而获得掺杂剂注入层做 集成了层或基极。