摘要:
Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250°C for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of Al A Ga B In C N; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.
摘要:
Disclosed is a method for producing a porous carbon material comprising: heating a cured phenolic resin complex lump, including 150 to 450 parts by weight of sodium hydroxide and/or potassium hydroxide per 100 parts by weight of phenolic resin, at a temperature of 420 to 850°C in a non-oxidizing atmosphere to obtain carbonized material; and washing and removing sodium hydroxide and potassium hydroxide included in the carbonized material. According to the present invention, there can be provided a porous carbon material, including large volumes of subnano-pores having a diameter of in a range of 0.45 to 1.0 nm with a sharp distribution, which is particularly useful as a gaseous adsorbent.