摘要:
A reliability evaluation test apparatus (10) of this invention includes a wafer storage section (12) which stores a wafer (W) in a state wherein the electrode pads of a number of devices formed on the wafer and the bumps of a contactor (11) are totally in electrical contact with each other. The wafer storage section (12) transmits/receives a test signal to/from a measurement section (15) and has a hermetic and heat insulating structure. The wafer storage section (12) has a pressure mechanism (13) which presses the contactor (11) and a heating mechanism (14) which directly heats the wafer (W) totally in contact with the contactor (11) to a predetermined high temperature. The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.
摘要:
A reliability tester (10) comprises a wafer containing section (12) containing a wafer (W) in the state that electrode pads of many devices formed on the wafer are all in electrical contact with bumps of a contactor (11). This wafer containing section (12) transmits/receives test signals with a measuring section (15) and has a hermetic and heat-insulating structure. The wafer containing section (12) has a pressing mechanism (13) for pressing the contactor (11) and a heating mechanism (14) for directly heating the wafer (W) in all contact with the contactor (11) to a predetermined high temperature. Thus, this tester evaluates the reliability of a wiring film and that of an insulation film formed on the semiconductor wafer under an acceleration condition.
摘要:
A reliability evaluation test apparatus (10) of this invention includes a wafer storage section (12) which stores a wafer (W) in a state wherein the electrode pads of a number of devices formed on the wafer and the bumps of a contactor (11) are totally in electrical contact with each other. The wafer storage section (12) transmits/receives a test signal to/from a measurement section (15) and has a hermetic and heat insulating structure. The wafer storage section (12) has a pressure mechanism (13) which presses the contactor (11) and a heating mechanism (14) which directly heats the wafer (W) totally in contact with the contactor (11) to a predetermined high temperature. The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.