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    Method of removing an oxide film on a substrate
    5.
    发明公开
    Method of removing an oxide film on a substrate 失效
    Verfahren und EinrichtungfürOberflächenbehandlung。

    公开(公告)号：EP0376252A2

    公开(公告)日：1990-07-04

    申请号：EP89123964.2

    申请日：1989-12-27

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Nishino, Hirotaka ,  Hayasaka, Nobuo ,  Okano, Haruo

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76802 ,  H01L21/31116

    摘要： An oxide film such as native oxide film can be etched by forming a haloid or a liquid containing hydrogen halide, which is produced by a gas reaction such as one between a halogen-containing gas and a basic gas, on the oxide film. The etching proceeds mainly in a chemical reaction. So, the excellent etching selectivity of the oxide film with respect to underlying substrate is obtained, and the substrate receives no damage by the etching. Furthermore, the etching can be carried out before processes such as etching, deposition, oxidation, diffusion, or epitaxial growth are carried out to the substrate. The processed layer formed on the substrate, therefore, does not contain any useless native oxide.

    摘要翻译： 可以通过在氧化物膜上形成通过诸如含卤素的气体和碱性气体之类的气体反应产生的卤化物的卤化物或含有卤化氢的液体来蚀刻诸如天然氧化物膜的氧化物膜。 蚀刻主要进行化学反应。 因此，获得氧化膜相对于下面的衬底的优异的蚀刻选择性，并且衬底不会受到蚀刻的损伤。 此外，可以在对基板进行诸如蚀刻，沉积，氧化，扩散或外延生长的处理之前进行蚀刻。 因此，在基板上形成的处理层不含任何无用的天然氧化物。

    Semiconductor device structure with specifically dimensioned redundancy fuses for laser repair
    6.
    发明公开
    Semiconductor device structure with specifically dimensioned redundancy fuses for laser repair 审中-公开
    与激光修理具体尺寸的冗余熔丝的半导体器件结构

    公开(公告)号：EP1037278A9

    公开(公告)日：2004-10-27

    申请号：EP00105329.7

    申请日：2000-03-16

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Ikegami, Hiroshi ,  Sasaki, Keiichi ,  Hayasaka, Nobuo

    IPC分类号： H01L21/768 ,  H01L23/525 ,  H01L21/268 ,  H01L23/538

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a semiconductor device in which redundancy fuses (16, 17) formed in an upper layer wiring region can be cut without damaging an underlying Si substrate (11) or adjacent regions. The semiconductor device comprises a lower layer wiring (13) formed within an interlayer insulating film (12) on the Si substrate (11), and an upper layer metal wiring (15) made of Al, Cu or the like, formed above the lower layer wiring (13) and connected thereto through a via metal (14), wherein the redundancy fuses (16, 17) are formed in the same wiring layer as the upper layer metal wiring (15). For cutting a fuse (16) by irradiating with a laser having a wavelength in a range of 1,000 to 1,100 nm and a beam diameter D ( µm), the fuse (16) may be designed to have a film thickness T ( µm) and a width W ( µm) which satisfy T ≦ (-0.15 (D+2σ) +0.46) exp (2W), where σ ( µm) is an alignment accuracy of the center of the laser beam to the center of the fuse (16), with the result that the fuse (16) formed in the same wiring layer as the upper layer metal wiring (15) can be cut without damaging the Si substrate (11), an adjacent fuse (17) and the upper layer metal wiring (15).

    Method of removing an oxide film on a substrate
    8.
    发明公开
    Method of removing an oxide film on a substrate 失效
    表面处理装置和方法

    公开(公告)号：EP0376252A3

    公开(公告)日：1991-03-13

    申请号：EP89123964.2

    申请日：1989-12-27

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Nishino, Hirotaka ,  Hayasaka, Nobuo ,  Okano, Haruo

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76802 ,  H01L21/31116

    摘要： An oxide film such as native oxide film can be etched by forming a haloid or a liquid containing hydrogen halide, which is produced by a gas reaction such as one between a halogen-containing gas and a basic gas, on the oxide film. The etching proceeds mainly in a chemical reaction. So, the excellent etching selectivity of the oxide film with respect to underlying substrate is obtained, and the substrate receives no damage by the etching. Furthermore, the etching can be carried out before processes such as etching, deposition, oxidation, diffusion, or epitaxial growth are carried out to the substrate. The processed layer formed on the substrate, therefore, does not contain any useless native oxide.

    Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices
    9.
    发明公开
    Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 审中-公开
    从气相处理的无机氧化物颗粒和抛光浆料，和处理的水的固体载用于生产半导体器件

    公开(公告)号：EP1020506A2

    公开(公告)日：2000-07-19

    申请号：EP00100845.7

    申请日：2000-01-17

    申请人： KABUSHIKI KAISHA TOSHIBA ,  JSR Corporation

    发明人： Yano, Hiroyuki ,  Hayasaka, Nobuo ,  Okumura, Katsuya ,  Iio, Akira ,  Hattori, Masayuki ,  Kubota, Kiyonobu

    IPC分类号： C09K3/14 ,  C09G1/02

    CPC分类号： C09G1/02 ,  C09K3/1463

    摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry.
    Said water-laden solid matter is within a range of 0.3 to 3 g/cm 3 in bulk density and within a range of 0.5 to 100 mm⌀ in average particle size when manufactured granular.
    Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0µm.

    摘要翻译： 水载货固体物质通过添加水40〜300重量份的煅制工艺或金属蒸镀氧化工艺合成的无机氧化物粒子100组重量份中提供的所有被获得，抛光浆料中提供的所有其制造通过使用水 加载固体物质，并使用上述浆料的制造半导体器件的方法。 所述水载货固体物质是在堆积密度的范围为0.3〜3克/厘米<3>粒状内，并且范围在平均粒径0.5至100mm直径内制造时。 所述用于抛光浆料从水载货固体物质制造，并且分散在水中后其平均粒径是一个范围的0:05至1.0微米范围内。