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1.发明公开MICROWAVE PLASMA PROCESS DEVICE, PLASMA IGNITION METHOD, PLASMA FORMING METHOD, AND PLASMA PROCESS METHOD 有权微波等离子体工艺设备，PLASMAZÜNDVERFAHREN，等离子体形成方法及电浆问题的处理方法
公开(公告)号：EP1376668A1
公开(公告)日：2004-01-02
申请号：EP02707230.5
申请日：2002-03-28
发明人： OHMI, Tadahiro , HIRAYAMA, M. DEPT. OF ELECTRONIC ENGIN. GRADUATE , SUGAWA, S. DEPT. OF ELECTRONIC ENGIN. GRADUATE , GOTO, T. DEPT. OF ELECTRONIC ENGIN. GRADUATE
IPC分类号： H01L21/31 , H01L21/205 , B01J19/08 , C23C16/511 , H01L21/265 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32192 , C23C16/517 , H01J37/32009 , H01J37/32339
摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing. In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.
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