公开(公告)号：EP2878006B9

公开(公告)日：2017-04-12

申请号：EP12742856.3

申请日：2012-07-24

申请人： Ev Group E. Thallner GmbH

发明人： PLACH, Thomas ,  HINGERL, Kurt ,  WIMPLINGER, Markus ,  FLÖTGEN, Christoph

IPC分类号： H01L21/67 ,  H01J37/32 ,  B32B38/10 ,  B32B37/00 ,  H01L21/20 ,  H01L21/18

CPC分类号： B32B38/10 ,  B32B37/0046 ,  H01J37/32036 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32339 ,  H01J37/32532 ,  H01J37/32798 ,  H01J2237/334 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/67092

公开(公告)号：EP2992121A1

公开(公告)日：2016-03-09

申请号：EP14720969.6

申请日：2014-04-30

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. ,  H-O-T Härte- Und Oberflächentechnik GmbH & Co. KG

发明人： LESON, Andreas ,  SCHEIBE, Hans-Joachim ,  BACH, Frank-Peter

IPC分类号： C23C14/06 ,  H01J37/34 ,  C23C14/34 ,  C23C28/00 ,  H01J37/147 ,  H01J37/32 ,  C23C14/32

CPC分类号： C23C14/0605 ,  C04B35/52 ,  C23C14/0611 ,  C23C14/325 ,  C23C14/34 ,  C23C28/322 ,  C23C28/343 ,  C23C28/347 ,  H01J37/32055 ,  H01J37/32339 ,  H01J37/34 ,  H01J37/3438 ,  H01J2237/327 ,  H01J2237/3321

摘要： The invention concerns the production of anti-wear layers disposed on surfaces of internal combustion engine components which are exposed to frictional wear. According to the method, anti-wear layers are formed on the particular surface by means of electrical arc discharge under vacuum conditions. The anti-wear layers are formed from at least approximately hydrogen-free, tetrahedral amorphous (ta-C) carbon consisting of a mixture of sp
2 and sp
3 hybridized carbon, and have a microhardness of at least 3500 HV and an arithmetic mean surface measure R
a of 0.1 μm, without mechanical, physical and/or chemical surface treatment.

公开(公告)号：EP2401232B1

公开(公告)日：2016-01-06

申请号：EP10746778.9

申请日：2010-02-24

申请人： University of Virginia Patent Foundation ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： WADLEY, Haydn N. G. ,  MATTAUSCH, Goesta ,  MORGNER, Henry ,  ROEGNER, Frank-Holm

IPC分类号： C01B33/12 ,  C23C16/513 ,  H05H1/24 ,  H01J37/32 ,  H01J37/34 ,  H01J37/305

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

公开(公告)号：EP2032744A2

公开(公告)日：2009-03-11

申请号：EP07811981.5

申请日：2007-05-31

申请人： TEGAL CORPORATION

发明人： NGUYEN, Tue ,  NGUYEN, Tai, Dung ,  BERCAW, Craig, Alan

IPC分类号： C25F1/00 ,  H01L21/302

CPC分类号： C23C16/482 ,  C23C16/45536 ,  H01J37/32009 ,  H01J37/32321 ,  H01J37/32339 ,  H01L21/67115 ,  H01L21/67248

摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

公开(公告)号：EP3194994A1

公开(公告)日：2017-07-26

申请号：EP15763586.3

申请日：2015-09-15

申请人： Academisch Ziekenhuis Leiden ,  Haleakala R&D, Inc.

发明人： AUSSENHOFER, Sebastian ,  WEBB, Andrew ,  ANDERSON, Theodore ,  DEYER, Fred

IPC分类号： G01R33/34 ,  G01R33/385 ,  G01R33/3415 ,  G01R33/36 ,  G01R33/48 ,  H01J37/32

CPC分类号： G01R33/34007 ,  G01R33/3415 ,  G01R33/3635 ,  G01R33/365 ,  G01R33/3657 ,  G01R33/3858 ,  G01R33/421 ,  G01R33/4808 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32339 ,  H01J37/32917 ,  H01J37/32972 ,  H01Q1/26 ,  H01Q5/22 ,  H05H1/24

摘要： A magnetic resonance apparatus comprising: a magnetic system configured to provide a magnetic field throughout at least a portion of a cavity, the magnetic field based on magnetic-system-control-data; a transmitter antenna disposed at least partly within the cavity and configured to transmit radio-frequency-transmitted-signalling based on transmitter-control-data; and a receiver antenna disposed at least partly within the cavity and configured to receive radio-frequency-received-signalling representative of magnetic resonance interactions of at least one object, disposed within the portion of the cavity, with the magnetic field and the radio-frequency-transmitted-signalling; wherein, at least one of the transmitter antenna, the receiver antenna and the magnetic system comprises a plasma antenna, and the magnetic resonance imaging apparatus is configured to provide received-data representative of the radio-frequency-received-signalling, the received-data in combination with the magnetic-system-control-data and the transmitter-control-data suitable for providing magnetic resonance imaging and/or magnetic resonance spectroscopy of the at least one object.

摘要翻译： 1。一种磁共振设备，包括：磁系统，其被配置为在整个空腔的至少一部分上提供磁场，所述磁场基于磁系统控制数据; 发射器天线，所述发射器天线至少部分地设置在所述腔内并且被配置为基于发射器控制数据发射射频发射的信令; 以及接收器天线，所述接收器天线至少部分地设置在所述腔内并被配置为接收表示布置在所述腔的所述部分内的至少一个物体的磁共振相互作用的射频接收信号，所述磁场和所述射频 -transmitted信令; 其中，所述发射器天线，所述接收器天线和所述磁系统中的至少一个包括等离子体天线，并且所述磁共振成像装置被配置为提供表示所述射频接收信号的接收数据，所接收的数据 结合适于提供至少一个物体的磁共振成像和/或磁共振波谱的磁系统控制数据和发射机控制数据。

公开(公告)号：EP2142681A2

公开(公告)日：2010-01-13

申请号：EP08757988.4

申请日：2008-04-21

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： MEYER, Carl-Friedrich

IPC分类号： C23C14/28 ,  H01J37/32

CPC分类号： C23C14/325 ,  C23C14/564 ,  H01J37/32009 ,  H01J37/32055 ,  H01J37/32339 ,  H01J37/3266

摘要： The invention relates to an arrangement for producing coatings on substrates in vacuo. A plasma is produced by electric arc discharge on a target that is connected as the cathode and the arc discharge between an anode and the target is ignited by means of a mobile focused laser beam that is directed through a window onto the surface of the target. The aim of the invention is to provide a technical solution that allows an undesired coating in the window zone of a vacuum chamber to be considerably reduced. To achieve this aim, a permanent magnet or electromagnet is arranged between the window and at least one target laterally next to, above or below the optical axis of the laser beam and the laser beam is guided through a magnetic filed produced by the permanent magnet or electromagnet.

公开(公告)号：EP1376668B1

公开(公告)日：2007-08-22

申请号：EP02707230.5

申请日：2002-03-28

申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, Masaki DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  SUGAWA, Shigetoshi DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  GOTO, Tetsuya DEPT. OF ELECTRONIC ENGIN. GRADUATE

IPC分类号： H01L21/31 ,  H01L21/205 ,  B01J19/08 ,  C23C16/511 ,  H01L21/265 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma process device (10) is provided with a plasma ignition enhancing means for enhancing plasma ignition by microwaves. The plasma ignition enhancing means comprises a deuterium lamp (30) which generates vacuum ultraviolet rays, and a penetration window (32) guiding the vacuum ultraviolet rays, which have penetrated the same, to a plasma excitation space (26). The penetration window (32) is constructed as a convex lens, focusing the vacuum ultraviolet rays to enhance the ionization of the plasma excitation gas. Such arrangement makes it possible to effect plasma ignition easily and rapidly.

公开(公告)号：EP1041172A3

公开(公告)日：2001-07-04

申请号：EP00106840.2

申请日：2000-03-30

申请人： Applied Materials, Inc.

发明人： Yamartino, John M. ,  Loewenhardt, Peter ,  Huang, Kenlin ,  Ma, Diana Xiaobing

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32339 ,  H01J2237/004

摘要： A method of eliminating charging resulting from plasma processing a semiconductor wafer comprising the steps of plasma processing the semiconductor wafer in a manner that may result in topographically dependent charging and exposing, during at least a portion of a time in which the semiconductor wafer is being plasma processed, the semiconductor wafer to particles that remove charge from the semiconductor wafer and reduce topographically dependent charging.

公开(公告)号：EP0674471A1

公开(公告)日：1995-09-27

申请号：EP95108095.1

申请日：1988-01-23

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： Nishimae, Junichi, c/o Mitsubishi Denki K.K. ,  Yoshizawa, Kenji, c/o Mitsubishi Denki K.K. ,  Taki, Masakazu, c/o Mitsubishi Denki K.K. ,  Ueda, Yoshihioro, c/o Mitsubishi Denki K.K. ,  Yanagi, Tadashi, c/o Mitsubishi Denki K.K. ,  Iwata, Akihiko, c/o Mitsubishi Denki K.K.

IPC分类号： H05H1/18 ,  H05H1/46 ,  H01S3/097

CPC分类号： H01J37/32192 ,  H01J37/32339 ,  H01S3/0315 ,  H01S3/0975 ,  H05H1/46

摘要： The invention relates to a plasma apparatus where plasma is generated utilizing microwave discharge and laser excitation is performed and plasma processing is performed. More specifically, in a plasma apparatus where microwave from a microwave oscillator (1) is transmitted through a microwave transmission path (2) to a microwave circuit (6), and plasma is generated by microwave discharge within the microwave circuit, a plasma generating medium for generating the plasma is filled in a space formed between the conductor wall to constitute a part of the microwave circuit and dielectrics installed opposite to the conductor wall, and the microwave circuit forms microwave mode having the electric field component orthogonal to the boundary between the dielectrics and the plasma.

摘要翻译： 本发明涉及一种使用微波放电产生等离子体并进行激光激发并进行等离子体处理的等离子体装置。 更具体地，在微波振荡器（1）的微波通过微波传输路径（2）传输到微波电路（6）的等离子体装置中，通过微波电路内的微波放电产生等离子体，等离子体产生介质 为了产生等离子体，填充在形成在导体壁之间的空间中，以构成微波电路的一部分和与导体壁相对安装的电介质，并且微波电路形成具有与电介质之间的边界正交的电场分量的微波模式 和等离子体。

公开(公告)号：EP2401232A4

公开(公告)日：2015-04-01

申请号：EP10746778

申请日：2010-02-24

申请人： UNIV VIRGINIA PATENT FOUND ,  FRAUNHOFER GES ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E V

发明人： WADLEY HAYDN N G ,  MATTAUSCH GOESTA ,  MORGNER HENRY ,  ROEGNER FRANK-HOLM

IPC分类号： C01B33/12 ,  C23C16/513 ,  H01J37/305 ,  H01J37/32 ,  H01J37/34 ,  H05H1/24

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.