公开(公告)号：EP1439571B1

公开(公告)日：2016-09-14

申请号：EP02775374.8

申请日：2002-10-18

申请人： Goto, Naohisa ,  Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： GOTO, Naohisa ,  OHMI, Tadahiro ,  HIRAYAMA, Masaki ,  GOTO, Tetsuya

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192

公开(公告)号：EP1126347B1

公开(公告)日：2007-09-12

申请号：EP00948265.4

申请日：2000-07-27

申请人： TOKYO ELECTRON LIMITED ,  FUJIKIN INCORPORATED ,  Ohmi, Tadahiro ,  Iida, Seiichi

发明人： OHMI, Tadahiro ,  IIDA, Seiichi ,  KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. ,  HIROSE, Jun, Tokyo Electron Yamanashi Ltd. ,  FUKASAWA, Kazuo, Tokyo Electron Yamanashi Ltd. ,  KOIZUMI, Hiroshi, Tokyo Electron Yamanashi Ltd. ,  NAGAOKA, Hideki, Tokyo Electron Yamanashi Ltd. ,  UNO, Tomio, Fujikin Incorporated ,  NISHINO, Kouji, Fujikin Incorporated ,  IKEDA, Nobukazu, Fujikin Incorporated ,  DOHI, Ryousuke, Fujikin Incorporated ,  IDETA, Eiji, Fujikin Incorporated

IPC分类号： G05B23/02 ,  F16K17/22 ,  G05D7/06 ,  G01D21/00

CPC分类号： G05B23/0235 ,  G05B23/0256 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： A method for detecting abnormal flow rate by easily detecting an obstruction of an orifice while a fluid pressure flow rate controller using an orifice is controlling the flow rate. The method uses a flow rate controller (FCS) so as to calculate the flow rate Qc on the downstream side when the upstream-side pressure P1 is maintained at a value about twice or more the downstream-side pressure P2 from Qc=KP1 (K: constant) and to control the operation of a control valve (CV) according to a signal Qy representing the difference between the calculated flow rate Qc and a preset flow rate Qs. A testing circuit or flow rate setting circuit provided separately outputs a testing signal ΔQs having a testing amplitude V0 to the control valve (CV). The pressure amplitude V of a pressure variation ΔP1 of the upstream-side pressure P1 occurring in response to the opening/closing of the control valve (CV) is measured. When the pressure amplitude V decreases below a limit amplitude Vt, the obstruction of the orifice is announced, thus implementing the method. If the testing signal ΔQs is superimposed on a steady-state preset flow rate signal Qs0 and outputted together from the testing circuit or the flow rate setting circuit to the control valve (CV), an abnormal flow rate can be detected while controlling the flow rate by using the steady-state preset flow rate signal Qs0.

公开(公告)号：EP1681715A1

公开(公告)日：2006-07-19

申请号：EP04818177.0

申请日：2004-11-02

申请人： OHMI, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  NOZAWA, Toshihisa, c/o TOKYO ELECTRON AT LIMITED ,  MORITA, Osamu, c/o TOKYO ELECTRON AT LIMITED ,  YUASA, Tamaki, c/o TOKYO ELECTRON AT LIMITED ,  KOTANI, Koji, c/o TOKYO ELECTRON AT LIMITED

IPC分类号： H01L21/31 ,  H01L21/3065

CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

摘要： The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part.
Therefore, used in the present invention is a plasma processor having a processing vessel having a holder holding a substrate to be processed, a microwave antenna provided on the processing vessel so as to oppose the substrate to be processed, and a processing gas supply part provided between the substrate to be processed on the holder and the microwave antenna so as to oppose the substrate to be processed, characterized in that the process gas supply part has multiple first openings through which plasma formed in the processing vessel passes, a process gas channel connectable to a process gas source, multiple second openings communicating with the process gas channel, and a cooling medium channel through which a cooling medium cooling the process gas supply part flows, wherein the cooling medium includes mist.

摘要翻译： 本发明的目的在于提高等离子体处理装置的处理气体供给部的冷却效率，抑制处理气体供给部的温度上升。 因此，本发明中使用的是具有处理容器的等离子体处理装置，该处理容器具有：保持被处理基板的保持架;以与处理对象基板相对的方式设置在处理容器上的微波天线;设置处理气体供给部 在所述支架上的被加工基板与所述微波天线之间，与所述被处理基板相对，其特征在于，所述处理气体供给部具有多个供所述处理容器内形成的等离子体通过的第一开口部，能够连接处理气体流路 其特征在于，在处理气体源具有与所述处理气体流路连通的多个第二开口以及冷却所述处理气体供给部的冷却介质流动的冷却介质流路，所述冷却介质包含雾。

公开(公告)号：EP1300878B1

公开(公告)日：2006-03-08

申请号：EP02708714.7

申请日：2002-03-28

申请人： OHMI, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  HIRAYAMA, M., c/o N.I.C.H.C Tohoku University, ,  SUGAWA, S., Tohoku University, ,  GOTO, T., c/o N.I.C.H.C. c/o Tohoku University,

IPC分类号： H01L21/31 ,  H05H1/46 ,  H01L21/3065

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： A micro wave plasma processing device using a radial line slot antenna, wherein a slot plate (16) is formed with a material having a coefficient of thermal expansion near the coefficient of thermal expansion of a slow-wave plate (18) or by depositing a metal on a dielectric plate forming the slow-wave plate (18), and an adhesion between the slow-wave plate and the slot plate forming a micro wave radiation surface in the antenna is increased to prevent an abnormal discharge.

公开(公告)号：EP1376668A1

公开(公告)日：2004-01-02

申请号：EP02707230.5

申请日：2002-03-28

申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, M. DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  SUGAWA, S. DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  GOTO, T. DEPT. OF ELECTRONIC ENGIN. GRADUATE

IPC分类号： H01L21/31 ,  H01L21/205 ,  B01J19/08 ,  C23C16/511 ,  H01L21/265 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing. In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

公开(公告)号：EP1300875A1

公开(公告)日：2003-04-09

申请号：EP02707228.9

申请日：2002-03-28

申请人： Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  HIRAYAMA,Masaki c/o N.I.C.H.C. Tohoku Univ., ,  SUGAWA, Shigetoshi, Tohoku University ,  GOTO,T, c/o N.I.C.H.C. Tohoku University, ,  HONGOH, Toshiaki, Tokyo Electron Limited

IPC分类号： H01L21/31 ,  H05H1/46 ,  H01L21/3065

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, abnormal discharges are suppressed and the excitation efficiency of microwave plasma is improved simultaneously. In the joint between the radial line slot antenna and the coaxial waveguide, the point part of the power supplying line of the coaxial waveguide is separated from the slot plate constructing a radiation face.

摘要翻译： 在使用径向线槽天线的微波等离子体处理装置中，抑制异常放电，同时提高微波等离子体的激发效率。 在径向线槽天线和同轴波导之间的接头中，同轴波导的供电线的点部分与构成辐射面的槽板分离。

公开(公告)号：EP1126347A1

公开(公告)日：2001-08-22

申请号：EP00948265.4

申请日：2000-07-27

申请人： TOKYO ELECTRON LIMITED ,  Fujikin Incorporated ,  Ohmi, Tadahiro ,  Iida, Seiichi

发明人： OHMI, Tadahiro ,  IIDA, Seiichi ,  KAGATSUME, Satoshi, Tokyo Electron Yamanashi Ltd. ,  HIROSE, Jun, Tokyo Electron Yamanashi Ltd. ,  FUKASAWA, Kazuo, Tokyo Electron Yamanashi Ltd. ,  KOIZUMI, Hiroshi, Tokyo Electron Yamanashi Ltd. ,  NAGAOKA, Hideki, Tokyo Electron Yamanashi Ltd. ,  UNO, Tomio, Fujikin Incorporated ,  NISHINO, Kouji, Fujikin Incorporated ,  IKEDA, Nobukazu, Fujikin Incorporated ,  DOHI, Ryousuke, Fujikin Incorporated ,  IDETA, Eiji, Fujikin Incorporated

IPC分类号： G05B23/02 ,  F16K17/22 ,  G05D7/06 ,  G01D21/00

CPC分类号： G05B23/0235 ,  G05B23/0256 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： A method checks the flow rate for abnormalities while controlling the flow rate of fluid in a pressure-type flow controller FCS using an orifice - the pressure-type flow controller wherein with the upstream pressure P 1 maintained about two or more times higher than the downstream pressure P 2 , the downstream flow rate Q C is calculated by the equation Q C = KP 1 (K: constant) and wherein the control valve CV is controlled on the basis of the difference signal Q Y between the calculated flow rate Q C and the set flow rate Q S . The method comprises, outputting a testing signal ΔQs having a testing amplitude Vo from a testing circuit provided separately or a flow rate setting circuit to the control valve CV, measuring the pressure amplitude V of the variable pressure ΔP1 of the pressure P1 on the upstream side of the orifice that arises in response to actuation of the control valve CV and setting off an alarm for the clogging of the orifice when the pressure amplitude V is smaller than a limit amplitude Vt. If the testing signal ΔQs is superimposed on a steady-state set flow rate signal Qso and outputted to control the valve CV from the testing circuit or the flow rate setting circuit, the flow rate can be checked for abnormalities while controlling the flow rate by the steady-state set flow rate signal Qso.

摘要翻译： 一种方法，检查异常的流速，同时控制在使用于节流孔的压力式流量控制装置FCS的流体的流量 - 压力式流量控制装置worin与上游压力P1保持为下游压力高大约两倍或更多倍 和worin控制阀CV为计算流量QC与设定流量QS之差信号QY的基础上进行控制：P2，下游流量QC由等式QC = KP1（常数K）计算得出。 该方法包括，输出开始一测试信号DELTA Qs的具有从测试电路分开设置的测试振幅VO或流量设定电路向控制阀CV，测量在可变压力DELTA P1的压力P1的压力振幅V 节流孔的上游侧确实产生于响应于控制阀CV的致动和用于节流孔堵塞报警掀起当压力振幅V小于极限振幅Vt的小。 如果测试信号DELTA Qs被叠加在稳态流量设定信号QSO和输出，以控制从所述测试电路或流量设定电路的阀CV，流速可以检查异常，同时控制由流量 稳态设定流量信号QSO。

公开(公告)号：EP0931941A1

公开(公告)日：1999-07-28

申请号：EP98937820.3

申请日：1998-08-13

申请人： Fujikin Inc. ,  TOKYO ELECTRON LIMITED ,  OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KAGAZUME, Tetu-Tokyo Electron Yamanashi Ltd. ,  SUGIYAMA, Kazuhiko-Tokyo Electron Yamanashi Ltd. ,  FUKADA, Osamu-Kabushiki-Kaisha Fujikin ,  OZAWA, Susumu-Kabushiki-Kaisha Fujikin ,  SATOU, Yoshihiro-Kabushiki-Kaisha Fujikin ,  DOHI, Ryousuke-Kabushiki-Kaisha Fujikin ,  UNO, Tomio-Kabushiki-Kaisha Fujikin ,  NISHINO, Kouji-Kabushiki-Kaisha Fujikin ,  FUKUDA, Hiroyuki-Kabushiki-Kaisha Fujikin ,  IKEDA, Nobukazu-Kabushiki-Kaisha Fujikin ,  YAMAJI, Michio-Kabushiki-Kaisha Fujikin

IPC分类号： F15D1/08 ,  B23P15/16

CPC分类号： G01F1/40 ,  G05D7/0186

摘要： An orifice for use in pressure type flow rate control unit which can be manufactured easily and inexpensively, and which has a linear relationship between pressure P 1 upstream of the orifice and the flow rate over a wide range of pressure ratio P 2 /P 1 (where P 1 is the pressure upstream of the orifice and P 2 is the pressure downstream of same), with the flow rate characteristic relationship among a plurality of orifices being easily adjustable. More specifically, the orifice has a structure comprising a tapered inlet section (1) wherein one open end of a bottom hole (6) bored into a main body member (D) is cut into a shape like the mouthpiece of a trumpet, and a short drawn parallel part (2) continuing therefrom; and a short expanded tapered section (3) formed by expanding the diameter of the other open end of the bottom hole (6) and continuing from the drawn parallel part (2), and an expanded parallel part (4) continuing therefrom.

摘要翻译： 用于压力式流量控制单元的孔口，其可以容易且廉价地制造，并且在孔口上游的压力P1和压力比P2 / P1的宽范围（P1为P1）之间具有线性关系 孔口上游的压力和P2是其下游的压力），多个孔口之间的流量特性关系容易调节。 更具体地，孔口具有包括锥形入口部分（1）的结构，其中钻入主体部件（D）中的底部孔（6）的一个开口端被切割成类似于喇叭口部的形状，并且 短延伸平行部分（2）; 以及通过使所述底孔（6）的另一开口端的直径扩大并从所述拉伸平行部分（2）延伸而形成的短的膨胀锥形部分（3）以及从其延伸的扩展的平行部分（4）。

公开(公告)号：EP1630858B1

公开(公告)日：2012-02-15

申请号：EP04717277.0

申请日：2004-03-04

申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  TERAMOTO, Akinobu

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02052 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67173

摘要： With the present invention, water adhered to a substrate during cleaning process is completely removed and the water-free substrate is conveyed to a film-forming apparatus. A substrate processing system (1) comprises a cleaning apparatus (3) for cleaning a substrate with a cleaning liquid, a water removing apparatus (4) for removing water adhering to the substrate which has been cleaned by the cleaning apparatus (3), and a conveyance portion (7) for carrying the substrate, from which water has been removed by the water removing apparatus (4), through a drying atmosphere to another processing apparatus.

摘要翻译： 通过本发明，在清洁过程中附着在基材上的水被完全除去，并且将无水基材传送到成膜装置。 基板处理系统（1）包括用清洁液清洁基板的清洁装置（3），用于去除附着在已被清洁装置（3）清洁过的基板上的水的除水装置（4），以及 用于将通过除水装置（4）除去了水的基板通过干燥气氛输送到另一处理装置的输送部（7）。

公开(公告)号：EP1376668B1

公开(公告)日：2007-08-22

申请号：EP02707230.5

申请日：2002-03-28

申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, Masaki DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  SUGAWA, Shigetoshi DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  GOTO, Tetsuya DEPT. OF ELECTRONIC ENGIN. GRADUATE

IPC分类号： H01L21/31 ,  H01L21/205 ,  B01J19/08 ,  C23C16/511 ,  H01L21/265 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma process device (10) is provided with a plasma ignition enhancing means for enhancing plasma ignition by microwaves. The plasma ignition enhancing means comprises a deuterium lamp (30) which generates vacuum ultraviolet rays, and a penetration window (32) guiding the vacuum ultraviolet rays, which have penetrated the same, to a plasma excitation space (26). The penetration window (32) is constructed as a convex lens, focusing the vacuum ultraviolet rays to enhance the ionization of the plasma excitation gas. Such arrangement makes it possible to effect plasma ignition easily and rapidly.