公开(公告)号：EP2879166A4

公开(公告)日：2016-03-16

申请号：EP13833486

申请日：2013-08-07

申请人： TOKYO ELECTRON LTD

发明人： HARADA AKITOSHI

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H05H1/46

CPC分类号： H01J37/3244 ,  C23F4/00 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31144

摘要： A plasma processing method performs an etching process (S101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S102) of supplying an O 2 gas into the plasma processing space and removing, with plasma of the O 2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S103) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.

公开(公告)号：EP2879167A4

公开(公告)日：2016-03-09

申请号：EP13834069

申请日：2013-08-27

申请人： TOKYO ELECTRON LTD

发明人： HARADA AKITOSHI ,  LIN YEN-TING ,  CHEN CHIH-HSUAN ,  HSIEH JU-CHIA ,  YONEDA SHIGERU

IPC分类号： H01L21/3065 ,  H01L21/28 ,  H01L21/768

CPC分类号： H01L21/76805 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/321 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66575 ,  H01L29/78

摘要： A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S102). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S103).