POLISHING PAD
    1.
    发明公开
    POLISHING PAD 有权
    抛光垫上,

    公开(公告)号:EP1108500A4

    公开(公告)日:2002-08-07

    申请号:EP99940476

    申请日:1999-08-25

    CPC classification number: B24B37/24 B24D3/28

    Abstract: A polishing pad, characterized by having a micro-rubber. A hardness number of 80 or larger, closed cells with an average cell diameter of not larger than 1000 νm and a density ranging from 0.4 to 1.1 and containing a polymer polymerized from polyurethane and a vinyl compound, the polishing pad having a high finishing rate, being small in global step difference and not likely to cause metal wire dishing, loading and permanent set in fatigue at a front layer portion and providing a stable finishing rate when a localized unevenness on a semiconductor substrate is to be flattened.

    POLISHING PAD AND POLISHING DEVICE
    3.
    发明公开
    POLISHING PAD AND POLISHING DEVICE 有权
    抛光垫上,抛光设备

    公开(公告)号:EP1138438A4

    公开(公告)日:2002-08-07

    申请号:EP99954409

    申请日:1999-11-05

    CPC classification number: B24B37/24 Y10S438/959

    Abstract: A polishing pad characterized by comprising a polishing layer having a micro-rubber A hardness of at least 80 degrees and a cushion layer having a bulk modulus of at least 40 Mpa and a tensile elastic modulus of at least 0.1 Mpa and up to 20 Mpa; and a polishing device characterized in that a semiconductor substrate is fixed to a polishing head, the above polishing pad is fixed to a polishing surface plate with the polishing layer facing the semiconductor substrate, and one or both of the polishing head and the polishing surface plate are rotated to polish the semiconductor substrate. A polishing device or a polishing pad used in a mechanical flattening process for smoothing by polishing an insulation layer formed on a semiconductor substrate or the surface of a metal wiring, wherein technologies are provided for uniformly flattening the entire surface of a semiconductor substrate and polishing it uniformly up to a portion close to a wafer edge and for making uniformity and flatness compatible with each other at a high platen rotation speed.

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