公开(公告)号：EP1719136A1

公开(公告)日：2006-11-08

申请号：EP05710941.5

申请日：2005-02-07

申请人： Thin Film Electronics ASA

发明人： KARLSSON, Christer ,  HAMBERG, Per ,  BJÖRKLID, Staffan ,  THOMPSON, Michael, O. ,  WOMACK, Richard

IPC分类号： G11C11/22 ,  G11C8/18 ,  G11C16/34

CPC分类号： G11C11/22

摘要： In a method for operating a passive matrix-addessable ferroelectric or electret memory device comprising memory cells in the form of a ferroelectric or electret thin-film polarizable memory material exhibiting hysteresis, particularly a ferroelectric or electret polymer thin film, and a first set of parallel electrodes forming word line electrodes in the device and a second set of parallel electrodes forming bit lines in the device, the word lines being oriented orthogonally to the bit lines, such that the word lines and bit lines are in direct contact with the memory cells, which can be set to either of two polarization states or switched between these by applying a switching voltage larger than a coercive voltage of the memory material between a word line and a bit line, a voltage pulse protocol with at least one disturb generating operation cycle is applied for switching selected addressed cells to determined polarization state. The voltage pulse protocol further comprises a pre-disturb and/or post-disturb cycle before and after the disturb generating operation cycle respectively in order to minimize the effect of disturb voltages on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when it is applied for either a write or read operation.

公开(公告)号：EP1891583B1

公开(公告)日：2011-09-21

申请号：EP06747668.9

申请日：2006-06-08

申请人： Thin Film Electronics ASA

发明人： BRÖMS, Per ,  KARLSSON, Christer ,  LEISTAD, Geirr, I. ,  GUDESEN, Hans Gude ,  HAMBERG. Per ,  BJÖRKLID, Staffan ,  CARLSSON, Johan ,  GUSTAFSSON, Göran

IPC分类号： G06K19/067 ,  G06K1/12 ,  G06K7/06 ,  G06K19/06 ,  G06K7/08 ,  G11B9/00 ,  G11C11/22

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

公开(公告)号：EP1891583A1

公开(公告)日：2008-02-27

申请号：EP06747668.9

申请日：2006-06-08

申请人： Thin Film Electronics ASA

发明人： BRÖMS, Per ,  KARLSSON, Christer ,  LEISTAD, Geirr, I. ,  GUDESEN, Hans Gude ,  HAMBERG. Per ,  BJÖRKLID, Staffan ,  CARLSSON, Johan ,  GUSTAFSSON, Göran

IPC分类号： G06K19/067 ,  G06K1/12 ,  G06K7/06 ,  G06K19/06 ,  G06K7/08

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，存储器单元和读/写单元被设置为物理上分离的单元。 存储器单元基于存储器材料，该存储器材料可以通过在存储器材料上施加电场而被设置为至少两个不同的物理状态。 电极装置和/或接触装置或者设置在存储单元中或者设置在读/写单元中，并且接触装置至少总是设置在读/写单元中。 电极和触点以几何布置提供，其在存储层中几何限定一个或多个存储单元。 读/写单元中的接触装置被提供为可连接到位于读/写单元中或与其连接的外部装置中的驱动，感测和控制装置。 在存储器单元和读取/写入单元之间建立物理接触关闭所寻址的存储器单元上的电路，使得可以实现读取，写入或擦除操作。 存储器单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可辨别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定 通过施加电场的电阻值。