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    P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT
    2.
    发明公开
    P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
    磷酸三钠氮磷钾的P-TYP-GRUPPE-III-NITRIDHALBLEITER

    公开(公告)号：EP2131403A1

    公开(公告)日：2009-12-09

    申请号：EP08738700.7

    申请日：2008-03-21

    申请人： Tokuyama Corporation

    发明人： KINOSHITA, Toru ,  YANAGI, Hiroyuki ,  TAKADA, Kazuya

    IPC分类号： H01L33/00 ,  H01S5/323

    CPC分类号： H01L33/025 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

    摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by Al X Ga Y In Z N in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if A1 content is as high as 1.0>X≥0.5. It is achieved that a proportion of a hole concentration at 30°C to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×10 18 to 1×10 20 cm -3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.

    摘要翻译： 本发明提供一种p型III族氮化物半导体，具有良好的p型性质，具有由Al X Ga Y In ZN表示的组成，其中X，Y和Z各自表示满足X + Y的关系的有理数 + Z = 1.0，即使A1含量高达1.0> X‰¥0.5。 实现本发明的p型III族氮化物半导体中30℃下的受主杂质原子浓度的空穴浓度的比例为0.001以上，通过以5×的浓度掺杂Mg等受主杂质原子 10 18〜1×10 20 cm -3的方法，例如MOCVD，注意不要引入除受体杂质原子以外的杂质原子，或者在制造由III族氮化物半导体表示的III族氮化物半导体时，在晶体中形成位错 以上组成。

    METHOD FOR PRODUCING LAMINATE
    3.
    发明公开
    METHOD FOR PRODUCING LAMINATE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LAMINATS

    公开(公告)号：EP2500451A1

    公开(公告)日：2012-09-19

    申请号：EP10829927.2

    申请日：2010-11-09

    申请人： Tokuyama Corporation

    发明人： KINOSHITA, Toru ,  TAKADA, Kazuya

    IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/18 ,  H01L21/205

    CPC分类号： H01L21/0262 ,  C30B25/16 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02658

    摘要： Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5 × 10 20 cm -3 or more but 5 × 10 21 cm -3 or less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying the oxygen source thereto, or alternatively by supplying the oxygen source, together with the starting material gas, at a lower supply rate than that in the first growth step.

    摘要翻译： 公开了蓝宝石衬底上III族极性生长的新方法。 具体公开了通过MOCVD法在蓝宝石基板上层叠III族氮化物单晶层的层叠体的制造方法。 制造层压体的方法包括：将氧源气体供给到蓝宝石基板上的预处理工序; 第一生长步骤，其中生长浓度为5×10 20 cm -3以上但5×10 21 cm -3以下的氧的初始单晶层，其厚度为3nm以上且小于 通过将氧源气体与用于生长III族氮化物的原料气体一起供应到蓝宝石衬底上15nm; 以及第二生长步骤，其中与初始单晶层相比，氧浓度降低的III族氮化物单晶层通过将原料气体供给到初始单晶层而不向其供应氧而生长， 或者通过以比第一生长步骤中低的供应速率与原料气体一起供应氧源。

    METHOD FOR PRODUCTION OF LAMINATE
    4.
    发明公开
    METHOD FOR PRODUCTION OF LAMINATE 有权
    生产层压板的方法

    公开(公告)号：EP2484816A1

    公开(公告)日：2012-08-08

    申请号：EP10818921.8

    申请日：2010-09-28

    申请人： Tokuyama Corporation

    发明人： KINOSHITA, Toru ,  TAKADA, Kazuya

    IPC分类号： C30B29/38 ,  C23C16/34 ,  H01L21/205 ,  H01L33/32

    CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Disclosed is a novel Group III polar growth method on a sapphire substrate. Specifically disclosed is a method for producing a laminate which comprises a sapphire substrate and a single crystal layer comprising a high-Al-Content nitride of a Group III element and laminated on the sapphire substrate, through an organic metal gas phase growth process. The method comprises: a first growth step of supplying a raw material gas for growing single crystals of the nitride of the Group III element and an oxygen source gas onto the sapphire substrate to grow an initial single crystal layer having an oxygen concentration of 1 x 10 20 to 5 x 10 21 cm -3 inclusive into a thickness of 15 to 40 nm inclusive; and a second growth step of supplying the raw materials gas onto the initial single crystal layer without supplying the oxygen source gas or supplying the oxygen source gas in an amount smaller than that supplied in the first growth step together with the raw material gas thereby growing a second Group III nitride single crystal layer having an oxygen Concentration smaller than that in the initial single crystal layer.

    摘要翻译： 公开了一种在蓝宝石衬底上的新型III族极性生长方法。 具体而言，公开了通过有机金属气相生长工艺制造包括蓝宝石衬底和包含III族元素的高Al含量氮化物并层叠在蓝宝石衬底上的单晶层的层压体的方法。 该方法包括：第一生长步骤，将用于生长III族元素氮化物的单晶和氧源气体的原料气提供到蓝宝石衬底上，以生长氧浓度为1×1020的初始单晶层 至5×1021cm-3，包括15至40nm的厚度; 以及第二生长步骤，将原料气体供应到初始单晶层上而不供应氧源气体或者将与第一生长步骤中供应的量不同的量的氧源气体与原料气一起供应，由此生长 第二III族氮化物单晶层的氧浓度小于初始单晶层中的氧浓度。

    METHOD FOR MANUFACTURING OPTICAL ELEMENT
    8.
    发明公开
    METHOD FOR MANUFACTURING OPTICAL ELEMENT 审中-公开
    制造光学元件的方法

    公开(公告)号：EP2634294A1

    公开(公告)日：2013-09-04

    申请号：EP11836064.3

    申请日：2011-10-17

    申请人： Tokuyama Corporation

    发明人： KINOSHITA, Toru ,  TAKADA, Kazuya

    IPC分类号： C30B29/38 ,  C23C16/01 ,  C23C16/34 ,  C30B25/20 ,  H01L21/205 ,  H01L33/32

    CPC分类号： H01L33/32 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075 ,  H01L33/0079

    摘要： Disclosed is a method for manufacturing an optical element (22), which includes a step wherein an aluminum nitride single crystal layer (12) is formed on an aluminum nitride seed substrate (11) having an aluminum nitride single crystal surface (11 a) as the topmost surface, a laminated body (2) for an optical element is manufactured by forming an optical element layer (20) on the aluminum nitride single crystal layer (12), and the aluminum nitride seed substrate (11) is removed from the laminated body (2). With the method of the present invention, an optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance, and furthermore, a low dislocation density is provided.

    摘要翻译： 公开了一种光学元件（22）的制造方法，其包括在具有氮化铝单晶表面（11a）的氮化铝晶种基板（11）上形成氮化铝单晶层（12）的步骤， 通过在氮化铝单晶层（12）上形成光学元件层（20）来制造用于光学元件的最上表面，层压体（2），并且将氮化铝种子基板（11）从层压体 身体（2）。 根据本发明的方法，提供了具有紫外线透射率高，且位错密度低的氮化铝单晶层作为基板的光学元件。