公开(公告)号：EP4254517A1

公开(公告)日：2023-10-04

申请号：EP22908852.1

申请日：2022-07-27

申请人： Tongwei Solar (Meishan) Co., Ltd.

发明人： ZHANG, Ming ,  MENG, Xiajie ,  XU, Wenzhou ,  CHEN, Hao ,  DENG, Mingzhang ,  XING, Guoqiang ,  YAO, Qian

IPC分类号： H01L31/18 ,  H01L21/02 ,  H01L31/0216 ,  H01L31/068 ,  C23C16/40

摘要： A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided, which are relate to the field of crystalline silicon solar cells. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer. A SiO x layer obtained by the above method can be continuous and dense, and have a fast growth rate, an excellent impurity absorption effect and an excellent blocking effect. Moreover, a thickness of the SiO x layer can be accurate and controllable, and the SiO x layer has pinholes with a high density and a large size after high temperature annealing.