公开(公告)号：EP1947081B1

公开(公告)日：2010-01-20

申请号：EP06822809.7

申请日：2006-11-01

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C23C16/34 ,  C07F7/28

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

公开(公告)号：EP1852438A1

公开(公告)日：2007-11-07

申请号：EP06712311.7

申请日：2006-01-25

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： SEKIMOTO, Kenichi ,  TADA, Ken-ichi c/o SAGAMI CHEMICAL RESEARCH CENTER ,  TAKAMORI, Mayumi ,  YAMAKAWA, Tetsu c/o SAGAMI CHEMICAL RESEARCH CENTER ,  FURUKAWA, Taishi ,  OSHIMA, Noriaki

IPC分类号： C07F9/00 ,  C07F17/00 ,  C23C16/30

CPC分类号： C23C16/18 ,  C07F17/00

摘要： Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.
The present invention relates to a tantalum compound represented by the following formula (1)

(In the formula, R 1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms),
or a tantalum compound represented by the general formula (2)


(In the formula, R 2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.
The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6)

(In the formula, j, k, m and n is an integer of from 1 to 4 satisfying j+k=5 and m+n=5, and R 3 to R 6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like)
as a raw material.

摘要翻译： 本发明的目的是提供一种新型钽化合物这使得能够选择性地形成一个不含卤素和类似物，和各种薄膜含钽含钽薄膜而含有所需的元件，以及用于制造其的方法 和进一步提供稳定地形成含钽薄膜包含所需元件的方法。 本发明涉及由下式表示的钽化合物（1）（在式中，R 1表示具有2至6个碳原子的直链烷基）（或由通式表示的钽化合物2 ）（式中，R 2 darstellt具有2至6个碳原子的直链烷基），和用于生产其的方法。 本发明还涉及通过使用由以下通式（6）表示的钽化合物（在该式中，J，K，M，以形成含钽薄膜和n是从1至4满足J +的整数 K = 5且m + n = 5，且R 3至R 6表示氢原子，在具有从1至6个碳原子，等）作为原料的烷基。

公开(公告)号：EP1921061B1

公开(公告)日：2011-10-19

申请号：EP06781947.4

申请日：2006-07-28

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C257/12 ,  C07C257/14 ,  C23C16/40 ,  H01L21/312 ,  C07F5/00 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28

CPC分类号： H01L21/3141 ,  C07C257/14 ,  C07F5/003 ,  C07F5/069 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

摘要： A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q (3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)

公开(公告)号：EP1947081A1

公开(公告)日：2008-07-23

申请号：EP06822809.7

申请日：2006-11-01

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C23C16/34 ,  C07F7/28

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3).


        [Chem. 2]   Ti (NR 5 R 6 ) 4      (3)



(In the formulae, R 1 and R 4 represent an alkyl group having from 1 to 6 carbon atoms. R 2 and R 3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R 5 and R 6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).

摘要翻译： 本发明的目的是提供一种新颖的钛络合物确实具有良好的气化特性和优异的热稳定性，并成为原料用于形成由方法含钛薄膜：如CVD法或ALD法，它的生产方法， 含钛薄膜使用相同的形成，并且它的形成方法。 在本发明中，钛络合物由通式（1）是通过使由通式（2）和金属锂代表二亚胺反应，然后由通式tetrakisamide复杂产生（3）。 €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[化学式 2]€ƒ€ƒ€ƒTi（NR 5 R 6）4€ƒ€ƒ€ƒ€ƒ€ƒ（3）（式中，R 1和R 4表示在具有1至6个碳原子的烷基。 R 2和R 3各自独立地darstellt氢原子或烷基为1至3个碳原子。R 5和R 6具有各自独立地darstellt烷基具有1至4个碳原子具有基团。）。

公开(公告)号：EP2058295B1

公开(公告)日：2012-12-05

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

公开(公告)号：EP2058295A1

公开(公告)日：2009-05-13

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M 1 (NR 1 )X 3 (L) r (2) and an alkali metal alkoxide (3):

(wherein M 1 represents niobium atom or tantalum atom, R 1 represents an alkyl group having from 1 to 12 carbon atoms, R 2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M 2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

摘要翻译： 本发明的目的是提供一种具有良好蒸气压和成为原料用于生产铌或薄膜通过如下方法含钽的新颖铌或钽络合物：如CVD法，ALD法等，一种方法 其制造，含金属的薄膜使用相同的，和用于生产其的方法。 本发明涉及一种在由通式酰亚胺络合物的制造（1）由，例如，（NR 1）X 3（L）M 1之间的反应R（2）和碱金属醇盐（3）组成：（ worin M 1个darstellt铌原子或钽原子，R 1个darstellt烷基具有1至12个碳原子，R 2 darstellt烷基具有2至13个碳原子基团基团，X darstellt卤素原子，r为1时，L是1 1,2-二甲氧基乙烷配位体，配位体r为2时，L是吡啶和M 2 darstellt到碱金属），并且通过使用酰亚胺络合物（1）作为原料的铌或含钽薄膜。

公开(公告)号：EP1921061A1

公开(公告)日：2008-05-14

申请号：EP06781947.4

申请日：2006-07-28

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C257/12 ,  C07C257/14 ,  C23C16/40 ,  H01L21/312 ,  C07F5/00 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28

CPC分类号： H01L21/3141 ,  C07C257/14 ,  C07F5/003 ,  C07F5/069 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

摘要： A compound having good thermal stability and appropriate vaporization characteristic as a raw material of CVD method or ALD method, its production method, a thin film formed using the compound as a raw material, and its formation method are provided.
A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) and a compound represented by the general formula (3), and a metal-containing thin film is formed using the same as a raw material.


        [Chem. 3] M p (NR 4 R 5 ) q      (3)

(In the formulae, M represents a Group 4 atom, an aluminum atom, a gallium atom or the like; n is 2 or 3 in some cases, R 1 and R 3 represent an alkyl group having from 1 to 6 carbon atoms, or the like; R 2 represents an alkyl group having from 1 to 6 carbon atoms, or the like; R 4 and R 5 represent an alkyl group having from 1 to 4 carbon atoms, or the like; X represents a hydrogen atom, a lithium atom or a sodium atom; p is 1 or 2 in some cases; and q is 4 or 6 in some cases).

摘要翻译： 提供了具有良好的热稳定性和适当的汽化特性作为CVD法或ALD法，它的生产方法，薄膜使用化合物作为原料形成，并且它的形成方法的原料的化合物。 由通式（1）表示的化合物是通过使由通式（2）表示的化合物和由通式（3）表示的化合物产生的，含金属的薄膜是使用同一个FORMED 剃刀。 €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[化学式 3]量m P（NR 4 R 5）●€ƒ€ƒ€ƒ€ƒ€ƒ（3）（式中式中，​​M表示第4族原子与铝原子，镓原子等; n是2 或3在一些情况下，R 1和R 3表示在具有1至6个碳原子，或类似的烷基; R 2 darstellt烷基具有1至6个碳原子，或类似基团; R 4和R 5 表示在具有1至4个碳原子，或类似的烷基; X表示氢原子，锂原子或钠原子，p是在某些情况下1或2;且q为4或6在某些情况下）。

公开(公告)号：EP2520690B1

公开(公告)日：2018-04-11

申请号：EP10840837.8

申请日：2010-11-29

申请人： Tosoh Corporation

发明人： MANIWA, Atsushi ,  OSHIMA, Noriaki ,  KAWANO, Kazuhisa ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki

IPC分类号： C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F15/00

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

公开(公告)号：EP3392259A1

公开(公告)日：2018-10-24

申请号：EP16875596.5

申请日：2016-12-12

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： KOISO, Naoyuki ,  YAMAMOTO, Yuki ,  OIKE, Hiroyuki ,  HAYAKAWA, Teppei ,  FURUKAWA, Taishi ,  TADA, Ken-ichi

IPC分类号： C07F19/00 ,  C07F15/06 ,  C07F17/00 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285

CPC分类号： C07F17/02 ,  C07F15/06 ,  C07F17/00 ,  C07F19/00 ,  C23C16/18 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/28 ,  H01L21/28097 ,  H01L21/285 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76889 ,  H01L23/53238 ,  H01L29/456 ,  H01L29/4975

摘要： Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R 1 represents a silyloxy group represented by general formula (2) (wherein R 6 , R 7 and R 8 independently represent an alkyl group having 1 to 6 carbon atoms); R 2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R 3 , R 4 and R 5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

公开(公告)号：EP3882234A1

公开(公告)日：2021-09-22

申请号：EP19884650.3

申请日：2019-11-08

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： OIKE, Hiroyuki ,  HAYAKAWA, Teppei ,  YAMAMOTO, Yuki ,  FURUKAWA, Taishi ,  TADA, Ken-ichi

IPC分类号： C07C251/12 ,  C07F15/06 ,  C07F19/00 ,  C07C49/12 ,  C07F7/10 ,  C23C16/18

摘要： To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas. A cobalt complex represented by the following formula (1):

        L 1 -Co-L 2      (1)

wherein L 1 and L 2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):

wherein R 1 and R 2 represent a C 1-6 alkyl group or a tri(C 1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;

wherein R 3 represents a tri(C 1-6 alkyl)silyl group, R 4 and R 5 represent a C 1-4 alkyl group, and X represents a C 1-6 alkylene group;

wherein R 6 and R 8 represent a C 1-6 alkyl group, R 7 represents a hydrogen atom or a C 1-4 alkyl group, Y represents an oxygen atom or NR 9 , Z represents an oxygen atom or NR 10 , and R 9 and R 10 independently represent a C 1-6 alkyl group.