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    IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME
    2.
    发明公开
    IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME 有权
    IMIDKOMPLEX，方法ITS，金属薄膜和方法及其

    公开(公告)号：EP2058295A1

    公开(公告)日：2009-05-13

    申请号：EP07792748.1

    申请日：2007-08-20

    申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

    发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

    IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

    CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

    摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M 1 (NR 1 )X 3 (L) r (2) and an alkali metal alkoxide (3):

    (wherein M 1 represents niobium atom or tantalum atom, R 1 represents an alkyl group having from 1 to 12 carbon atoms, R 2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M 2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

    摘要翻译： 本发明的目的是提供一种具有良好蒸气压和成为原料用于生产铌或薄膜通过如下方法含钽的新颖铌或钽络合物：如CVD法，ALD法等，一种方法 其制造，含金属的薄膜使用相同的，和用于生产其的方法。 本发明涉及一种在由通式酰亚胺络合物的制造（1）由，例如，（NR 1）X 3（L）M 1之间的反应R（2）和碱金属醇盐（3）组成：（ worin M 1个darstellt铌原子或钽原子，R 1个darstellt烷基具有1至12个碳原子，R 2 darstellt烷基具有2至13个碳原子基团基团，X darstellt卤素原子，r为1时，L是1 1,2-二甲氧基乙烷配位体，配位体r为2时，L是吡啶和M 2 darstellt到碱金属），并且通过使用酰亚胺络合物（1）作为原料的铌或含钽薄膜。