公开(公告)号：EP1947081B1

公开(公告)日：2010-01-20

申请号：EP06822809.7

申请日：2006-11-01

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C23C16/34 ,  C07F7/28

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

公开(公告)号：EP1852438A1

公开(公告)日：2007-11-07

申请号：EP06712311.7

申请日：2006-01-25

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： SEKIMOTO, Kenichi ,  TADA, Ken-ichi c/o SAGAMI CHEMICAL RESEARCH CENTER ,  TAKAMORI, Mayumi ,  YAMAKAWA, Tetsu c/o SAGAMI CHEMICAL RESEARCH CENTER ,  FURUKAWA, Taishi ,  OSHIMA, Noriaki

IPC分类号： C07F9/00 ,  C07F17/00 ,  C23C16/30

CPC分类号： C23C16/18 ,  C07F17/00

摘要： Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.
The present invention relates to a tantalum compound represented by the following formula (1)

(In the formula, R 1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms),
or a tantalum compound represented by the general formula (2)


(In the formula, R 2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.
The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6)

(In the formula, j, k, m and n is an integer of from 1 to 4 satisfying j+k=5 and m+n=5, and R 3 to R 6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like)
as a raw material.

摘要翻译： 本发明的目的是提供一种新型钽化合物这使得能够选择性地形成一个不含卤素和类似物，和各种薄膜含钽含钽薄膜而含有所需的元件，以及用于制造其的方法 和进一步提供稳定地形成含钽薄膜包含所需元件的方法。 本发明涉及由下式表示的钽化合物（1）（在式中，R 1表示具有2至6个碳原子的直链烷基）（或由通式表示的钽化合物2 ）（式中，R 2 darstellt具有2至6个碳原子的直链烷基），和用于生产其的方法。 本发明还涉及通过使用由以下通式（6）表示的钽化合物（在该式中，J，K，M，以形成含钽薄膜和n是从1至4满足J +的整数 K = 5且m + n = 5，且R 3至R 6表示氢原子，在具有从1至6个碳原子，等）作为原料的烷基。

公开(公告)号：EP1657245A2

公开(公告)日：2006-05-17

申请号：EP04771757.4

申请日：2004-08-11

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： KAWANO, Kazuhisa ,  TAKAMORI, Mayumi ,  OSHIMA, Noriaki

IPC分类号： C07F17/00

CPC分类号： C07F17/02 ,  C23C16/18

摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-containing films using the organometallic compound are provided.
The organometallic iridium compound represented by the formula (1)

(example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4)

with a compound represented by the formula (2) or (3)


An iridium-containing film is prepared using the compound as a precursor.
In the formulae, R 1 represents hydrogen atom or a lower alkyl group; R 2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

摘要翻译： 提供了具有低的熔点，优异的汽化特性和低的膜形成温度上的底物，用于制造化合物的方法，以及使用该有机金属化合物制备的含铱膜的方法的有机金属铱化合物。 由式（1）（特定化合物（乙基环戊二烯基）双（乙烯）铱的例子）所示的有机金属铱化合物是通过使由下式表示的化合物（4）由下式表示的化合物（2）获得或 （3）一种含铱膜，使用该化合物作为前体来制备。 在化学式中，R 1个darstellt氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; 碱金属的和M darstellt。

公开(公告)号：EP1921061B1

公开(公告)日：2011-10-19

申请号：EP06781947.4

申请日：2006-07-28

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C257/12 ,  C07C257/14 ,  C23C16/40 ,  H01L21/312 ,  C07F5/00 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28

CPC分类号： H01L21/3141 ,  C07C257/14 ,  C07F5/003 ,  C07F5/069 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

摘要： A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q (3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)

公开(公告)号：EP1947081A1

公开(公告)日：2008-07-23

申请号：EP06822809.7

申请日：2006-11-01

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C23C16/34 ,  C07F7/28

CPC分类号： C23C16/18 ,  C07C211/65 ,  C07C251/08 ,  C07F7/006 ,  C23C16/34 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3).


        [Chem. 2]   Ti (NR 5 R 6 ) 4      (3)



(In the formulae, R 1 and R 4 represent an alkyl group having from 1 to 6 carbon atoms. R 2 and R 3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R 5 and R 6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).

摘要翻译： 本发明的目的是提供一种新颖的钛络合物确实具有良好的气化特性和优异的热稳定性，并成为原料用于形成由方法含钛薄膜：如CVD法或ALD法，它的生产方法， 含钛薄膜使用相同的形成，并且它的形成方法。 在本发明中，钛络合物由通式（1）是通过使由通式（2）和金属锂代表二亚胺反应，然后由通式tetrakisamide复杂产生（3）。 €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[化学式 2]€ƒ€ƒ€ƒTi（NR 5 R 6）4€ƒ€ƒ€ƒ€ƒ€ƒ（3）（式中，R 1和R 4表示在具有1至6个碳原子的烷基。 R 2和R 3各自独立地darstellt氢原子或烷基为1至3个碳原子。R 5和R 6具有各自独立地darstellt烷基具有1至4个碳原子具有基团。）。

公开(公告)号：EP2058295B1

公开(公告)日：2012-12-05

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

公开(公告)号：EP1657245B1

公开(公告)日：2012-07-25

申请号：EP04771757.4

申请日：2004-08-11

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： KAWANO, Kazuhisa ,  TAKAMORI, Mayumi ,  OSHIMA, Noriaki

IPC分类号： C07F17/00 ,  C23C16/18

CPC分类号： C07F17/02 ,  C23C16/18

摘要： An organometallic compound which has a low melting point and excellent vaporization characteristics and can deposit a film on substrates at low temperatures; and a process for producing an iridium-containing film from the organometallic compound. A compound represented by the general formula [2] or the general formula [3]: [2] [3] is reacted with a compound represented by the general formula [4]: [4] to obtain an organoiridium compound represented by the general formula [1]: [1] [In the formulae, R1 represents hydrogen or lower alkyl; R2 represents lower alkyl; X represents halogeno; and M represents an alkali metal.] This compound is used as a raw material to produce an iridium-containing film.

公开(公告)号：EP2058295A1

公开(公告)日：2009-05-13

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M 1 (NR 1 )X 3 (L) r (2) and an alkali metal alkoxide (3):

(wherein M 1 represents niobium atom or tantalum atom, R 1 represents an alkyl group having from 1 to 12 carbon atoms, R 2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M 2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

摘要翻译： 本发明的目的是提供一种具有良好蒸气压和成为原料用于生产铌或薄膜通过如下方法含钽的新颖铌或钽络合物：如CVD法，ALD法等，一种方法 其制造，含金属的薄膜使用相同的，和用于生产其的方法。 本发明涉及一种在由通式酰亚胺络合物的制造（1）由，例如，（NR 1）X 3（L）M 1之间的反应R（2）和碱金属醇盐（3）组成：（ worin M 1个darstellt铌原子或钽原子，R 1个darstellt烷基具有1至12个碳原子，R 2 darstellt烷基具有2至13个碳原子基团基团，X darstellt卤素原子，r为1时，L是1 1,2-二甲氧基乙烷配位体，配位体r为2时，L是吡啶和M 2 darstellt到碱金属），并且通过使用酰亚胺络合物（1）作为原料的铌或含钽薄膜。

公开(公告)号：EP1921061A1

公开(公告)日：2008-05-14

申请号：EP06781947.4

申请日：2006-07-28

申请人： TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  INABA, Koichiro ,  FURUKAWA, Taishi ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C257/12 ,  C07C257/14 ,  C23C16/40 ,  H01L21/312 ,  C07F5/00 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28

CPC分类号： H01L21/3141 ,  C07C257/14 ,  C07F5/003 ,  C07F5/069 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

摘要： A compound having good thermal stability and appropriate vaporization characteristic as a raw material of CVD method or ALD method, its production method, a thin film formed using the compound as a raw material, and its formation method are provided.
A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) and a compound represented by the general formula (3), and a metal-containing thin film is formed using the same as a raw material.


        [Chem. 3] M p (NR 4 R 5 ) q      (3)

(In the formulae, M represents a Group 4 atom, an aluminum atom, a gallium atom or the like; n is 2 or 3 in some cases, R 1 and R 3 represent an alkyl group having from 1 to 6 carbon atoms, or the like; R 2 represents an alkyl group having from 1 to 6 carbon atoms, or the like; R 4 and R 5 represent an alkyl group having from 1 to 4 carbon atoms, or the like; X represents a hydrogen atom, a lithium atom or a sodium atom; p is 1 or 2 in some cases; and q is 4 or 6 in some cases).

摘要翻译： 提供了具有良好的热稳定性和适当的汽化特性作为CVD法或ALD法，它的生产方法，薄膜使用化合物作为原料形成，并且它的形成方法的原料的化合物。 由通式（1）表示的化合物是通过使由通式（2）表示的化合物和由通式（3）表示的化合物产生的，含金属的薄膜是使用同一个FORMED 剃刀。 €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ[化学式 3]量m P（NR 4 R 5）●€ƒ€ƒ€ƒ€ƒ€ƒ（3）（式中式中，​​M表示第4族原子与铝原子，镓原子等; n是2 或3在一些情况下，R 1和R 3表示在具有1至6个碳原子，或类似的烷基; R 2 darstellt烷基具有1至6个碳原子，或类似基团; R 4和R 5 表示在具有1至4个碳原子，或类似的烷基; X表示氢原子，锂原子或钠原子，p是在某些情况下1或2;且q为4或6在某些情况下）。

公开(公告)号：EP2339594A1

公开(公告)日：2011-06-29

申请号：EP09822047.8

申请日：2009-10-21

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： YAMAKAWA, Tetsu ,  OSHIMA, Noriaki ,  KAWABATA, Takahiro ,  KINOSHITA, Tomoyuki ,  INASE, Toshio

IPC分类号： H01B13/00 ,  B22F9/00 ,  B22F9/20 ,  B22F9/24 ,  C23C18/08 ,  C23C18/16

CPC分类号： C23C18/08 ,  B22F9/24 ,  B22F2998/00 ,  H01B1/02 ,  H01B1/026 ,  B22F1/0018

摘要： To provide a composition with which a metal film can be directly produced from a high-valent metal compound, a method for producing a metal film, and a method for producing a metal powder.
Using a composition for production of a metal film of copper, silver or indium, which comprises a high-valent compound of copper, silver or indium, a linear, branched or cyclic C 1-18 alcohol and a Group VIII metal catalyst, a coating film is formed, followed by reduction by heating to produce a metal film of copper, silver or indium. Further, using metal particles of silver, copper of indium having a surface layer comprising a high-valent compound of copper, silver or indium, instead of the high-valent compound of copper, silver or indium, a metal film of copper, silver or indium is produced in the same manner as above.

摘要翻译： 为了提供具有电影可以由高价金属化合物，用于生产金属片的方法，以及用于制备金属粉末的方法直接生产的金属的组合物。 使用的组合物用于制造金属薄膜的铜，银或铟，其包括铜，银或铟，直链，支链或环状C 1-18醇以及VIII族的金属催化剂，涂层的高价化合物的 电影是通过加热产生金属膜的铜，银或铟形成的，然后还原。 此外，使用银的金属颗粒，具有表面层，包括铜，银或铟的高价化合物铟铜，代替铜，银或铟，铜金属膜的，银的高价化合物或 铟中相同的方式如上述制备。