公开(公告)号：EP2058295B1

公开(公告)日：2012-12-05

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

公开(公告)号：EP2058295A1

公开(公告)日：2009-05-13

申请号：EP07792748.1

申请日：2007-08-20

申请人： Tosoh Corporation ,  SAGAMI CHEMICAL RESEARCH CENTER

发明人： TADA, Ken-ichi ,  FURUKAWA, Taishi ,  INABA, Koichiro ,  YOTSUYA, Tadahiro ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki ,  YAMAKAWA, Tetsu ,  OSHIMA, Noriaki

IPC分类号： C07C211/65 ,  C01G33/00 ,  C01G35/00 ,  C07C209/00 ,  C23C16/18 ,  C07F9/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M 1 (NR 1 )X 3 (L) r (2) and an alkali metal alkoxide (3):

(wherein M 1 represents niobium atom or tantalum atom, R 1 represents an alkyl group having from 1 to 12 carbon atoms, R 2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M 2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

摘要翻译： 本发明的目的是提供一种具有良好蒸气压和成为原料用于生产铌或薄膜通过如下方法含钽的新颖铌或钽络合物：如CVD法，ALD法等，一种方法 其制造，含金属的薄膜使用相同的，和用于生产其的方法。 本发明涉及一种在由通式酰亚胺络合物的制造（1）由，例如，（NR 1）X 3（L）M 1之间的反应R（2）和碱金属醇盐（3）组成：（ worin M 1个darstellt铌原子或钽原子，R 1个darstellt烷基具有1至12个碳原子，R 2 darstellt烷基具有2至13个碳原子基团基团，X darstellt卤素原子，r为1时，L是1 1,2-二甲氧基乙烷配位体，配位体r为2时，L是吡啶和M 2 darstellt到碱金属），并且通过使用酰亚胺络合物（1）作为原料的铌或含钽薄膜。

公开(公告)号：EP2520690B1

公开(公告)日：2018-04-11

申请号：EP10840837.8

申请日：2010-11-29

申请人： Tosoh Corporation

发明人： MANIWA, Atsushi ,  OSHIMA, Noriaki ,  KAWANO, Kazuhisa ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki

IPC分类号： C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F15/00

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

公开(公告)号：EP2930179B1

公开(公告)日：2018-09-05

申请号：EP13860425.1

申请日：2013-12-06

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： TADA, Kenichi ,  YAMAMOTO, Toshiki ,  OIKE, Hiroyuki ,  MANIWA, Atsushi ,  CHIBA, Hirokazu ,  IWANAGA, Kohei ,  KAWANO, Kazuhisa

IPC分类号： C07F15/00 ,  C23C16/18 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/28568 ,  C07F7/02 ,  C07F15/0046 ,  C23C16/18 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871

摘要： To provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas. [Chem. 1] (wherein R 1a to R 7a , R 8 , R 9 and R 10 to R 18 represents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.)

公开(公告)号：EP2520690A1

公开(公告)日：2012-11-07

申请号：EP10840837.8

申请日：2010-11-29

申请人： Tosoh Corporation

发明人： MANIWA, Atsushi ,  OSHIMA, Noriaki ,  KAWANO, Kazuhisa ,  FURUKAWA, Taishi ,  CHIBA, Hirokazu ,  YAMAMOTO, Toshiki

IPC分类号： C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C07F15/00

CPC分类号： C07F17/02 ,  C23C16/18 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/31695 ,  H01L21/32051 ,  H01L29/4966

摘要： For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.

摘要翻译： 为了通过CVD法形成质量好的薄钌膜，需要在低温下形成薄膜。 因此，需要具有高热反应性的钌化合物。 本发明涉及以含有（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌和双（2,4-二甲基戊二烯基）钌）的钌络合物混合物作为原料的CVD等制造含钌膜的方法， 钌，相对于（2,4-二甲基戊二烯基）（乙基环戊二烯基）钌的重量，后者化合物的量为0.1〜100重量％。