公开(公告)号：EP1346085A4

公开(公告)日：2008-04-02

申请号：EP01998673

申请日：2001-11-30

申请人： UNIV NORTH CAROLINA STATE

发明人： CUOMO JEROME J ,  WILLIAMS N MARK ,  CARLSON ERIC P ,  HANSER ANDREW D ,  THOMAS DARIN T

IPC分类号： C30B29/38 ,  C23C14/00 ,  C23C14/35 ,  C30B23/00 ,  C30B23/02 ,  C30B25/18 ,  H01J37/34 ,  H01L21/203 ,  C30B23/08 ,  C30B25/06

CPC分类号： C30B29/403 ,  C23C14/0063 ,  C23C14/355 ,  C30B23/00 ,  C30B23/002 ,  C30B23/005 ,  C30B25/18 ,  C30B29/406 ,  C30B29/605 ,  H01J37/3408 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02631

摘要： A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal M N columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

摘要翻译： 一种方法利用溅射传输技术来产生阵列或层自我形成的自取向柱状结构，其特征为在各种衬底上的离散的单晶III族氮化物柱或柱。 柱状结构在单个生长步骤中形成，因此不需要用于沉积，图案化和蚀刻生长掩模的处理步骤。 通过溅射靶产生III族金属源蒸气，与由含氮源气提供的氮结合。 调整或控制III / V比以在反应室内产生有利于优先柱生长的III族金属富集环境。 反应物蒸气物质沉积在生长表面上以在其上产生单晶MN柱。 这些色谱柱可用作应变消除平台，用于生长连续的低缺陷密度散装材料。 另外，可以重新调整生长条件以实现柱状外延过度生长，其中III族氮化物材料的聚结在柱的顶部发生，由此形成基本上连续的层，在其上可以沉积附加层。 介于中间的柱结构减轻了基材，薄膜或柱上方和下方的其他层之间的热失配应力。 提供利用非热电子电子/等离子体注射器组件的高沉积速率溅射方法来执行一个或多个生长步骤。