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1.发明授权
公开(公告)号：EP3221000B1
公开(公告)日：2019-01-09
申请号：EP15798056.6
申请日：2015-11-19
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2.发明公开
公开(公告)号：EP3221000A1
公开(公告)日：2017-09-27
申请号：EP15798056.6
申请日：2015-11-19
申请人： CHAMBRE DE COMMERCE ET D'INDUSTRIE DE REGION PARIS ILE DE FRANCE (ESIEE PARIS) , Institut National de la Santé et de la Recherche Médicale (INSERM) , Université Pierre et Marie Curie (Paris 6) , Centre National de la Recherche Scientifique (CNRS)
CPC分类号： A61N1/05 , A61N1/025 , A61N1/0543 , A61N1/36 , H05K3/06 , H05K3/4682 , H05K2201/0154
摘要： The invention relates to a process for manufacturing at least one implant for focal electrical stimulation of a nervous structure, said implant being of the type including in a supporting structure a network of cavities (3) at the bottom of which are placed microelectrodes (4), the cavities (3) being bounded by walls (3a) erected and located around the microelectrodes (4), the supporting structure being produced beforehand by implementing the following steps: deposition and etching, in a planar manner, on an insulating substrate (10, 11), of electrical contacts (7), of electrical tracks (6a, 6b) and of microelectrodes (4), first tracks (6a) electrically connecting the microelectrodes (4) and the electrical contacts (7), second electrical tracks (6b) being electrically connected to a ground.
摘要翻译： 本发明涉及一种用于制造用于神经结构的局部电刺激的至少一个植入物的方法，所述植入物的类型包括在支撑结构中的腔体网络（3），其底部放置微电极（4） ，所述空腔（3）由竖立并位于所述微电极（4）周围的壁（3a）围成，所述支撑结构通过实施以下步骤预先制造：以平面方式沉积和蚀刻在绝缘基底（10 （6）和微电极（4）的电触头（7），电连接微电极（4）和电触头（7）的第一轨道（6a），第二电轨道 6b）电连接到地。
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3.发明公开
公开(公告)号：EP2566573A1
公开(公告)日：2013-03-13
申请号：EP11723540.8
申请日：2011-04-29
发明人： LORACH, Henri , DJILAS, Milan , YVERT, Blaise , BERGONZO, Philippe , LISSORGUES, Gaelle , ROUSSEAU, Lionel , BENOSMAN, Ryad, Benjamin , PICAUD, Serge , SAHEL, José , IENG, Siohoi
CPC分类号： A61N1/0553 , A61N1/025 , A61N1/05 , A61N1/37205
摘要： The invention relates to an implant which includes, in order to electrically stimulate a nerve structure, in particular the retina, an electrically insulating substrate (1), a network of recesses (2) formed in an upper surface of the substrate, stimulation electrodes (3) arranged at the bottom of the recesses, and an electrically conductive layer forming a floorplan (4) at the upper portion of the recesses. The sizes of the recesses and of the electrodes of the implant are such that the spatial selectivity of the stimulation current applied to the nerve structure are maximised.
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4.发明授权
公开(公告)号：EP2566573B1
公开(公告)日：2015-07-29
申请号：EP11723540.8
申请日：2011-04-29
发明人： LORACH, Henri , DJILAS, Milan , YVERT, Blaise , BERGONZO, Philippe , LISSORGUES, Gaelle , ROUSSEAU, Lionel , BENOSMAN, Ryad, Benjamin , PICAUD, Serge , SAHEL, José , IENG, Siohoi
IPC分类号： A61N1/02
CPC分类号： A61N1/0553 , A61N1/025 , A61N1/05 , A61N1/37205
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