摘要:
Embodiments of the subject invention relate to solar panels, methods of fabricating solar panels, and methods of using solar panels to capture and store solar energy. An embodiment of a solar panel can include a photovoltaic cell that is sensitive to visible light and an infrared photovoltaic cell that is sensitive to light having a wavelength of greater than 0.70 μm.
摘要:
An IR-to-Visible up-conversion device with a stacked layer structure includes an IR pass visible blocking layer such that the IR entry face of the stacked device allows IR radiation, particularly NIR radiation, to enter the device but visible light generated by a light emitting diode (LED) layer to be blocked from exit at that IR entry face of the device. The device has an IR transparent electrode at the IR entry face and a visible light transparent electrode such that the visible light can exit the device at a visible light detection face opposite the IR entry face.
摘要:
Embodiments of the subject invention relate to a method and apparatus for providing an at: least partially transparent one-side emitting OLED. The at least partially transparent one-side emitting OLED can include a mirror, such as a mirror substrate, substrate with a transparent anode and a transparent cathode. The mirror can allow at least a portion of the visible spectrum of light to pass through, while also reflecting at least another portion of the visible spectrum of light. The mirror can reflect at least a portion of the visible light emitted by a light emitting layer of the OLED incident on a first surface of the mirror, while allowing another portion of the visible light incident on a second surface of the mirror to pass through the mirror.
摘要:
Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (MR ) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention.
摘要:
Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with upconversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.
摘要:
Embodiments of the invention are directed to a transparent up-conversion device having two transparent electrodes. In embodiments of the invention, the up-conversion device comprises a stack of layers proceeding from a transparent substrate including an anode, a hole blocking layer, an IR sensitizing layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and an antireflective layer. In an embodiment of the invention, the up-conversion device includes an IR pass visible blocking layer,
摘要:
Embodiments of the subject invention relate to a method and apparatus for providing a apparatus that can function as a photovoltaic cell, for example during the day, and can provide solid state lighting, for example at night. The apparatus can therefore function as a lighting window. An embodiment can integrate an at least partially transparent one-side emitting OLED and a photovoltaic cell. The photovoltaic cell can be sensitive to infrared light, for example light having a wavelength greater than 1 μm. The apparatus can be arranged such that the one direction in which the OLED emits is toward the inside of a building or other structure and not out into the environment.
摘要:
A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.
摘要:
Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.