摘要:
The objective of the present invention is to effectively improve an image lag phenomenon of a direct conversion detector. The present invention provides an X-ray detector comprising: a lower electrode, formed on a substrate, to which a first driving voltage V1 is applied; an auxiliary electrode, around the lower electrode, to which a second driving voltage V2 is applied; a photoconductive layer formed on the lower electrode and the auxiliary electrode; and an upper electrode, formed on the photoconductive layer, to which a third driving voltage V3 is applied, wherein the third driving voltage V3, immediately following X-ray irradiation switch-off, is a reverse bias voltage.
摘要:
A detector assembly 100 is provided that includes a semiconductor detector 110, a pinhole collimator 130, and a processing unit 150. The semiconductor detector 110 has a first surface 112 and a second surface 114 opposed to each other. The first surface includes pixels, and the second surface includes a cathode electrode. The pinhole collimator 130 includes an array of pinhole openings corresponding to the pixels. Each pinhole opening is associated with a single pixel of the semiconductor detector, and the area of each pinhole opening is smaller than a corresponding area of the corresponding pixel. The processing unit 150 is operably coupled to the semiconductor detector 110 and configured to identify detected events within virtual sub-pixels distributed along a length and width of the semiconductor detector 110. Each pixel includes a plurality of corresponding virtual sub-pixels (as interpreted by the processing unit), wherein absorbed photons are counted as events in a corresponding virtual sub-pixel.
摘要:
The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.
摘要:
Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdS x Te 1-x (where 0≤x≤1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 µm and about 14 µm and methods for forming the same.
摘要:
A X-ray radiation detector is disclosed which has a dual-layer structure photoconductor layer. The dual-layer structure consists of a first photoconductor layer (12) comprising a plurality of photosensitive particles and of a second photoconductor layer (22) on the first photoconductor layer (12), comprising a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer (12) may fill gaps between the plurality of crystals of the second photoconductor layer (22). A method of manufacturing the radiation detector may include: forming a first photoconductor layer (12) by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate (11); forming a second photoconductor layer (22) by crystal-growing photosensitive material on a second substrate (25); pressing the crystal-grown second photoconductor layer (22) on the first photoconductor layer (12) that is applied to the first substrate (11) and removing the solvent in the first photoconductor layer (12) via a drying process.
摘要:
The present invention concerns a method for producing an intermediate product for obtaining a photovoltaic module comprising a plurality of solar cells, said method comprising the following steps: (a) localised deposition on a substrate (4) of a layer (7) of an Se or S material, so as to cover at least one portion (400) of the substrate, (b) deposition on this localised layer (7), of a layer (41) of conductive material, said layer coating the localised layer.
摘要:
A device of manufacturing a cascade thin film solar cell with improved productivity, and a thin film solar cell manufactured using the device have been disclosed. The thin film solar cell having a buffer layer formed by a method using the device has improved electrical characteristics.
摘要:
The invention relates to a process for manufacturing a I/III/VI 2 layer having photovoltaic properties, comprising: depositing a metal on a substrate in order to form a contact layer; depositing a precursor of the photovoltaic layer on the contact layer; and carrying out a heat treatment on the precursor while supplying the Group VI element in order to form the I/III/VI 2 layer. The Group VI element customarily diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a surface layer (SUP) on the contact layer. In the process of the invention the metal deposition comprises a step in which an additional element is added to the metal in order to form a compound (MO-EA) in the contact layer, this compound acting as a barrier to diffusion of the Group VI element, thereby making it possible to closely control the properties, especially the thickness, of the surface layer.
摘要:
A solar cell includes a substrate, a back electrode layer provided on the substrate, a light absorbing layer provided on the back electrode layer, a buffer layer including ZnS and provided on the light absorbing layer, and a window layer provided on the buffer layer.