公开(公告)号：EP2401232B1

公开(公告)日：2016-01-06

申请号：EP10746778.9

申请日：2010-02-24

申请人： University of Virginia Patent Foundation ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： WADLEY, Haydn N. G. ,  MATTAUSCH, Goesta ,  MORGNER, Henry ,  ROEGNER, Frank-Holm

IPC分类号： C01B33/12 ,  C23C16/513 ,  H05H1/24 ,  H01J37/32 ,  H01J37/34 ,  H01J37/305

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

公开(公告)号：EP2572014A1

公开(公告)日：2013-03-27

申请号：EP11778439.7

申请日：2011-05-06

申请人： University of Virginia Patent Foundation ,  Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V.

发明人： WADLEY, Haydn N. G. ,  MATTAUSCH, Goesta ,  ROEGNER, Frank-Holm ,  SCHEFFEL, Bert ,  METZNER, Christoph

IPC分类号： C23C14/34 ,  C23C14/30 ,  C23C14/22 ,  C23C14/00

CPC分类号： C23C14/325 ,  C23C14/0021 ,  C23C14/228 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32614 ,  H01J2237/006 ,  H01J2237/3137

摘要： A plasma assisted directed vapor deposition process that utilizes a spotless arc directed vapor deposition (SA-DVD) method for the creation of the plasma in a directed vapor deposition apparatus. Vapor is created by electron or other high intensity directed energy beam evaporation from one or more source materials contained in a water cooled crucible. This vapor is entrained in a transonic helium or other gas jet and transported to a substrate for deposition. The electron or other directed energy beam used for evaporation is simultaneously exploited to ionize the vapor and the jet forming gas (helium, or other gases including combinations of inert and reactant gases). An anode positioned near the electron beam impingement position attracts scattered electrons formed during the directed energy beams interaction with a target surface and enables the formation of an intense plasma. This plasma is at first transported towards the substrate by the vapor entraining gas jet through an ion-drag mechanism. However, if the substrate is sufficiently charged (electrically biased), the plasma ions are electrostatically accelerated towards the substrate and this extra momentum aids in vapor transport and deposition on a component surface.

公开(公告)号：EP2401232A1

公开(公告)日：2012-01-04

申请号：EP10746778.9

申请日：2010-02-24

申请人： University Of Virginia Patent Foundation ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： WADLEY, Haydn N. G. ,  MATTAUSCH, Goesta ,  MORGNER, Henry ,  ROEGNER, Frank-Holm

IPC分类号： C01B33/12 ,  C23C16/513 ,  H05H1/24

CPC分类号： H01J37/32596 ,  C23C14/228 ,  C23C14/246 ,  C23C14/30 ,  C23C14/32 ,  H01J37/3053 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32339 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/34 ,  H01J2237/332

摘要： A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

公开(公告)号：EP3061115A1

公开(公告)日：2016-08-31

申请号：EP14787123.0

申请日：2014-10-09

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： MATTAUSCH, Gösta ,  FEINAEUGLE, Peter ,  KIRCHHOFF, Volker ,  ROEGNER, Frank-Holm ,  SCHMIDT, Sebastian ,  ENDER, Felix ,  KUBUSCH, Jörg ,  KAUFMANN, Steffen ,  WEISS, Stefan

IPC分类号： H01J33/00 ,  G21K5/04 ,  G21K5/10 ,  A61L2/08 ,  B01J19/08 ,  A23L3/26 ,  B65B55/08

CPC分类号： G21K5/04 ,  A23L3/263 ,  G21K5/10 ,  H01J17/40 ,  H01J33/02 ,  H01J33/04

摘要： The invention relates to an apparatus for generating accelerated electrons, comprising: a housing (101) which delimits an evacuable space (102a; 102b) and has an electron exit window (104); an inlet for supplying a working gas into the evacuable space (102); at least one first cathode (105a; 105b) and at least one first anode (101), between which a corona discharge plasma (106) can be generated in the evacuable space (102a) by means of a first applied electric voltage, wherein ions from the corona discharge plasma (106) can be accelerated onto the surface (110) of a second cathode (107) and electrons emitted by the second cathode (107) can be accelerated in the direction of the electron exit window (104) by means of a second electric voltage applied between the second cathode (107) and a second anode (108), wherein the housing (101), the second cathode (107) and the electron exit window (104) are ring-shaped, and wherein the surface perpendiculars of the electron exit window (104) and the surface region (110) of the second cathode (107) from which the electrons are emitted are oriented towards the ring interior of the ring-shaped housing (101).