公开(公告)号：EP3053198A1

公开(公告)日：2016-08-10

申请号：EP14850973.0

申请日：2014-09-26

Applicant: Vishay General Semiconductor LLC

Inventor： CHEN, Shih-Kuan ,  CHIANG, Wan-Lan ,  LIN, Yih-Yin ,  CHIANG, Ming-Tai ,  PENG, Chih-Ping

IPC: H01L29/866

CPC classification number: H01L29/0611 ,  H01L21/2253 ,  H01L21/2257 ,  H01L21/2652 ,  H01L21/283 ,  H01L29/456 ,  H01L29/66106 ,  H01L29/66113 ,  H01L29/861 ,  H01L29/866

Abstract: A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

公开(公告)号：EP2481087A1

公开(公告)日：2012-08-01

申请号：EP10819297.2

申请日：2010-09-20

Applicant: Vishay General Semiconductor, LLC. ,  Tsai, Hung-Ping

Inventor： TSAI, Hung-Ping ,  CHEN, Shih-Kuan ,  KAO, Lung-Ching

IPC: H01L29/06

CPC classification number: H01L29/6609 ,  H01L29/0657 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/868

Abstract: A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.

Abstract translation: 高功率密度或低正向电压整流器，在阳极和阴极都使用至少一个沟槽。 沟槽形成在衬底的相对表面中，以增加半导体管芯的每单位表面积的接合表面积。 这种结构允许增加电流负载而不增加水平裸片空间。 增加的电流处理能力允许整流器在较低的正向电压下工作。 此外，目前的结构提高了30％的基板使用量。