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公开(公告)号:EP3123477A2
公开(公告)日:2017-02-01
申请号:EP15732448.4
申请日:2015-03-26
申请人: Yeda Research and Development Co. Ltd , Yissum Research and Development Company of the Hebrew University of Jerusalem Ltd.
发明人: NAAMAN, Ron , KANTOR-URIEL, Nirit , MATHEW, Shinto P. , PALTIEL, Yossef , BEN-DOR, Oren , YOCHELIS, Shira , PEER, Nir
CPC分类号: H01L43/04 , G01R33/07 , G01R33/091 , G11C11/16 , G11C11/161 , G11C11/18 , G11C13/0014 , G11C13/04 , G11C13/043 , H01L43/065 , H03K19/18
摘要: An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure. The device including a circuit configured to apply an electrical current between the first pair of electrical contacts and to detect the variation of spin-distribution of charge carriers within the spin accumulating structure by determining electrical voltage between the second pair of electrical contacts in response to the applied electrical current.
摘要翻译: 提出了一种电子装置,该装置包括:自旋积聚结构; 自旋选择滤光器,其在其第一端处电连接到所述自旋聚集层结构的第一表面; 在所述自旋选择性过滤器的第二端附接到所述自旋选择性过滤器的电荷载体源; 至少第一和第二对电触头,其连接到自旋存储层结构并且限定通过所述自旋累积层的第一和第二电路径,所述第一和第二电路在所述自旋累积层结构内相交。 该器件被配置为通过响应于第一对电触点之间的电流来确定第二对电触头之间的电压来使得能够检测自旋存储层结构内的电荷载流子自旋分布的变化。
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公开(公告)号:EP3676608A1
公开(公告)日:2020-07-08
申请号:EP18762934.0
申请日:2018-08-26
申请人: Yeda Research and Development Co. Ltd , Yissum Research and Development Company of the Hebrew University of Jerusalem Ltd.
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公开(公告)号:EP3204533B1
公开(公告)日:2020-09-16
申请号:EP15849585.3
申请日:2015-10-07
发明人: NAAMAN, Ron , FONTANESI, Claudio , MTANGI, Wilbert
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公开(公告)号:EP3204533A1
公开(公告)日:2017-08-16
申请号:EP15849585.3
申请日:2015-10-07
发明人: NAAMAN, Ron , FONTANESI, Claudio , MTANGI, Wilbert
摘要: An electrode is presented for use in an oxidation process. The electrode comprises a substrate having an electrically conductive surface carrying a chiral system. The chiral system is configured for controlling spin of electrons transferred between the substrate and electrolyte during the oxidation process.
摘要翻译: 提供电极用于氧化过程。 电极包括具有携带手性系统的导电表面的基底。 手性系统被配置用于在氧化过程期间控制在基底和电解质之间转移的电子的旋转。
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公开(公告)号:EP3870354A1
公开(公告)日:2021-09-01
申请号:EP19798754.8
申请日:2019-10-23
申请人: Yeda Research and Development Co. Ltd , YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD
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公开(公告)号:EP1425411A2
公开(公告)日:2004-06-09
申请号:EP00935454.9
申请日:2000-06-07
发明人: NAAMAN, Ron , CAHEN, David , ARTZI, Reit
IPC分类号: C12Q1/68
CPC分类号: C12Q1/6825 , Y10T436/143333 , C12Q2565/607
摘要: A semiconductor device is provided for the detection of a target DNA or RNA, for example for the detection of a mutation in a gene responsible for a genetic disorder, said device being composed of: (i) at least one layer of a conducting semiconductor such as doped n-GaAs or n-(Al,Ga)As; (ii) at least one insulating or semi-insulating layer such as of an undoped semiconductor, e.g., n-GaAs or n-(Al,Ga)As; (iii) at least one single-stranded DNA probe directly adsorbed on the surface of an upper layer which is either a conducting semiconductor layer (i) or an insulating or semi-insulating layer (ii); and (iv) two conducting pads on the upper layer making electrical contact with the conducting semiconductor layer (i), such that electrical current can flow between them at a finite distance from the surface of the device. In an alternative, the upper layer has no single-stranded DNA probe and such probe can be adsorbed on the upper layer by the user at will. The DNA probe may have a sequence complementary to a sequence of the target DNA or RNA, and the detection of the target DNA is carried out by hybridization with the probe and monitoring either the current change resulting from the hybridization process when a constant electric potential is applied between the two conducting pads or measuring the change in the electric potential required to keep a constant current. Also provided are arrays of said devices suitable for DNA analysis and detection.
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公开(公告)号:EP1358461A2
公开(公告)日:2003-11-05
申请号:EP02716275.9
申请日:2002-01-17
发明人: NAAMAN, Ron , SHVARTS, Dmitry , WU, Dengguo , CAHEN, David , HARAN, Avner , BENSHAFRUT, Aharon
IPC分类号: G01N1/00
CPC分类号: G01N33/0037 , G01N27/4141 , Y02A50/245 , Y10T436/177692
摘要: A semiconductor device (FIG. 1) is provided for the detection of nitric oxide (NO) molecules in gaseous mixtures, in biological fluids and in aqueous solutions. The device is a molecular controlled semiconductor resistor (MOCSER) of a multilayered GaAs structure to which top layer a layer of multifunctional NO-binding molecules are adsorbed. The sensitivity of the semiconductor device towards NO is independent of mixture composition. Nitric oxide concentrations of as low as 10 ppb NO were detected in mixtures containing various contaminants.
摘要翻译: 提供半导体器件(图1)用于检测气态混合物中的生物液体和水溶液中的一氧化氮(NO)分子。 该器件是一种多层GaAs结构的分子控制半导体电阻(MOCSER),顶层上吸附了一层多功能NO结合分子。 半导体器件对NO的灵敏度与混合物成分无关。 在含有各种污染物的混合物中检测到低至10ppb NO的一氧化氮浓度。
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公开(公告)号:EP3776678A1
公开(公告)日:2021-02-17
申请号:EP19719368.3
申请日:2019-04-07
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公开(公告)号:EP1606215B1
公开(公告)日:2008-12-17
申请号:EP04714416.7
申请日:2004-02-25
发明人: NAAMAN, Ron , CARMELI, Itai , LEITUS, Grigorii , REICH, Shimon , VAGER, Zeev
IPC分类号: G11C13/00
CPC分类号: G11C11/54 , B82Y10/00 , G11C13/0014 , Y10T428/31678
摘要: A nanoscopic structure is provided, presenting a paramagnetic and spin selective material for spintronics. The structure comprises organic molecules absorbed on and extending from a surface of an electrically conductive film, wherein said organic molecules contain a binding group forming a chemical bond to said surface and form a self-assembled monolayer on said surface.
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10.
公开(公告)号:EP1425411B1
公开(公告)日:2006-08-16
申请号:EP00935454.9
申请日:2000-06-07
发明人: NAAMAN, Ron , CAHEN, David , ARTZI, Reit
CPC分类号: C12Q1/6825 , Y10T436/143333 , C12Q2565/607
摘要: A semiconductor device is provided for the detection of a target DNA or RNA, for example for the detection of a mutation in a gene responsible for a genetic disorder, said device being composed of: (i) at least one layer of a conducting semiconductor such as doped n-GaAs or n-(Al,Ga)As; (ii) at least one insulating or semi-insulating layer such as of an undoped semiconductor, e.g., n-GaAs or n-(Al,Ga)As; (iii) at least one single-stranded DNA probe directly adsorbed on the surface of an upper layer which is either a conducting semiconductor layer (i) or an insulating or semi-insulating layer (ii); and (iv) two conducting pads on the upper layer making electrical contact with the conducting semiconductor layer (i), such that electrical current can flow between them at a finite distance from the surface of the device. In an alternative, the upper layer has no single-stranded DNA probe and such probe can be adsorbed on the upper layer by the user at will. The DNA probe may have a sequence complementary to a sequence of the target DNA or RNA, and the detection of the target DNA is carried out by hybridization with the probe and monitoring either the current change resulting from the hybridization process when a constant electric potential is applied between the two conducting pads or measuring the change in the electric potential required to keep a constant current. Also provided are arrays of said devices suitable for DNA analysis and detection.
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