摘要:
The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. According to the invention, this composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits, especially in three dimensions.
摘要:
The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: - a container (10) intended to contain an electrolyte (E), - a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), - a counter-electrode (30) arranged in the container (10), - illumination means (50) comprising a source (51 ) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and - an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction. The invention also concerns the method to conduct an electrochemical reaction on a surface of a corresponding semiconductor substrate.
摘要:
The invention concerns the use of a diazonium salt R-N2+ bearing an aromatic group R, for grafting said aromatic group onto insulating, semi-conductive, surfaces made of binary or ternary compounds or composite materials, said diazonium salt being present at a concentration close to its solubility limit, in particular at a concentration higher than 0.05 M, and ranging preferably between about 0.5 M and about 4M.
摘要:
The invention relates to the use of radicals RO?, R representing a hydrogen atom, an alkyl group comprising between 2 and 15 carbon atoms, a -COR' acyl group in which R' represents an alkyl group comprising between 2 and 15 carbon atoms, or a -COAr aroyl group in which Ar represents an aromatic group comprising between 6 and 15 carbon atoms, for the hydroxylation, alcoxylation or oxycarbonylation of polymer surfaces or mixtures of polymers, said polymers comprising monomeric units, at least 50 % thereof comprising aliphatic units, and said RO? radicals being generated electrochemically or photochemically.
摘要:
The invention relates to a method for grafting an organic film onto an electically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocole consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.
摘要:
The invention concerns a method for forming nickel silicide or cobalt silicide comprising the steps consisting of: - exposing the surface of a substrate comprising silicon to an aqueous solution containing 0.1 mM to 10 mM of gold ions and 0.6 M to 3.0 M of fluorine ions for a time period of between 5 seconds and 5 minutes, - depositing a layer consisting essentially of nickel or of cobalt on the activated substrate by electroless means, - applying a rapid thermal treatment at a temperature of between 300°C and 750°C, so as to form nickel silicide or cobalt silicide. The aqueous solution contains a surfactant chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising 10 to 16 carbon atoms. This method can be applied, essentially, to the production of NAND memories and photovoltaic cells.
摘要:
The present invention concerns an electrolyte composition for depositing copper onto semi-conductive substrates covered with a barrier layer. This electrolyte contains a combination of imidazole and 2,2'-bipyridine, used as a suppressor, and thiodiglycolic acid, used as an accelerator. The combination of these additives makes it possible to obtain bottom-up filling on very narrow trenches, typically narrower than 100 nm.