FORMATION OF SILICON NANOSTRUCTURES
    2.
    发明公开
    FORMATION OF SILICON NANOSTRUCTURES 审中-公开
    的形成硅纳米结构的

    公开(公告)号:EP1628908A1

    公开(公告)日:2006-03-01

    申请号:EP04707340.8

    申请日:2004-02-02

    发明人: MARKWITZ, Andreas

    IPC分类号: B82B3/00

    摘要: The present invention comprises a method of forming nanostructures on a silicon substrate including the steps of in a chamber heating the substrate with an electron beam to a peak temperature, holding the peak temperature for a predetermined time, and decreasing the temperature of the substrate. Neon and carbon ions may be implanted into the substrate before the step of heating the substrate to produce different nanostructures. Implanting with nitrogen before heating prevents the formation of nanostructures. Plasma immersion ion implantation with nitrogen ions before heating also forms nanostructures.