Process and apparatus for treating gas containing fluorine-containing compounds and CO
    1.
    发明公开
    Process and apparatus for treating gas containing fluorine-containing compounds and CO 有权
    用于与含氟化合物和CO的气体处理方法和设备

    公开(公告)号:EP1228800A1

    公开(公告)日:2002-08-07

    申请号:EP02002477.4

    申请日:2002-02-01

    申请人: EBARA CORPORATION

    发明人: Mori, Yoichi

    IPC分类号: B01D53/86 B01D53/62

    摘要: The purpose of the present invention is to provide a process and an apparatus for efficiently treating a gas containing fluorine-containing compounds and CO to be discharged, for example, from the step of dry cleaning the inner surfaces and the like of a semiconductor manufacturing apparatus or the step of etching various types of formed films such as oxide films in the semiconductor industry. In order to accomplish the above-mentioned purpose, the gas treating process according to the present invention is a process for treating a gas containing fluorine-containing compounds and CO which comprises contacting the above described gas with O 2 and H 2 O at a temperature of 850°C or higher to oxidize the CO to CO 2 ; and then contacting the gas with γ-alumina at a temperature of 600 to 900°C to decompose the fluorine-containing compounds.

    摘要翻译: 本发明的目的是提供一种用于有效地处理含气体的含氟化合物和CO提供一个过程和设备中放电时,例如,从干洗的步骤的内表面等的半导体制造装置的 或蚀刻的各种类型的膜的步骤中形成的:如在半导体工业中的氧化膜。 为了实现上述目的,该气体处理过程雅丁到本发明是一种用于处理含气体的含氟化合物的方法和CO其包括使用O 2和H 2 O上述气体在850℃的温度 C.或更高,以氧化CO为CO 2; 然后用接触γ-氧化铝的气体在600〜900℃的温度以分解含氟化合物。