公开(公告)号：EP1858440B1

公开(公告)日：2024-04-24

申请号：EP06733915.0

申请日：2006-01-24

IPC: C22C27/00 ,  C22C30/00 ,  C22C27/04 ,  C22F1/18 ,  B22F3/16 ,  B22F5/10 ,  A61P7/02 ,  A61P9/00 ,  A61P35/00 ,  A61P37/06 ,  A61P43/00 ,  A61F2/91 ,  B22F3/24

CPC classification number: A61F2/91 ,  B22F3/16 ,  B22F5/10 ,  B22F2003/24820130101 ,  B22F2998/1020130101 ,  B22F2999/0020130101 ,  C22C27/00 ,  C22C27/04 ,  C22C30/00 ,  C22F1/18 ,  B22F2998/0020130101 ,  Y10S606/907 ,  A61P35/00 ,  A61P37/06 ,  A61P43/00 ,  A61P7/02 ,  A61P9/00

公开(公告)号：EP2999663A4

公开(公告)日：2017-01-18

申请号：EP14801372

申请日：2014-05-20

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： MURDOCH HEATHER A ,  SCHUH CHRISTOPHER A

IPC: C01C1/18

CPC classification number: G01N25/02 ,  C22C1/002 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C11/00 ,  C22C12/00 ,  C22C13/00 ,  C22C14/00 ,  C22C16/00 ,  C22C18/00 ,  C22C19/03 ,  C22C19/07 ,  C22C20/00 ,  C22C24/00 ,  C22C27/00 ,  C22C27/02 ,  C22C27/04 ,  C22C28/00 ,  C22C38/06 ,  C22C45/00

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

公开(公告)号：EP2989225A1

公开(公告)日：2016-03-02

申请号：EP14787700.5

申请日：2014-04-08

Applicant: Icon Medical Corp.

Inventor： PATEL, Udayan ,  ROTH, Noah

IPC: C22F1/00

CPC classification number: A61F2/82 ,  A61B17/86 ,  B21J7/14 ,  C22C27/00 ,  C22C27/02 ,  C22C27/04 ,  C22F1/00 ,  C22F1/18

Abstract: A method and process for at least partially forming a medical device which improves the physical properties of the medical device.

Abstract translation: 一种用于至少部分地形成改善医疗装置的物理性质的医疗装置的方法和过程。

公开(公告)号：EP1868528A4

公开(公告)日：2011-04-06

申请号：EP06720079

申请日：2006-01-30

Applicant: ICON MEDICAL CORP

Inventor： FURST JOSEPH G ,  BUCKMAN RAYMOND W JR ,  PATEL UDAYAN

IPC: A61F2/06 ,  A61L33/00 ,  B22F1/00 ,  B22F3/00 ,  B22F3/12 ,  B22F3/24 ,  B22F7/00 ,  B23P13/00 ,  B23P15/00 ,  B23P17/00 ,  B23P25/00 ,  C22F1/18

CPC classification number: B22F3/16 ,  A61F2/91 ,  B22F5/10 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  B22F2999/00 ,  C22C27/00 ,  C22C27/04 ,  C22C30/00 ,  C22F1/18 ,  Y10S606/907 ,  B22F3/04 ,  B22F2201/10 ,  B22F2201/01 ,  B22F2201/20 ,  B22F3/10 ,  B22F3/20 ,  B22F1/0003 ,  B22F3/24 ,  B22F5/106

Abstract: A medical device that is at least partially formed of a novel metal alloy, which novel metal alloy improves the physical properties of the medical device.

公开(公告)号：EP1523048A3

公开(公告)日：2010-01-13

申请号：EP04256194.4

申请日：2004-10-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shutoh, Naoki, c/o Toshiba Corporation ,  Sakurada, Shinya, c/o Toshiba Corporation ,  Kondo, Naruhito, c/o Toshiba Corporation ,  Tsuneoka, Osamu, c/o Toshiba Corporation

IPC: H01L35/20 ,  C22C12/00 ,  C22C27/00 ,  C22C30/00 ,  H01L35/28

CPC classification number: H01L35/18 ,  B22F2009/041 ,  B22F2998/10 ,  C22C12/00 ,  C22C27/00 ,  C22C30/00 ,  B22F9/04 ,  B22F3/02 ,  B22F3/10

Abstract: Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure:
(T a1 Zr b1 Hf c1 ) x Co y Sb 100-x-y
   wherein 0

公开(公告)号：EP2104169A1

公开(公告)日：2009-09-23

申请号：EP07850464.4

申请日：2007-12-12

Applicant: Kabushiki Kaisha Kobe Seiko Sho

Inventor： SATO, Toshiki c/o Kobe Corporate Research Laboratories Steel,Ltd ,  SUZUKI, Jun c/o Kobe Corporate Research Laboratories Steel,Ltd ,  ITO, Yoshinori c/o Kobe Corporate Research Laboratories Steel,Ltd ,  ITO, Hirotaka c/o Kobe Corporate Research Laboratories Steel,Ltd ,  TANIFUJI, Shinichi c/o Kobe Corporate Research Laboratories Steel,Ltd

IPC: H01M8/02 ,  C22C5/02 ,  C22C5/04 ,  C22C14/00 ,  C22C16/00 ,  C22C27/00 ,  C22C27/02 ,  C22F1/05 ,  C22F1/18 ,  C23C14/14 ,  H01M8/10

CPC classification number: H01M8/0206 ,  C22C5/02 ,  C22C5/04 ,  C22C14/00 ,  C22C16/00 ,  C22C27/00 ,  C22C27/02 ,  C22F1/05 ,  C22F1/18 ,  C23C14/16 ,  C23C14/165 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5853 ,  H01M8/0208 ,  H01M8/021 ,  H01M8/0228 ,  H01M8/0263 ,  H01M2008/1095 ,  Y02P70/56

Abstract: The present invention concerns an alloy film for a metal separator for a fuel cell characterized by containing at least one noble metal element selected from Au and Pt and at least one non-noble metal element selected from the group consisting of Ti, Zr, Nb, Hf, and Ta, at a content ratio of noble metal element/non-noble metal element of 35/65 to 95/5, and having a film thickness of 2 nm or more. The present invention also relates to a manufacturing method of an alloy film for the metal separator for the fuel cell and a target material for sputtering, as well as the metal separator and the fuel sell. The alloy film for the metal separator for the fuel cell according to the invention is excellent in the corrosion resistance, has low contact resistance, can maintain the low contact resistance for a long time even in a corrosive environment, and is excellent further in the productivity.

Abstract translation: 本发明涉及到合金膜通过含有Au和Pt和选自钛，锆，铌中的至少一种非贵金属元素中选择的至少一种贵金属元素为特征的用于燃料电池的金属隔板， Hf及Ta中，在35/65贵金属元素/非贵金属元素的至95/5的含量比，并且具有2nm或更大的膜厚度。 因此，本发明涉及一种用于对燃料电池和用于溅射的靶材料，以及金属隔板和燃料销售的金属隔板用合金皮膜的制造方法。 用于燃料电池雅丁到本发明的金属隔板用合金皮膜具有优异的耐腐蚀性，具有低的接触电阻，可以维持很长一段时间，即使在腐蚀环境下的接触电阻低，且具有优异此外，在生产率 ，

公开(公告)号：EP2017360A2

公开(公告)日：2009-01-21

申请号：EP08165172.1

申请日：2004-10-25

Applicant: Nippon Mining & Metals Co., Ltd.

Inventor： SHINDO, Yuichiro

IPC: C22B34/14

CPC classification number: C22C27/00 ,  C22B34/14 ,  C23C14/3414

Abstract: The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.

Abstract translation: 本发明涉及高纯度铪具有纯度为4N或更高不含锆和气体成分和40重量ppm或更低的氧含量，并寻求高纯度铪靶和薄膜形成，并且具有的纯度的高纯度铪 4N以上不含锆和气体成分并且其中的硫和磷的含量分别为10重量ppm或更低。 因此，本发明涉及一种使用具有减小的锆作为原料海绵铪高纯度铪材料，并且其中氧，硫和在铪含磷的含量降低时，以及到目标和薄 寻求材料成膜，并以高纯度铪的制造方法。 从而提供了有效且稳定的制造技术，使高纯度铪材料的制造中，与目标和从寻求材料的薄膜形成的。

公开(公告)号：EP1956106A3

公开(公告)日：2008-09-10

申请号：EP07123880.2

申请日：2007-12-20

Applicant: Heraeus, Inc.

Inventor： Das, Anirban ,  Racine, Michael Gene ,  Imakawa, Makoto ,  Kennedy, Steven Roger ,  Arora, Rikhit

IPC: C22C27/00 ,  C23C14/34 ,  G11B5/64

CPC classification number: C22C27/00 ,  C23C14/3414 ,  G11B5/7325 ,  G11B5/8404 ,  G11B5/851

Abstract: A Re-based alloy material comprises > 50 at. % Re and at least one alloying material selected from grain size refinement elements X which have an atomic radius larger or smaller than that of Re and a solid solubility hcp Re at room or higher temperatures, and lattice matching elements Y which have an atomic radius larger or smaller than that of Re and form a solid solution in hcp Re at room or higher temperatures. The alloy material may further comprise at least one material selected from the group consisting of oxides, nitrides, and carbides. Targets comprising the Re-based alloy material are useful in sputter deposition of improved interlayers for obtaining optimally structured granular perpendicular magnetic recording layers.

公开(公告)号：EP1329526B1

公开(公告)日：2007-09-12

申请号：EP01947791.8

申请日：2001-06-29

Applicant: Nippon Mining & Metals Co., Ltd.

Inventor： SHINDO,Y., c/o Isohara Fact.of Nikko Mater,Co. Ltd

IPC: C22B34/14 ,  C22B9/22 ,  B22F9/04 ,  C23C14/34

CPC classification number: H01L21/28194 ,  B22F9/023 ,  C22B9/228 ,  C22B34/14 ,  C22C1/0458 ,  C22C16/00 ,  C22C27/00 ,  C23C14/3414 ,  H01L23/53257 ,  H01L29/51 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high purity zirconium or hafnium which is extremely reduced in the contents of an alkali metal such as Na or K, a radioactive element such as U or Th, a transition metal or heavy metal or high melting point metal such as Fe, Ni, Co, Cr, Cu, Mo, Ta or V, and a gas forming element such as C or O; and a method for producing a high purity zirconium or hafnium which allows the production thereof at a low cost; and a method for producing a powder of high purity zirconium or hafnium with safety and at a low cost which comprises using a hydrogenated high purity zirconium or hafnium as a material. The high purity zirconium or hafnium is greatly reduced in the contents of impurities which are obstacles to assurance of operational functions of a semiconductor.

公开(公告)号：EP1686196A4

公开(公告)日：2007-04-25

申请号：EP04792914

申请日：2004-10-25

Applicant: NIPPON MINING CO

Inventor： SHINDO YUICHIRO

IPC: C22B34/14 ,  C23C14/34

CPC classification number: C22C27/00 ,  C22B34/14 ,  C23C14/3414

Abstract: A high purity hafnium, characterized in that it has a purity of 4N or higher, with the exception of zirconium and gas components, and has an oxygen content of 40 wt ppm or less; a target and thin film comprising the high purity hafnium; a high purity hafnium, characterized in that it has a purity of 4N or higher, with the exception of zirconium and gas components, and has both of a sulfur content and a phosphorus content of 10 wt ppm or less; a target and thin film comprising the high purity hafnium; a high purity hafnium material which is prepared by the use of a hafnium sponge having been reduced in the content of zirconium as a raw material and is further reduced in the contents of oxygen, sulfur and phosphorus; a target and thin film comprising the high purity hafnium material; and a method for producing a high purity hafnium. An efficient and stable production technique, a high purity hafnium material prepared by the technique, and a target and a thin film comprising said material are provided.