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    CU-CO-SI-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND PROCESS FOR PRODUCTION THEREOF
    6.
    发明公开
    CU-CO-SI-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND PROCESS FOR PRODUCTION THEREOF 有权
    KUPFERLEGIERUNG AUF CU-CO-SI-BASISFÜRELEKTRONISCHE MATERIALIEN UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2578709A1

    公开(公告)日：2013-04-10

    申请号：EP11789534.2

    申请日：2011-04-08

    申请人： JX Nippon Mining & Metals Corporation

    发明人： KUWAGAKI,Hiroshi

    IPC分类号： C22C9/06 ,  C22C9/00 ,  C22C9/01 ,  C22C9/02 ,  C22C9/04 ,  C22C9/05 ,  C22C9/10 ,  C22F1/08 ,  H01B1/02 ,  C22F1/00

    CPC分类号： H01B1/026 ,  C22C9/01 ,  C22C9/02 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C9/10 ,  C22F1/00 ,  C22F1/08

    摘要： Disclosed is a Cu-Co-Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×10 12 to 1×10 14 particles/mm 3 , and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.

    摘要翻译： 公开了一种用于电子材料的Cu-Co-Si基铜合金，其能够实现高水平的强度，导电性和抗凝固性; 并且含有0.5〜3.0质量％的Co，0.1〜1.0质量％的Si，余量为Cu和不可避免的杂质; 其中，在基体中析出的第二相粒子中，粒径为5nm以上且50nm以下的粒子的数密度为1×10 12〜1×10 14个/ mm 3， 相对于粒径为10nm以上且50nm以下的粒子的数密度，粒径为5nm以上且小于10nm的粒子的密度为3〜6。

    COPPER ALLOY ENCLOSURES
    8.
    发明公开
    COPPER ALLOY ENCLOSURES 审中-公开
    铜合金壳体

    公开(公告)号：EP2504461A1

    公开(公告)日：2012-10-03

    申请号：EP09851747.7

    申请日：2009-11-24

    申请人： Luvata Appleton LLC

    发明人： BIERSTEKER, Robert, A. ,  STEVENS, John, J. ,  MICHALEWSKI, Carl, J. ,  CYRA, Robert, F.

    IPC分类号： C22C9/10 ,  A01K69/00 ,  C09D5/14

    CPC分类号： C22C9/10 ,  A01K69/08 ,  C09D1/02 ,  C09D5/1618 ,  C09D5/1656

    摘要： An antifouling barrier comprising a silicon bronze alloy, the silicon bronze alloy comprising about 0.5% to about 3.8% silicon (wt/wt alloy) and greater than about 90% copper (wt/wt alloy). In some embodiments, the silicon bronze alloy additionally comprises from about 0.05% to about 1.3% manganese (wt/wt alloy). The antifouling barrier may be a welded wire mesh, screen, chain-link, chain-mail, grid, weave, perforated sheet, or chicken wire. Methods of reducing the growth of an organism on an animal enclosure, comprising contacting at least a portion of the animal enclosure with an antifouling barrier comprising a silicon bronze alloy comprising about 0.5% to about 3.8% silicon (wt/wt alloy) and greater than about 90% copper (wt/wt alloy).

    Copper alloy sheet, manufacturing method of copper alloy sheet, and electric /electronic component
    10.
    发明公开
    Copper alloy sheet, manufacturing method of copper alloy sheet, and electric /electronic component 有权
    Kupferlegierungsblech，Herstellungsverfahren davon und elektrische / elektronische Komponente

    公开(公告)号：EP2377959A1

    公开(公告)日：2011-10-19

    申请号：EP10007023.4

    申请日：2010-07-07

    申请人： DOWA METALTECH CO., LTD.

    发明人： Gao, Weilin ,  Sugawara, Akira ,  Miyahara, Ryosuke ,  Suda, Hisashi

    IPC分类号： C22C9/06 ,  C22C9/10 ,  C22F1/08

    CPC分类号： C22C9/06 ,  C22C9/10 ,  C22F1/08 ,  H01B1/026

    摘要： There is provided a copper alloy sheet including 1.0 to 3.5 mass% Ni, 0.5 to 2.0 mass% Co, and 0.3 to 1.5 mass% Si, a Co/Ni mass ratio being 0.15 to 1.5, an (Ni + Co)/Si mass ratio being 4 to 7, and a balance being composed of Cu and an unavoidable impurity, wherein in observation results of a crystal grain boundary property and crystal orientation by EBSP measurement, a density of twin boundaries among all crystal grain boundaries is 40% or more and an area ratio of crystal grains with Cube orientation is 20% or more, on a rolled surface.

    摘要翻译： 提供了含有1.0〜3.5质量％的Ni，0.5〜2.0质量％的Co和0.3〜1.5质量％的Si，Co / Ni质量比为0.15〜1.5，（Ni + Co）/ Si质量 比例为4〜7，余量由Cu和不可避免的杂质构成，其中通过EBSP测定观察结晶晶界特性和晶体取向的观察结果，所有晶粒边界之间的双边界密度为40％以上 并且在轧制表面上具有Cube取向的晶粒的面积比为20％以上。