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公开(公告)号：EP2762846A2
公开(公告)日：2014-08-06
申请号：EP14153517.9
申请日：2014-01-31
发明人： Uchii, Toshiyuki , Mori, Tadashi
IPC分类号： G01J5/60
CPC分类号： G01J5/0014 , G01J5/06 , G01J5/0821 , G01J5/0896 , G01J5/602 , G01J2005/0051 , G01J2005/0074 , G01K11/12
摘要： In an embodiment, a temperature measurement device is provided with: light collection means; extraction means; optical intensity calculation means; and temperature measurement means. The light collection means collects the emission spectrum of a measurement subject. The extraction means extracts beams having the wavelength of the atomic spectral lines and a beam having a wavelength in a wavelength region where there are no atomic spectral lines, from the emission spectrum collected by the aforementioned light collection means. The optical intensity calculation means calculates the optical intensities of the beams extracted by the aforementioned extraction means. The temperature measurement means calculates the temperature of the aforementioned measurement subject, based on the intensities of the beams calculated by the aforementioned optical intensity calculation means.
摘要翻译： 在一个实施例中，温度测量装置具有：光收集装置; 提取手段; 光强计算手段; 和温度测量装置。 光采集装置收集测量对象的发射光谱。 提取装置从由上述光收集装置收集的发射光谱中提取具有原子谱线波长的波束和不存在原子谱线的波长区域中的波长的波束。 光强度计算装置计算由上述提取装置提取的光束的光强度。 温度测量装置基于由上述光强度计算装置计算的光束的强度来计算上述测量对象的温度。
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公开(公告)号：EP0543326A2
公开(公告)日：1993-05-26
申请号：EP92119607.7
申请日：1992-11-17
发明人： Marui, Tomohiro , Arai, Kazuo
CPC分类号： G01J5/60 , G01J2005/0074
摘要： Radiated light with a specified wavelength from a material (21, P, 201) is detected and a first parameter corresponding to the emissivity ratio is obtained from the detection signal. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln ε a /ln ε b ) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the detection signal.
摘要翻译： 从材料（21，P，201）检测出具有指定波长的辐射光，并从检测信号获得与发射率相对应的第一参数。 由于发射率根据材料表面的状况而具有不同的值，所以第一参数根据材料的表面状况而变化。 指示材料表面的状态的物理值与第一参数之间存在相关性。 即使使用与物理值对应的第二参数代替物理值本身，例如反射率和吸收率等光学物理值，材料表面上形成的膜的厚度，表面粗糙度 ，以及合金化退火的程度）。 作为对应于物理值的参数的示例，存在对应于表面附近的温度的发射率（lnεa / lnεb）之间的对数比。 因此，可以基于相关性获得第二参数并且可以获得物理值。 当使用发射率或对数发射率作为第二参数时，材料表面附近的温度可以从第二参数和检测信号获得。
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3.发明公开
公开(公告)号：EP0476611A3
公开(公告)日：1992-09-30
申请号：EP91115833.5
申请日：1991-09-18
发明人： Miki, Atsushi, c/o Yokohama Works of Sumitomo , Nishiguchi, Masanori, c/o Yokohama Works of Sumit.
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048 , G01J2005/0074 , G01J2005/0077
摘要： A method for measuring temperature based on infrared light which measures the temperature of a semiconductor element, the surface layer of which is formed with two kinds of materials having different emissivities and optical reflectances, based on the amount of infrared emission incident on an image taking means according to the invention, comprises the steps of taking an image by diffusing and letting the incident be the reflected light of a beam of light incident on the surface of the above semiconductor element on the light receiving face of the image taking means, followed by determining the area ratio at which each of the above two kinds of materials occupies the surface of the above semiconductor element by comparing the average brightness value of the above image with the brightness value of an image for the case that each of the above two kinds of materials independently forms the surface layer of the above semiconductor element, and obtaining the weighted average of the emissivities of the above two kinds of materials with the area ratio at which each of the above two kinds of materials occupies the surface of the above semiconductor element, followed by calculating the temperature of the above semiconductor element based on the weighted average and the actual amount of infrared emission.
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公开(公告)号：EP2762846A3
公开(公告)日：2018-03-28
申请号：EP14153517.9
申请日：2014-01-31
发明人： Uchii, Toshiyuki , Mori, Tadashi
CPC分类号： G01J5/0014 , G01J5/06 , G01J5/0821 , G01J5/0896 , G01J5/602 , G01J2005/0051 , G01J2005/0074 , G01K11/12
摘要： In an embodiment, a temperature measurement device is provided with: light collection means; extraction means; optical intensity calculation means; and temperature measurement means. The light collection means collects the emission spectrum of a measurement subject. The extraction means extracts beams having the wavelength of the atomic spectral lines and a beam having a wavelength in a wavelength region where there are no atomic spectral lines, from the emission spectrum collected by the aforementioned light collection means. The optical intensity calculation means calculates the optical intensities of the beams extracted by the aforementioned extraction means. The temperature measurement means calculates the temperature of the aforementioned measurement subject, based on the intensities of the beams calculated by the aforementioned optical intensity calculation means.
摘要翻译： 在一个实施例中，温度测量装置设置有：光收集装置; 提取手段; 光强度计算装置; 和温度测量装置。 光收集装置收集测量对象的发射光谱。 提取装置从由上述光收集装置收集的发射光谱中提取具有原子光谱线波长的光束和具有不存在原子光谱线的波长区域中的波长的光束。 光强度计算装置计算由上述提取装置提取的光束的光强度。 温度测量装置基于由上述光强度计算装置计算的光束的强度来计算上述测量对象的温度。
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5.发明公开Method and apparatus for evaluating the condition of the pavement of a traffic lane 审中-公开评估车道路面状况的方法和设备
公开(公告)号：EP2327976A3
公开(公告)日：2017-10-18
申请号：EP10190420.9
申请日：2010-11-09
发明人： Saarenketo, Timo
IPC分类号： B60W40/06 , E01C23/01 , G01J5/48 , G01N25/72 , G01C11/00 , G01J5/00 , G01J5/10 , G01N33/38 , G01N33/42 , G01S13/88 , G01S19/42
CPC分类号： B60W40/06 , B60W40/068 , B60W2420/40 , B60W2420/403 , B60W2420/42 , E01C23/01 , G01C11/00 , G01J5/007 , G01J2005/0074 , G01J2005/0077 , G01N25/72 , G01N33/383 , G01N33/42 , G01S13/885 , G01S19/42
摘要： The method is meant for the evaluating of the amount of micro and macro cracks in the pavement of a traffic lane, such as a road or street. The colder water beneath the pavement is under the load of heavy traffic pumped into the micro and macro cracks in the pavement and lowers the temperature of the pavement, so a large difference between the temperatures in different points on the pavement reveals a large amount of cracks. In the method, the examination span of the traffic lane is first selected. Thereafter the temperature T1 of the heavily loaded part of the pavement of the selected examination span and the temperature T2 of the lightly loaded part of the pavement of the same examination span are determined. A difference AT between the determined temperatures is calculated, which difference is compared to a reference value. If the difference is larger than the used reference value, the pavement lets through a significant amount of water. If the difference is smaller than the used reference value, the condition of the pavement is sufficiently good. The temperatures t r of the heavily loaded part of the pavement are measured at the wheel ruts and the temperatures t k of the lightly loaded part of the pavement are measured in the area outside the wheel ruts. The temperatures of the pavement are measured with an apparatus, which is placed in a vehicle travelling on the traffic lane. Alternatively the emissivity ε r of the heavily loaded part of the pavement and the emissivity ε k of the lightly loaded part of the pavement can be determined and the difference Δε can be compared to a reference value.
摘要翻译： 该方法用于评估诸如道路或街道的车道的路面上的微裂纹和宏裂纹的量。 路面下方的较冷的水在交通繁忙的负荷之下被泵入路面的微小裂缝和宏观裂缝中，并降低了路面的温度，因此路面上不同点之间的温差存在很大的裂缝 。 在该方法中，首先选择车道的检查范围。 此后，确定选定检查跨度的重载部分的温度T1和同一检查跨度的轻载部分的温度T2。 计算所确定的温度之间的差AT，将该差与参考值进行比较。 如果差值大于使用的参考值，路面会通过大量的水。 如果差值小于所使用的参考值，则路面状况足够好。 在车轮车辙处测量路面的重载部分的温度tr，并且在车辙外部的区域中测量路面的轻载部分的温度tk。 路面的温度用放置在车道上行驶的车辆上的设备测量。 或者，可以确定路面的重载部分的发射率εr和路面的轻载部分的发射率εk，并且可以将差值Δε与参考值进行比较。
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6.发明授权
公开(公告)号：EP0701686B1
公开(公告)日：1998-11-18
申请号：EP94906879.5
申请日：1994-02-16
发明人： BÖBEL, Friedrich , BAUER, Norbert
CPC分类号： G01J5/0003 , G01B11/0633 , G01J5/0007 , G01J5/0834 , G01J2001/4242 , G01J2005/0048 , G01J2005/0074
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公开(公告)号：EP0335224B1
公开(公告)日：1995-08-09
申请号：EP89104999.1
申请日：1989-03-21
发明人： Tanaka, Fumio , DeWitt, David P.
IPC分类号： G01J5/60
CPC分类号： G01J5/06 , G01J5/004 , G01J5/0044 , G01J5/02 , G01J5/026 , G01J5/0275 , G01J5/029 , G01J5/061 , G01J5/08 , G01J5/0825 , G01J5/0834 , G01J5/0846 , G01J5/602 , G01J2005/0051 , G01J2005/0074
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公开(公告)号：EP0543326A3
公开(公告)日：1993-11-24
申请号：EP92119607.7
申请日：1992-11-17
发明人： Marui, Tomohiro , Arai, Kazuo
CPC分类号： G01J5/60 , G01J2005/0074
摘要： Radiated light with a specified wavelength from a material (21, P, 201) is detected and a first parameter corresponding to the emissivity ratio is obtained from the detection signal. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln ε a /ln ε b ) corresponding to the temperature in the vicinity of the surface. Therefore, a second parameter can be obtained on the basis of the correlation and a physical value can be obtained. When the emissivity or logarithmic emissivity ratio is used as the second parameter, the temperature in the vicinity of the material surface can be obtained from the second parameter and the detection signal.
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公开(公告)号：EP2505976B1
公开(公告)日：2013-11-13
申请号：EP12162129.6
申请日：2012-03-29
发明人： Herve, Philippe , Rambure, Nicolas
CPC分类号： G01J5/08 , G01J5/0825 , G01J5/58 , G01J2005/0074
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10.发明公开
公开(公告)号：EP0701686A1
公开(公告)日：1996-03-20
申请号：EP94906879.0
申请日：1994-02-16
发明人： BÖBEL, Friedrich , BAUER, Norbert
CPC分类号： G01J5/0003 , G01B11/0633 , G01J5/0007 , G01J5/0834 , G01J2001/4242 , G01J2005/0048 , G01J2005/0074
摘要： The invention describes a process and device for measuring temperature and layer thickness during coating by prior art methods in semiconductor manufacturing, plasma, ion and other dry-etching plants and in the production of optical coatings. The current results of layer thickness and temperature measurements may be used in process control. The interference phenomena in thermal substrate radiation on the growing layer continuously cause the emissivity ε to change during coating, thus preventing the use of pyrometric temperature measurement, which gives rise to particular problems in multi-layer systems in which the current emissivity depends on the thickness of all the layer, their optical constants, the temperature-dependence of the optical constant and the observation angle and wavelength. The present invention solves these fundamental problems by determining the reflectivity R of the wafer using a reflectometer. According to the law of the conservation of energy, for non-transparent substrates ε = 1 - R, and hence the current emissivity of the entire (multi-layer) system can be directly determined with the reflectometer. The temperature is measured by means of a given evaluation rule, while the thickness is found by comparing the reflectometer curve with the theoretical layer thickness dependence.
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