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    AN IMAGING SYSTEM IN REFLECTION MODE USING COHERENT DIFFRACTION IMAGING METHODS AND USING MICRO-PINHOLE AND APERTURE SYSTEM
    4.
    发明公开
    AN IMAGING SYSTEM IN REFLECTION MODE USING COHERENT DIFFRACTION IMAGING METHODS AND USING MICRO-PINHOLE AND APERTURE SYSTEM 审中-公开
    BILDGEBUNGSSYSTEM IM REFLEXIONSMODUS MITTELSKOHÄRENTERDIFFRAKTIONSBILDGEBUNGSVERFAHREN UND VERWENDUNG EINES MIKRO-LOCHBLENDEN- UND BLENDENSYSTEMS

    公开(公告)号：EP3108299A1

    公开(公告)日：2016-12-28

    申请号：EP15703017.2

    申请日：2015-01-27

    申请人： Paul Scherrer Institut

    发明人： EKINCI, Yasin ,  LEE, Sangsul

    IPC分类号： G03F1/00 ,  G03F1/84 ,  G03F7/20

    CPC分类号： G03F7/70641 ,  G03F1/24 ,  G03F1/84 ,  G03F7/702 ,  G03F7/7065 ,  G03F7/70666

    摘要： A reflective sample, such as a mask, is imaged in an optics system. A radiation source emits a light beam with relatively low coherence. A first focusing element focuses the beam before a mirror reflects the focused beam towards the sample at an incidence angle of between 2 and 25° A pinhole aperture plate upstream of the sample has a first aperture to focus and cut-off the beam diameter to form a more monochromatic beam. The sample is displaced by a mechanism in a direction perpendicular to the normal vector of the sample surface while it reflects the light beam. The reflected beam passes a second aperture in the pinhole aperture plate next to the first aperture on its way to a pixel detector. The second aperture limits the diameter of the reflected beam, thereby adjusting the diameter of the light beam before it reaches the pixel detector.

    摘要翻译： 诸如掩模的反射样品在光学系统中被成像。 辐射源发射具有相对较低相干性的光束。 第一聚焦元件在镜子之前将光束聚焦在聚焦光束朝着样品以2到25°的入射角反射之前。样品上游的针孔孔板具有第一孔径以聚焦并切断光束直径以形成 一个更单色的光束。 样品在垂直于样品表面的法向量的方向上被机构移位，同时它反射光束。 反射光束在通向像素检测器的途中通过针孔孔板中邻近第一孔的第二孔。 第二孔径限制了反射光束的直径，从而在光束到达像素检测器之前调节光束的直径。

    EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
    5.
    发明授权
    EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD 有权
    曝光装置，曝光方法以及一种用于生产设备

    公开(公告)号：EP2003679B1

    公开(公告)日：2016-11-16

    申请号：EP07714729.6

    申请日：2007-02-21

    申请人： Nikon Corporation

    发明人： SHIBAZAKI, Yuichi

    IPC分类号： H01L21/027 ,  G03F9/02 ,  H01L21/677

    CPC分类号： G03F7/70725 ,  G03F7/70341 ,  G03F7/70641 ,  G03F7/70666 ,  G03F9/7003 ,  G03F9/7026 ,  G03F9/7088 ,  G03F2009/005 ,  Y10T29/49826

    摘要： While a wafer stage (WST) linearly moves in a Y-axis direction, a multipoint AF system (90a, 90b) detects surface position information of the surface of a wafer (W) at a plurality of detection points that are set at a predetermined distance in an X-axis direction and also a plurality of alignment systems (AL1, AL2 1 to AL2 4 ) that are arrayed in a line along the X-axis direction detect each of marks at positions different from one another on the wafer (W). That is, detection of surface position information of the wafer surface at a plurality of detection points and detection of the marks at positions different from one another on the wafer are finished, only by the wafer stage (wafer) linearly passing through the array of the plurality of detection points of the multipoint AF system and the plurality of alignment systems, and therefore, the throughput can be improved, compared with the case where a detection operation of the marks and a detection operation of the surface position information (focus information) are independently performed.

    METHODS AND APPARATUS FOR DETERMINING FOCUS
    6.
    发明公开
    METHODS AND APPARATUS FOR DETERMINING FOCUS 审中-公开
    VERFAHREN UND VORRICHTUNG ZUR FOKUSBESTIMMUNG

    公开(公告)号：EP3033764A1

    公开(公告)日：2016-06-22

    申请号：EP14836059.7

    申请日：2014-08-08

    申请人： KLA - Tencor Corporation

    发明人： PANDEV, Stillian Ivanov

    IPC分类号： H01L21/027

    CPC分类号： G03F9/7026 ,  G03F7/70641

    摘要： Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A symmetric curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the symmetric curve is determined and reported as an optimal focus for use in the photolithography system.

    摘要翻译： 公开了用于确定光刻系统的最佳焦点的装置和方法。 从位于半导体晶片上的多个场中的特定目标获取多个光信号，并且使用包括不同聚焦值的不同工艺参数形成场。 从与焦点变化相关的光信号中提取特征。 将对称曲线拟合为所提取的光信号特征作为焦点的函数。 确定对称曲线中的极值点并将其报告为用于光刻系统的最佳焦点。

    STATISTICAL MODEL-BASED METROLOGY
    7.
    发明公开
    STATISTICAL MODEL-BASED METROLOGY 审中-公开
    基于测量的统计模型

    公开(公告)号：EP2979297A1

    公开(公告)日：2016-02-03

    申请号：EP14773831.4

    申请日：2014-03-25

    申请人： Kla-Tencor Corporation

    发明人： PANDEV, Stilian ,  MADSEN, Jonathan

    IPC分类号： H01L21/66 ,  H01L21/00

    CPC分类号： G03F7/70558 ,  G03F7/70641 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

    Detection device, exposure apparatus and device manufacturing method using such an exposure apparatus
    8.
    发明公开
    Detection device, exposure apparatus and device manufacturing method using such an exposure apparatus 审中-公开
    检测装置，曝光装置和方法，用于使用该方法的装置

    公开(公告)号：EP2722714A3

    公开(公告)日：2015-06-17

    申请号：EP13004976.0

    申请日：2013-10-17

    申请人： Canon Kabushiki Kaisha

    发明人： Maeda, Hironori

    IPC分类号： G03F9/00 ,  G01B11/02

    CPC分类号： G03F7/70641 ,  G01B11/06 ,  G03F9/7026 ,  G03F9/7084 ,  G03F9/7088

    摘要： A detection device that detects a mark provided on the back side of an object (3), the detection device includes a first detection unit (16) configured to detect the mark from a surface side of the object (3); a second detection unit (41) configured to detect a surface position of the object (3); and a processing unit (P). The processing unit (P) determines a thickness of the object (3) based on a difference between a first focus position acquired with reference to the position of the mark detected by the first detection unit (16) and a second focus position acquired with reference to the surface position detected by the second detection unit (41).